EL5211IYE-T13 [INTERSIL]
60MHz Rail-to-Rail Input-Output Op Amps; 60MHz的轨至轨输入输出运算放大器
| 型号： | EL5211IYE-T13 |
| 厂家： | 
Intersil |
| 描述： | 60MHz Rail-to-Rail Input-Output Op Amps |
| 文件： | 总12页 (文件大小：593K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EL5111, EL5211, EL5411
®
Data Sheet
October 29, 2004
FN7119.4
60MHz Rail-to-Rail Input-Output Op Amps
Features
• Pb-Free Available (RoHS Compliant)
The EL5111, EL5211, and EL5411 are low power, high
voltage rail-to-rail input-output amplifiers. The EL5111
represents a single amplifier, the EL5211 contains two
amplifiers, and the EL5411 contains four amplifiers.
Operating on supplies ranging from 5V to 15V, while
consuming only 2.5mA per amplifier, the EL5111, EL5211,
and EL5411 have a bandwidth of 60MHz (-3dB). They also
provide common mode input ability beyond the supply rails,
as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply
voltage.
• 60MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier) = 2.5mA
• High slew rate = 75V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
• ±180mA output short current
The EL5111, EL5211, and EL5411 also feature fast slewing
and settling times, as well as a high output drive capability of
65mA (sink and source). These features make these
amplifiers ideal for high speed filtering and signal
conditioning application. Other applications include battery
power, portable devices, and anywhere low power
consumption is important.
Applications
• TFT-LCD panels
• V
COM
amplifiers
• Drivers for A-to-D converters
• Data acquisition
The EL5111 is available in 5-pin TSOT and 8-pin HMSOP
packages. The EL5211 is available in the 8-pin HMSOP
package. The EL5411 is available in space-saving 14-pin
HTSSOP packages. All feature a standard operational
amplifier pinout. These amplifiers operate over a temperature
range of -40°C to +85°C.
• Video processing
• Audio processing
• Active filters
• Test equipment
• Battery-powered applications
• Portable equipment
Pinouts
EL5111
(8-PIN HMSOP)
TOP VIEW
EL5111
EL5211
(8-PIN HMSOP)
TOP VIEW
EL5411
(5-PIN TSOT)
TOP VIEW
(14-PIN HTSSOP)
TOP VIEW
NC
VIN-
VIN+
VS-
1
2
3
4
8
7
6
5
NC
VOUT 1
5
4
VS+
VIN-
VOUTA
VINA-
VINA+
VS-
1
2
3
4
8
7
6
5
VS+
VOUTA 1
14 VOUTD
VS+
VOUT
NC
VS-
2
3
-
+
VOUTB
VINB-
VINB+
VINA-
VINA+
VS+
2
3
4
5
6
7
13 VIND-
12 VIND+
11 VS-
-
+
+
-
-
-
VIN+
-
+
+
+
VINB+
VINB-
VOUTB
10 VINC+
+
-
+
-
9
8
VINC-
VOUTC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
1
Copyright © Intersil Americas Inc. 2004. All Rights Reserved. All other trademarks mentioned are the property of their respective owners.
