EL5421CYZ [INTERSIL]
Quad 12MHz Rail-to-Rail Input-Output Buffer; 四12MHz的轨至轨输入，输出缓冲器
| 型号： | EL5421CYZ |
| 厂家： | 
Intersil |
| 描述： | Quad 12MHz Rail-to-Rail Input-Output Buffer |
| 文件： | 总11页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EL5421
®
Data Sheet
June 14, 2004
FN7198.1
Quad 12MHz Rail-to-Rail Input-Output
Buffer
Features
• 12MHz -3dB bandwidth
The EL5421 is a quad, low power, high
voltage rail-to-rail input-output buffer.
• Unity gain buffer
• Supply voltage = 4.5V to 16.5V
• Low supply current (per buffer) = 500µA
• High slew rate = 10V/µs
• Rail-to-rail operation
Operating on supplies ranging from 5V
to 15V, while consuming only 500µA per channel, the
EL5421 has a bandwidth of 12MHz (-3dB). The EL5421 also
provides rail-to-rail input and output ability, giving the
maximum dynamic range at any supply voltage.
The EL5421 also features fast slewing and settling times, as
well as a high output drive capability of 30mA (sink and
source). These features make the EL5421 ideal for use as
voltage reference buffers in Thin Film Transistor Liquid
Crystal Displays (TFT-LCD). Other applications include
battery power, portable devices and anywhere low power
consumption is important.
• “Mini” SO package (MSOP)
• Pb-free package available
Applications
• TFT-LCD drive circuits
• Electronics notebooks
• Electronics games
The EL5421 is available in a space saving 10-pin MSOP
package and operates over a temperature range of -40°C to
+85°C.
• Personal communication devices
• Personal digital assistants (PDA)
• Portable instrumentation
• Wireless LANs
Pinout
EL 5421
(10-PIN MSOP)
TOP VIEW
• Office automation
• Active filters
VOUTA
VINA
1
2
3
4
5
10 VOUTD
• ADC/DAC buffers
9
8
7
6
VIND
VS-
VS+
Ordering Information
VINB
VINC
VOUTC
TAPE &
PART NUMBER
EL5421CY
PACKAGE
10-Pin MSOP
10-Pin MSOP
10-Pin MSOP
REEL
PKG. DWG. #
MDP0043
MDP0043
MDP0043
MDP0043
VOUTB
-
7”
13”
-
EL5421CY-T7
EL5421CY-T13
EL5421CYZ
(Note)
10-Pin MSOP
(Pb-Free)
EL5421CYZ-T7
(Note)
10-Pin MSOP
(Pb-Free)
7”
MDP0043
MDP0043
EL5421CYZ-T13
(Note)
10-Pin MSOP
(Pb-Free)
13”
NOTE: Intersil Pb-free products employ special Pb-free material
sets; molding compounds/die attach materials and 100% matte tin
plate termination finish, which is compatible with both SnPb and
Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J Std-020B.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
1
Copyright © Intersil Americas Inc. 2004. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL5421
Absolute Maximum Ratings (T = 25°C)
A
Supply Voltage between V + and V -. . . . . . . . . . . . . . . . . . . .+18V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
S
S
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V - -0.5V, V + +0.5V
S
S
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T = T = T
A
J
C
Electrical Specifications V + = +5V, V - = -5V, R = 10kΩ and C = 10pF to 0V, T = 25°C unless otherwise specified.