EL5111, EL5211, EL5411
Ordering Information
TAPE &
REEL
PART NUMBER
EL5111IWT-T7
EL5111IWT-T7A
PACKAGE
5-Pin TSOT
5-Pin TSOT
PKG. DWG. #
MDP0049
MDP0049
MDP0049
7” (3K pcs)
7” (250 pcs)
7” (3K pcs)
EL5111IWTZ-T7
(Note)
5-Pin TSOT
(Pb-Free)
EL5111IWTZ-T7A
(Note)
5-Pin TSOT
(Pb-Free)
7” (250 pcs)
MDP0049
EL5111IYE
8-Pin HMSOP
8-Pin HMSOP
8-Pin HMSOP
-
7”
13”
-
MDP0050
MDP0050
MDP0050
MDP0050
EL5111IYE-T7
EL5111IYE-T13
EL5111IYEZ
(See Note)
8-Pin HMSOP
(Pb-free)
EL5111IYEZ-T7
(See Note)
8-Pin HMSOP
(Pb-free)
7”
MDP0050
MDP0050
EL5111IYEZ-T13
(See Note)
8-Pin HMSOP
(Pb-free)
13”
EL5211IYE
8-Pin HMSOP
8-Pin HMSOP
8-Pin HMSOP
-
7”
13”
-
MDP0050
MDP0050
MDP0050
MDP0050
EL5211IYE-T7
EL5211IYE-T13
EL5211IYEZ
(Note)
8-Pin HMSOP
(Pb-Free)
EL5211IYEZ-T7
(Note)
8-Pin HMSOP
(Pb-Free)
7”
13”
-
MDP0050
MDP0050
MDP0048
MDP0048
MDP0048
MDP0048
EL5211IYEZ-T13
(Note)
8-Pin HMSOP
(Pb-Free)
EL5411IRE
14-Pin
HTSSOP
EL5411IRE-T7
EL5411IRE-T13
14-Pin
HTSSOP
7”
13”
-
14-Pin
HTSSOP
EL5411IREZ
(Note)
14-Pin
HTSSOP
(Pb-Free)
EL5411IREZ-T7
(Note)
14-Pin
7”
MDP0048
MDP0048
HTSSOP
(Pb-Free)
EL5411IREZ-T13
(Note)
14-Pin
HTSSOP
(Pb-Free)
13”
NOTE: Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with
both SnPb and Pb-free soldering operations. Intersil Pb-free products
are MSL classified at Pb-free peak reflow temperatures that meet or
exceed the Pb-free requirements of IPC/JEDEC J STD-020C.
FN7119.4
2
EL5111, EL5211, EL5411
Absolute Maximum Ratings (T = 25°C)
A
Supply Voltage between V + and V -. . . . . . . . . . . . . . . . . . . .+18V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
S
S
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V - - 0.5V, V +0.5V
S
S
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T = T = T
A
J
C
Electrical Specifications V + = +5V, V - = -5V, R = 1kΩ to 0V, T = 25°C, Unless Otherwise Specified
S
S
L
A
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
15
UNIT
INPUT CHARACTERISTICS
V
Input Offset Voltage
V
V
= 0V
= 0V
3
7
2
1
2
mV
µV/°C
nA
OS
TCV
CM
CM
Average Offset Voltage Drift (Note 1)
Input Bias Current
OS
I
60
B
R
Input Impedance
GΩ
pF
IN
IN
C
Input Capacitance
CMIR
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-5.5
50
+5.5
V
CMRR
for V from -5.5V to 5.5V
IN
70
70
dB
A
-4.5V ≤ V
≤ 4.5V
OUT
62
dB
VOL
OUTPUT CHARACTERISTICS
V
V
Output Swing Low
Output Swing High
Short-Circuit Current
Output Current
I = -5mA
-4.92
4.92
±180
±65
-4.85
V
V
OL
L
I = 5mA
4.85
60
OH
L
I
I
mA
mA
SC
OUT
POWER SUPPLY PERFORMANCE
PSRR Power Supply Rejection Ratio
Supply Current
V
is moved from ±2.25V to ±7.75V
80
2.5
5
dB
mA
mA
mA
S
I
No load (EL5111)
No load (EL5211)
No load (EL5411)
4.5
7.5
15
S
10
DYNAMIC PERFORMANCE
SR Slew Rate (Note 2)
-4.0V ≤ V
≤ 4.0V, 20% to 80%
75
80
V/µs
ns
OUT
(A = +1), V = 2V step
t
Settling to +0.1% (A = +1)
V
S
V
O
BW
-3dB Bandwidth
60
MHz
MHz
°
GBWP
PM
Gain-Bandwidth Product
Phase Margin
32
50
CS
Channel Separation
Differential Gain (Note 3)
Differential Phase (Note 3)
f = 5MHz (EL5211 & EL5411 only)
110
0.17
0.24
dB
%
d
d
R
R
= R = 1kΩ and V
= 1.4V
= 1.4V
G
P
F
G
OUT
= R = 1kΩ and V
°
F
G
OUT
NOTES:
1. Measured over operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. NTSC signal generator used.
FN7119.4
3
Electrical Specifications V + = +5V, V - = 0V, R = 1kΩ to 2.5V, T = 25°C, Unless Otherwise Specified
S
S
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
15
UNIT
INPUT CHARACTERISTICS
V
Input Offset Voltage
V
V
= 2.5V
= 2.5V
3
7
2
1
2
mV
µV/°C
nA
OS
TCV
CM
CM
Average Offset Voltage Drift (Note 4)
Input Bias Current
OS
I
60
B
R
Input Impedance
GΩ
pF
IN
IN
C
Input Capacitance
CMIR
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
45
+5.5
150
V
CMRR
for V from -0.5V to 5.5V
IN
66
70
dB
A
0.5V ≤ V
≤ 4.5V
OUT
62
dB
VOL
OUTPUT CHARACTERISTICS
V
V
Output Swing Low
Output Swing High
Short-circuit Current
Output Current
I = -5mA
80
mV
V
OL
L
I = 5mA
4.85
60
4.92
±180
±65
OH
L
I
I
mA
mA
SC
OUT
POWER SUPPLY PERFORMANCE
PSRR Power Supply Rejection Ratio
Supply Current
V
is moved from 4.5V to 15.5V
80
2.5
5
dB
mA
mA
mA
S
I
No load (EL5111)
No load (EL5211)
No load (EL5411)
4.5
7.5
15
S
10
DYNAMIC PERFORMANCE
SR Slew Rate (Note 5)
1V ≤ V
≤ 4V, 20% to 80%
75
80
V/µs
ns
OUT
(A = +1), V = 2V step
t
Settling to +0.1% (A = +1)
V
S
V
O
BW
-3dB Bandwidth
60
MHz
MHz
°
GBWP
PM
Gain-Bandwidth Product
Phase Margin
32
50
CS
Channel Separation
Differential Gain (Note 6)
Differential Phase (Note 6)
f = 5MHz (EL5211 & EL5411 only)
110
0.17
0.24
dB
%
d
d
R
R
= R = 1kΩ and V
= 1.4V
= 1.4V
G
P
F
F
G
OUT
= R = 1kΩ and V
°
G
OUT
NOTES:
4. Measured over operating temperature range.
5. Slew rate is measured on rising and falling edges.
6. NTSC signal generator used.
Electrical Specifications V + = +15V, V - = 0V, R = 1kΩ to 7.5V, T = 25°C, Unless Otherwise Specified
S
S
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
15
UNIT
INPUT CHARACTERISTICS
V
Input Offset Voltage
V
= 7.5V
= 7.5V
3
7
2
1
mV
µV/°C
nA
OS
TCV
CM
CM
Average Offset Voltage Drift (Note 7)
Input Bias Current
OS
I
V
60
B
R
Input Impedance
GΩ
IN
FN7119.4
4
Electrical Specifications V + = +15V, V - = 0V, R = 1kΩ to 7.5V, T = 25°C, Unless Otherwise Specified (Continued)
S
S
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
pF
C
Input Capacitance
2
IN
CMIR
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
53
+15.5
V
CMRR
for V from -0.5V to 15.5V
IN
72
70
dB
dB
A
0.5V ≤ V
≤ 14.5V
OUT
62
VOL
OUTPUT CHARACTERISTICS
V
V
Output Swing Low
Output Swing High
Short-circuit Current
Output Current
I = -5mA
80
150
mV
V
OL
L
I = 5mA
14.85
60
14.92
±180
±65
OH
L
I
I
mA
mA
SC
OUT
POWER SUPPLY PERFORMANCE
PSRR Power Supply Rejection Ratio
Supply Current
V
is moved from 4.5V to 15.5V
80
2.5
5
dB
mA
mA
mA
S
I
No load (EL5111)
No load (EL5211)
No load (EL5411)
4.5
7.5
15
S
10
DYNAMIC PERFORMANCE
SR Slew Rate (Note 8)
1V ≤ V
≤ 14V, 20% to 80%
75
80
V/µs
ns
OUT
(A = +1), V = 2V step
t
Settling to +0.1% (A = +1)
V
S
V
O
BW
-3dB Bandwidth
60
MHz
MHz
°
GBWP
PM
Gain-Bandwidth Product
Phase Margin
32
50
CS
Channel Separation
Differential Gain (Note 9)
Differential Phase (Note 9)
f = 5MHz (EL5211 & EL5411 only)
110
0.16
0.22
dB
%
d
d
R
R
= R = 1kΩ and V
= 1.4V
= 1.4V
G
P
F
F
G
OUT
= R = 1kΩ and V
°
G
OUT
NOTES:
7. Measured over operating temperature range
8. Slew rate is measured on rising and falling edges