S
S
L
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
V
Input Offset Voltage
V
= 0V
2
5
12
mV
µV/°C
nA
OS
TCV
CM
(Note 1)
= 0V
Average Offset Voltage Drift
Input Bias Current
Input Impedance
OS
I
V
2
50
B
CM
R
1
GΩ
IN
IN
V
C
Input Capacitance
Voltage Gain
1.35
pF
A
-4.5V ≤ V
OUT
≤ 4.5V
0.995
1.005
-4.85
V/V
OUTPUT CHARACTERISTICS
V
V
Output Swing Low
Output Swing High
Short Circuit Current
I = -5mA
-4.92
4.92
V
V
OL
L
I = 5mA
4.85
±80
OH
L
I
Short to GND (Note 2)
±120
mA
SC
POWER SUPPLY PERFORMANCE
PSRR Power Supply Rejection Ratio
Supply Current (Per Buffer)
DYNAMIC PERFORMANCE
SR Slew Rate (Note 3)
V
is moved from ±2.25V to ±7.75V
60
7
80
dB
µA
S
I
No load
500
750
S
-4.0V ≤ V
≤ 4.0V, 20% to 80%
10
500
12
V/µs
ns
OUT
t
Settling to +0.1%
-3dB Bandwidth
V = 2V step
O
S
BW
R
= 10kΩ, C = 10pF
MHz
dB
L
L
CS
Channel Separation
f = 5MHz
75
NOTES:
1. Measured over the operating temperature range
2. Parameter is guaranteed (but not test) by design and characterization data
3. Slew rate is measured on rising and falling edges
2
EL5421
Electrical Specifications V + = +5V, V - = 0V, R = 10kΩ and C = 10pF to 2.5V, T = 25°C unless otherwise specified.
S
S
L
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
V
Input Offset Voltage
V
= 2.5V
2
5
10
mV
µV/°C
nA
OS
TCV
CM
(Note 1)
= 2.5V
Average Offset Voltage Drift
Input Bias Current
Input Impedance
OS
I
V
2
50
B
CM
R
1
GΩ
IN
IN
V
C
Input Capacitance
Voltage Gain
1.35
pF
A
0.5 ≤ V
OUT
≤ 4.5V
0.995
1.005
150
V/V
OUTPUT CHARACTERISTICS
V
V
Output Swing Low
Output Swing High
Short Circuit Current
I = -5mA
80
mV
V
OL
L
I = 5mA
4.85
±80
4.92
±120
OH
L
I
Short to GND (Note 2)
mA
SC
POWER SUPPLY PERFORMANCE
PSRR Power Supply Rejection Ratio
Supply Current (Per Buffer)
DYNAMIC PERFORMANCE
SR Slew Rate (Note 3)
V
is moved from 4.5V to 15.5V
60
7
80
dB
µA
S
I
No load
500
750
S
1V ≤ V
≤ 4V, 20% to 80%
10
500
12
V/µs
ns
OUT
V = 2V step
O
t
Settling to +0.1%
-3dB Bandwidth
S
BW
R
= 10kΩ, C = 10pF
MHz
dB
L
L
CS
Channel Separation
f = 5MHz
75
NOTES:
1. Measured over the operating temperature range
2. Parameter is guaranteed (but not test) by design and characterization data
3. Slew rate is measured on rising and falling edges
3
EL5421
Electrical Specifications V + = +15V, V - = 0V, R = 10kΩ and C = 10pF to 7.5V, T = 25°C unless otherwise specified.