9. NTSC signal generator used
FN7119.4
5
Typical Performance Curves
500
25
20
15
10
5
V =±5V
TYPICAL
V =±5V
TYPICAL
S
S
T =25°C
PRODUCTION
DISTRIBUTION
PRODUCTION
DISTRIBUTION
A
400
300
200
100
0
0
INPUT OFFSET VOLTAGE (mV)
INPUT OFFSET VOLTAGE DRIFT, TCV
(µV/°C)
OS
FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION
FIGURE 2. INPUT OFFSET VOLTAGE DRIFT
2
1.5
1
0.008
V =±5V
S
0.004
0
0.5
0
-0.004
-0.008
-0.012
-0.5
-50
-10
30
70
110
150
-50
-10
30
70
110
150
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE
4.96
FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE
-4.85
V =±5V
V =±5V
S
S
I
=5mA
OUT
I
=5mA
OUT
-4.87
-4.89
-4.91
-4.93
-4.95
4.94
4.92
4.90
4.88
4.86
-50
-10
30
70
110
150
-50
-10
30
70
110
150
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE
FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE
FN7119.4
6
Typical Performance Curves (Continued)
75
78
77
76
75
74
73
72
V =±5V
V =±5V
S
S
R =1kΩ
L
70
65
60
-50
-10
30
70
110
150
-50
-10
30
70
110
150
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE
2.9
FIGURE 8. SLEW RATE vs TEMPERATURE
2.7
T =25°C
V =±5V
S
A
2.7
2.5
2.3
2.1
1.9
1.7
1.5
2.65
2.6
2.55
2.5
2.45
2.4
4
8
12
16
20
-50
-10
30
70
110
150
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
FIGURE 9. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY
VOLTAGE
FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs
TEMPERATURE
0
-0.02
-0.04
-0.06
-0.08
-0.1
0.3
0.25
0.2
0.15
0.1
-0.12
-0.14 V =±5V
S
0.05
0
A =2
V
-0.16
-0.18
R =1kΩ
L
0
100
IRE
200
0
100
IRE
200
FIGURE 11. DIFFERENTIAL GAIN
FIGURE 12. DIFFERENTIAL PHASE
FN7119.4
7
Typical Performance Curves (Continued)
-30
80
60
40
20
0
250
190
130
70
V =±5V
S
A =2
-40
-50
-60
-70
-80
-90
V
R =1kΩ
L
GAIN
FREQ=1MHz
2nd HD
PHASE
10
3rd HD
4
-20
-50
0
2
6
8
10
1K
10K
100K
1M
10M
100M
V
(V)
FREQUENCY (Hz)
OP-P
FIGURE 13. HARMONIC DISTORTION vs V
FIGURE 14. OPEN LOOP GAIN AND PHASE
25
OP-P
5
V =±5V
S
100pF
A =1
V
1000pF
15
C
=0pF
3
1
LOAD
1kΩ
47pF
10pF
5
-5
-1
-3
-5
560Ω
150Ω
V =±5V
S
-15
-25
A =1
V
R =1kΩ
L
100K
1M
10M
100M
100K
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS R
FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS C
L
L
400
350
300
250
200
150
100
50
12
10
8
6
4
V =±5V
S
A =1
V
2
R =1kΩ
L
DISTORTION <1%
0
0
10K
100K
1M
10M
100M
10K
100K
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (kHz)
FIGURE 17. CLOSED LOOP OUTPUT IMPEDANCE
FIGURE 18. MAXIMUM OUTPUT SWING vs FREQUENCY
FN7119.4
8
Typical Performance Curves (Continued)
-15
-25
-35
-45
-55
-65
-80
-60
-40
-20
0
PSRR+
PSRR-
V =±5V
S
T =25°C
A
1K
10K
100K
1M
10M
100M
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 19. CMRR
FIGURE 20. PSRR
-60
-80
1K
DUAL MEASURED CH A TO B
QUAD MEASURED CH A TO D OR B TO C
OTHER COMBINATIONS YIELD
IMPROVED REJECTION
100
10
1
-100
-120
-140
-160
V =±5V
S
R =1kΩ
L
A =1
V
IN
V
=110mV
RMS
100
1K
10K
100K
1M
10M
100M
1K
10K
100K
FREQUENCY (Hz)
1M
10M
30M
FREQUENCY (Hz)
FIGURE 21. INPUT VOLTAGE NOISE SPECTRAL DENSITY
100
FIGURE 22. CHANNEL SEPARATION
5
4
3
2
1
V =±5V
S
V =±5V
S
A =1
V
A =1
V
R =1kΩ
R =1kΩ
L
80
60
40
20
0
L
0.1%
V
=±50mV
IN
T =25°C
A
0
-1
-2
-3
-4
-5
0.1%
10
100
1K
55
65
75
85
95
105
LOAD CAPACITANCE (pF)
SETTLING TIME (ns)
FIGURE 23. SMALL-SIGNAL OVERSHOOT vs LOAD
CAPACITANCE
FIGURE 24. SETTLING TIME vs STEP SIZE
FN7119.4
9
Typical Performance Curves (Continued)
V =±5V
S
V =±5V
S
T =25°C
A
T =25°C
A
A =1
V
A =1
V
R =1kΩ
R =1kΩ
L
L
100mV STEP
1V STEP
50ns/DIV
50ns/DIV
FIGURE 25. LARGE SIGNAL TRANSIENT RESPONSE
FIGURE 26. SMALL SIGNAL TRANSIENT RESPONSE
Pin Descriptions
EL5111
EL5111
EL5211
EL5411
(TSOT-5)
(HMSOP8) (HMSOP8) ( HTSSOP14)
NAME
FUNCTION
EQUIVALENT CIRCUIT
1
6
1
1
VOUTA Amplifier A output
V
S+
V
S-
GND
CIRCUIT 1
4
2
2
2
VINA-
Amplifier A inverting input
V
V
S+
S-
CIRCUIT 2
(Reference Circuit 2)
3
5
3
7
3
8
5
6
7
3
4
VINA+
VS+
Amplifier A non-inverting input
Positive power supply
5
VINB+
VINB-
Amplifier B non-inverting input
Amplifier B inverting input
(Reference Circuit 2)
(Reference Circuit 2)
(Reference Circuit 1)
(Reference Circuit 1)
(Reference Circuit 2)
(Reference Circuit 2)
6
7
VOUTB Amplifier B output
VOUTC Amplifier C output
8
9
VINC-
VINC+
VS-
Amplifier C inverting input
10
11
12
13
14
Amplifier C non-inverting input
Negative power supply
2
4
4
VIND+
VIND-
Amplifier D non-inverting input
Amplifier D inverting input
(Reference Circuit 2)
(Reference Circuit 2)
(Reference Circuit 1)
VOUTD Amplifier D output
NC Not connected
1, 5, 8
FN7119.4
10
indefinitely, the power dissipation could easily increase such
that the device may be damaged. Maximum reliability is
maintained if the output continuous current never exceeds
±65mA. This limit is set by the design of the internal metal
interconnects.
Applications Information
Product Description
The EL5111, EL5211, and EL5411 voltage feedback
amplifiers are fabricated using a high voltage CMOS
process. They exhibit rail-to-rail input and output capability,
are unity gain stable and have low power consumption
(2.5mA per amplifier). These features make the EL5111,
EL5211, and EL5411 ideal for a wide range of general-
purpose applications. Connected in voltage follower mode
and driving a load of 1kΩ, the EL5111, EL5211, and EL5411
have a -3dB bandwidth of 60MHz while maintaining a 75V/µs
slew rate. The EL5111 is a single amplifier, the EL5211 a
dual amplifier, and the EL5411 a quad amplifier.
Output Phase Reversal
The EL5111, EL5211, and EL5411 are immune to phase
reversal as long as the input voltage is limited from V - -0.5V
S
to V + +0.5V. Figure 28 shows a photo of the output of the
S
device with the input voltage driven beyond the supply rails.
Although the device's output will not change phase, the
input's overvoltage should be avoided. If an input voltage
exceeds supply voltage by more than 0.6V, electrostatic
protection diodes placed in the input stage of the device
begin to conduct and overvoltage damage could occur.
Operating Voltage, Input, and Output
The EL5111, EL5211, and EL5411 are specified with a single
nominal supply voltage from 5V to 15V or a split supply with
its total range from 5V to 15V. Correct operation is
guaranteed for a supply range of 4.5V to 16.5V. Most
EL5111, EL5211, and EL5411 specifications are stable over
both the full supply range and operating temperatures of
-40°C to +85°C. Parameter variations with operating voltage
and/or temperature are shown in the typical performance
curves.