S
S
L
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
V
Input Offset Voltage
V
= 7.5V
2
5
14
mV
µV/°C
nA
OS
TCV
CM
(Note 1)
= 7.5V
Average Offset Voltage Drift
Input Bias Current
Input Impedance
OS
I
V
2
50
B
CM
R
1
GΩ
IN
IN
V
C
Input Capacitance
Voltage Gain
1.35
pF
A
0.5 ≤ V
≤ 14.5V
0.995
1.005
150
V/V
OUT
OUTPUT CHARACTERISTICS
V
V
Output Swing Low
Output Swing High
Short Circuit Current
I = -5mA
80
mV
V
OL
L
I = 5mA
14.85
±80
14.92
±120
OH
L
I
Short to GND (Note 2)
mA
SC
POWER SUPPLY PERFORMANCE
PSRR Power Supply Rejection Ratio
Supply Current (Per Buffer)
DYNAMIC PERFORMANCE
SR Slew Rate (Note 3)
V
is moved from 4.5V to 15.5V
60
7
80
dB
µA
S
I
No load
500
750
S
1V ≤ V
≤14V, 20% to 80%
10
500
12
V/µs
ns
OUT
V = 2V step
O
t
Settling to +0.1%
-3dB Bandwidth
S
BW
R
= 10kΩ, C = 10pF
MHz
dB
L
L
CS
Channel Separation
f = 5MHz
75
NOTES:
1. Measured over the operating temperature range
2. Parameter is guaranteed (but not test) by design and characterization data
3. Slew rate is measured on rising and falling edges
4
EL5421
Typical Performance Curves
1800
70
60
50
40
30
20
10
0
V =±5V
TYPICAL
V =±5V
TYPICAL
S
S
1600
1400
1200
1000
800
600
400
200
0
T =25°C
PRODUCTION
DISTRIBUTION
PRODUCTION
DISTRIBUTION
A
INPUT OFFSET VOLTAGE (mV)
INPUT OFFSET VOLTAGE DRIFT, TCV
(µV/°C)
OS
FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION
FIGURE 2. INPUT OFFSET VOLTAGE DRIFT
10
2.0
V =±5V
S
V =±5V
S
5
0
0.0
-2.0
-5
-50
0
50
100
150
-50
0
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE
FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE
-4.91
4.97
4.96
4.95
4.94
V =±5V
S
I
=-5mA
OUT
-4.92
-4.93
-4.94
-4.95
-4.96
-4.97
V =±5V
S
OUT
I
=5mA
4.93
-50
0
50
100
150
-50
0
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 5. OUTPUT HIGH VOLTGE vs TEMPERATURE
FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE
5
EL5421
Typical Performance Curves
10.40
10.35
10.30
10.25
V =±5V
S
V =±5V
S
1.0005
1.0000
0.9995
-50
0
50
100
150
-50
0
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 7. VOLTAGE GAIN vs TEMPERATURE
FIGURE 8. SLEW RATE vs TEMPERATURE
700
T =25°C
V =±5V
S
A
0.55
0.5
600
500
400
300
0.45
-50
0
50
100
150
0
5
10
15
20
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
FIGURE 9. SUPPLY CURRENT PER CHANNEL vs
TEMPERATURE
FIGURE 10. SUPPLY CURRENT PER CHANNEL vs SUPPLY
VOLTAGE
5
20
R =10kΩ
L
V =±5V
S
10kΩ
10
0
0
12pF
50pF
1kΩ
560Ω
-5
150Ω
-10
-20
-30
100pF
-10
1000pF
1M
C =10pF
L
V =±5V
S
-15
100K
1M
10M
100M
100K
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS R
FIGURE 12. FREQUENCY RESPONSE FOR VARIOUS C
L
L
6
EL5421
Typical Performance Curves
200
12
10
8
T =25°C
A
V =±5V
S
160
120
80
6
V =±5V
S
4
T =25°C
A
R =10kΩ
L
40
2
C =12pF
L
DISTORTION <1%
0
0
10K
100K
1M
10M
10K
100K
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 13. OUT PUT IMPEDANCE vs FREQUENCY
FIGURE 14. MAXIMUM OUTPUT SWING vs FREQUENCY
600
80
PSRR+
PSRR-
60
100
10
1
40
20
T =25°C
A
V =±5V
S
0
100
1K
10K
100K
1M
10M
100M
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 15. PSRR vs FREQUENCY
FIGURE 16. INPUT VOLTAGE NOISE SPECTRAL DENSITY vs
FREQUENCY
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
-60
V =±5V
S
DUAL MEASURED CH A TO B