V
= ±2.5V, T = 25°C, A = 1, V = 6V
IN P-P
S
A
V
1V
10µs
The input common-mode voltage range of the EL5111,
EL5211, and EL5411 extends 500mV beyond the supply
rails. The output swings of the EL5111, EL5211, and EL5411
typically extend to within 100mV of positive and negative
supply rails with load currents of 5mA. Decreasing load
currents will extend the output voltage range even closer to
the supply rails. Figure 27 shows the input and output
waveforms for the device in the unity-gain configuration.
Operation is from ±5V supply with a 1kΩ load connected to
1V
FIGURE 28. OPERATION WITH BEYOND-THE-RAILS INPUT
Power Dissipation
With the high-output drive capability of the EL5111, EL5211,
and EL5411 amplifiers, it is possible to exceed the 125°C
'absolute-maximum junction temperature' under certain load
current conditions. Therefore, it is important to calculate the
maximum junction temperature for the application to
determine if load conditions need to be modified for the
amplifier to remain in the safe operating area.
GND. The input is a 10V
sinusoid. The output voltage is
P-P
approximately 9.8V
.
P-P
V
= ±5V, T = 25°C, A = 1, V = 10V
IN P-P
S
A
V
5V
10µs
The maximum power dissipation allowed in a package is
determined according to:
T
– T
AMAX
JMAX
P
= --------------------------------------------
DMAX
Θ
JA
where:
5V
• T
• T
= Maximum junction temperature
= Maximum ambient temperature
JMAX
AMAX
FIGURE 27. OPERATION WITH RAIL-TO-RAIL INPUT AND
OUTPUT
• Θ = Thermal resistance of the package
JA
• P
DMAX
= Maximum power dissipation in the package
Short Circuit Current Limit
The EL5111, EL5211, and EL5411 will limit the short circuit
current to ±180mA if the output is directly shorted to the
positive or the negative supply. If an output is shorted
FN7119.4
11
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD -
HTSSOP EXPOSED DIEPAD SOLDERED TO
PCB PER JESD51-5
3.5
3
P
= Σi[V × I
+ (V + – V
i) × I
i]
LOAD
DMAX
S
SMAX
S
OUT
2.632W
when sourcing, and:
2.5
2
HTSSOP14
JA
θ
=38°C/W
P
= Σi[V × I
+ (V
i – V -) × I
i]
LOAD
DMAX
S
SMAX
OUT
S
1.5
1
when sinking,
where:
0.5
0
• i = 1 to 2 for dual and 1 to 4 for quad
• V = Total supply voltage
0
25
50
75 85 100
125
S
AMBIENT TEMPERATURE (°C)
• I
SMAX
= Maximum supply current per amplifier
FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
• V
i = Maximum output voltage of the application
OUT
Unused Amplifiers
• I
i = Load current
LOAD
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
If we set the two P
equations equal to each other, we
i to avoid device overheat. Figures 29,
DMAX
can solve for R
LOAD
30, and 31 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
Power Supply Bypassing and Printed Circuit
Board Layout
simple matter to see if P
exceeds the device's power
DMAX
The EL5111, EL5211, and EL5411 can provide gain at high
frequency. As with any high-frequency device, good printed
circuit board layout is necessary for optimum performance.
Ground plane construction is highly recommended, lead
lengths should be as short as possible and the power supply
pins must be well bypassed to reduce the risk of oscillation.
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figures 29, 30 & 31.
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
For normal single supply operation, where the V - pin is
CONDUCTIVITY TEST BOARD
0.9
S
connected to ground, a 0.1µF ceramic capacitor should be
0.8
placed from V + to pin to V - pin. A 4.7µF tantalum
S
S
694mW
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
HTSSOP14
=144°C/W
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7µF capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
θ
JA
0
25
50
75 85 100
125
AMBIENT TEMPERATURE (°C)
FIGURE 29. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN7119.4
12
相关型号：
EL5211IYEZ-T7
60MHz Rail-to-Rail Input-Output Op Amps; MSOP8; Temp Range: -40° to 85°C
RENESAS
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