QUAD MEASURED CH A TO D OR B TO C
OTHER COMBINATIONS YIELD IMPROVED
R =10kΩ
L
V
=1V
RMS
IN
-80
-100
-120
-140
REJECTION
V =±5V
S
R =10kΩ
L
V
=220mV
IN
RMS
1K
10K
100K
FREQUENCY (Hz)
1M
6M
1K
10K
100K
FREQUENCY (Hz)
FIGURE 17. TOTAL HARMONIC DISTORTION + NOISE vs
FREQUENCY
FIGURE 18. CHANNEL SEPARATION vs FREQUENCY
RESPONSE
7
EL5421
Typical Performance Curves
5
3
V =±5V
S
V =±5V
S
90
R =10kΩ
R =10kΩ
L
L
0.1%
0.1%
V
=±50mV
C =12pF
L
IN
T =25°C
T =25°C
A
A
70
50
30
10
1
-1
-3
-5
10
100
1K
0
200
400
600
800
LOAD CAPACITANCE (pF)
SETTLING TIME (ns)
FIGURE 19. SMALL SIGNAL OVERSHOOT vs LOAD
CAPACITANCE
FIGURE 20. SETTLING TIME vs STEP SIZE
1V
1µs
50mV
200ns
V =±5V
S
T =25°C
A
V =±5V
S
R =10kΩ
L
T =25°C
A
C =12pF
L
R =10kΩ
L
C =12pF
L
FIGURE 21. LARGE SIGNAL TRANSIENT RESPONSE
FIGURE 22. SMALL SIGNAL TRANSIENT REPOSNE
8
EL5421
Pin Descriptions
PIN NUMBER
PIN NAME
FUNCTION
EQUIVALENT CIRCUIT
1
VOUTA
Buffer A Output
V +
S
V -
S
GND
CIRCUIT 1
2
VINA
Buffer A Input
V +
S
V -
S
CIRCUIT 2
3
4
VS+
VINB
Positive Power Supply
Buffer B Input
(Reference Circuit 1)
(Reference Circuit 2)
(Reference Circuit 2)
(Reference Circuit 1)
5
VOUTB
VOUTC
VINC
Buffer B Output
Buffer C Output
Buffer C Input
6
7
8
VS-
Negative Power Supply
Buffer D Input
9
VIND
(Reference Circuit 2)
(Reference Circuit 1)
10
VOUTD
Buffer D Output
voltage range even closer to the supply rails. Figure 23
shows the input and output waveforms for the device.
Operation is from ±5V supply with a 10kΩ load connected to
Applications Information
Product Description
The EL5421 unity gain buffer is fabricated using a high
voltage CMOS process. It exhibits rail-to-rail input and
output capability, and has low power consumption (500µA
per buffer). These features make the EL5421 ideal for a wide
range of general-purpose applications. When driving a load
of 10kΩ and 12pF, the EL5421 has a -3dB bandwidth of
12MHz and exhibits 10V/µs slew rate.
GND. The input is a 10V
sinusoid. The output voltage is
P-P
P-P
approximately 9.985V
.
10µs
5V
Operating Voltage, Input, and Output
The EL5421 is specified with a single nominal supply voltage
from 5V to 15V or a split supply with its total range from 5V
to 15V. Correct operation is guaranteed for a supply range of
4.5V to 16.5V. Most EL5421 specifications are stable over
both the full supply range and operating temperatures of
-40°C to +85°C. Parameter variations with operating voltage
and/or temperature are shown in the typical performance
curves.
V =±5V
S
T =25°C
A
V
=10V
P-P
IN
5V
FIGURE 23. OPERATION WITH RAIL-TO-RAIL INPUT AND
OUTPUT
Short Circuit Current Limit
The EL5421 will limit the short circuit current to ±120mA if
the output is directly shorted to the positive or the negative
The output swings of the EL5421 typically extend to within
80mV of positive and negative supply rails with load currents
of 5mA. Decreasing load currents will extend the output
9
EL5421
supply. If an output is shorted indefinitely, the power
dissipation could easily increase such that the device may
be damaged. Maximum reliability is maintained if the output
continuous current never exceeds ±30mA. This limit is set by
the design of the internal metal interconnects.
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
P
= Σi[V × I
+ (V + – V
i) × I
i]
LOAD
DMAX
S
SMAX
S
OUT
Output Phase Reversal
when sourcing, and:
The EL5421 is immune to phase reversal as long as the
input voltage is limited from V - -0.5V to V + +0.5V. Figure
S
S
P
= Σi[V × I
+ (V
i – V -) × I
i]
LOAD
24 shows a photo of the output of the device with the input
voltage driven beyond the supply rails. Although the device's
output will not change phase, the input's overvoltage should
be avoided. If an input voltage exceeds supply voltage by
more than 0.6V, electrostatic protection diodes placed in the
input stage of the device begin to conduct and overvoltage
damage could occur.
DMAX
S
SMAX
OUT
S
when sinking.
Where:
i = 1 to 4 for quad
V
= Total supply voltage
S
10µs
1V
I
= Maximum supply current per channel
SMAX
V
i = Maximum output voltage of the application
OUT
I
i = Load current
LOAD
If we set the two P
DMAX
equations equal to each other, we
can solve for R
i to avoid device overheat. Figures 25
LOAD
and 26 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
V =±2.5V
S
T =25°C
A
V
=6V
IN
P-P
1V
simple matter to see if P
exceeds the device's power
DMAX
FIGURE 24. OPERATION WITH BEYOND-THE-RAILS INPUT
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figures 25 and 26.
Power Dissipation
With the high-output drive capability of the EL5421 buffer, it
is possible to exceed the 125°C 'absolute-maximum junction
temperature' under certain load current conditions.
Therefore, it is important to calculate the maximum junction
temperature for the application to determine if load
conditions need to be modified for the buffer to remain in the
safe operating area.
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
0.9
870mW
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
The maximum power dissipation allowed in a package is
determined according to:
T
– T
AMAX
JMAX
P
= --------------------------------------------
DMAX
Θ
JA
where:
0
25
50
75 85 100
125
T
= Maximum junction temperature
AMBIENT TEMPERATURE (°C)
JMAX
T
= Maximum ambient temperature
AMAX
FIGURE 25. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
θ
= Thermal resistance of the package
JA
P
= Maximum power dissipation in the package
DMAX
10
EL5421
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5421 can provide gain at high frequency. As with any
high-frequency device, good printed circuit board layout is
necessary for optimum performance. Ground plane
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.6
0.5
0.4
0.3
0.2
0.1
0
486mW
construction is highly recommended, lead lengths should be
as short as possible and the power supply pins must be well
bypassed to reduce the risk of oscillation. For normal single
supply operation, where the V - pin is connected to ground,
S
a 0.1µF ceramic capacitor should be placed from V + to pin
S
to V - pin. A 4.7µF tantalum capacitor should then be
S
connected in parallel, placed in the region of the buffer. One
4.7µF capacitor may be used for multiple devices. This same
capacitor combination should be placed at each supply pin
to ground if split supplies are to be used.
0
25
50
75 85 100
125
AMBIENT TEMPERATURE (°C)
FIGURE 26. PACKAGE POWER DISSIPATION VS AMBIENT
TEMPERATURE
Unused Buffers
It is recommended that any unused buffer have the input tied
to the ground plane.
Driving Capacitive Loads
The EL5421 can drive a wide range of capacitive loads. As
load capacitance increases, however, the -3dB bandwidth of
the device will decrease and the peaking increase. The
buffers drive 10pF loads in parallel with 10kΩ with just 1.5dB
of peaking, and 100pF with 6.4dB of peaking. If less peaking
is desired in these applications, a small series resistor
(usually between 5Ω and 50Ω) can be placed in series with
the output. However, this will obviously reduce the gain
slightly. Another method of reducing peaking is to add a
"snubber" circuit at the output. A snubber is a shunt load
consisting of a resistor in series with a capacitor. Values of
150Ω and 10nF are typical. The advantage of a snubber is
that it does not draw any DC load current or reduce the gain
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
相关型号：
EL5421TIYZ-T13
12MHz Rail-to-Rail Input-Output Buffer; MSOP10; Temp Range: -40° to 85°C
RENESAS
EL5421TIYZ-T7
12MHz Rail-to-Rail Input-Output Buffer; MSOP10; Temp Range: -40° to 85°C
RENESAS
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