EL7532 [INTERSIL]

Monolithic 2A Step-Down Regulator; 单片式2A降压稳压器
EL7532
型号: EL7532
厂家: Intersil    Intersil
描述:

Monolithic 2A Step-Down Regulator
单片式2A降压稳压器

稳压器
文件: 总9页 (文件大小:361K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EL7532  
®
Data Sheet  
August 12, 2005  
FN7435.5  
Monolithic 2A Step-Down Regulator  
Features  
• 2A continuous current (from -40°C to +85°C)  
The EL7532 is a synchronous, integrated FET 2A step-down  
regulator with internal compensation. It operates with an  
input voltage range from 2.5V to 5.5V, which accommodates  
supplies of 3.3V, 5V, or a single Li-Ion battery source. The  
2
• Less than 0.18 in footprint for the complete 2A converter  
• Max height 1.1mm MSOP10  
output can be externally set from 0.8V to V with a resistive  
IN  
• 1.5MHz (typ.) switching frequency  
• 100ms Power-On-Reset output (POR)  
• Internally-compensated voltage mode controller  
• Up to 94% efficiency  
divider.  
The EL7532 features PWM mode control. The operating  
frequency is typically 1.5MHz. Additional features include a  
100ms Power-On-Reset output, <1µA shut-down current,  
short-circuit protection, and over-temperature protection.  
• <1µA shut-down current  
The EL7532 is available in the 10-pin MSOP package,  
making the entire converter occupy less than 0.18 in of  
PCB area with components on one side only. The package is  
specified for operation over the full -40°C to +85°C  
temperature range.  
• Overcurrent and over temperature protection  
• Pb-Free plus anneal available (RoHS compliant)  
2
Applications  
• PDA and pocket PC computers  
Ordering Information  
• Bar code readers  
PART NUMBER  
TAPE &  
REEL  
PKG.  
• ADSL Modems  
(BRAND)  
PACKAGE  
DWG. #  
• Portable instruments  
• Li-Ion battery powered devices  
• ASIC/FPGA/DSP supplies  
• Set Top Boxes  
EL7532IY  
10-Pin MSOP  
-
MDP0043  
MDP0043  
MDP0043  
MDP0043  
MDP0043  
MDP0043  
(BABAA)  
EL7532IY-T7  
(BABAA)  
10-Pin MSOP  
10-Pin MSOP  
7”  
EL7532IY-T13  
(BABAA)  
13”  
-
Typical Application Schematic  
EL7532IYZ  
(BAARA) (Note)  
10-Pin MSOP  
(Pb-free)  
EL7532IYZ-T7  
(BAARA) (Note)  
10-Pin MSOP  
(Pb-free)  
7”  
V
(2.5V-6V)  
V
(1.8V@ 2A)  
IN  
O
VIN  
VO  
LX  
R
3
C
1
100  
EL7532IYZ-T13  
(BAARA) (Note)  
10-Pin MSOP  
(Pb-free)  
13”  
10µF  
L
1
VDD  
C
2
10µF  
1.8µH  
C
0.1µF  
3
EL7532  
NOTE: Intersil Pb-free plus anneal products employ special Pb-free  
material sets; molding compounds/die attach materials and 100%  
matte tin plate termination finish, which are RoHS compliant and  
compatible with both SnPb and Pb-free soldering operations. Intersil  
Pb-free products are MSL classified at Pb-free peak reflow  
temperatures that meet or exceed the Pb-free requirements of  
IPC/JEDEC J STD-020.  
FB  
R *  
EN  
2
124kΩ  
SGND  
PGND  
POR  
RSI  
R *  
100kΩ  
1
* V = 0.8V * (1 + R / R )  
O
2
1
Pinout  
SGND  
PGND  
LX  
FB  
VO  
1
2
3
4
5
10  
9
POR  
EN  
8
VIN  
7
6
VDD  
RSI  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2004, 2005. All Rights Reserved.  
1
All other trademarks mentioned are the property of their respective owners.  
EL7532  
Absolute Maximum Ratings (T = 25°C)  
Thermal Information  
Thermal Resistance (Typical)  
MSOP10 Package (Note 1) . . . . . . . . . . . . . . . . . . .  
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C  
A
V
, V , POR to SGND. . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V  
θ
(°C/W)  
115  
IN DD  
JA  
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V + +0.3V)  
IN  
IN  
RSI, EN, V , FB to SGND. . . . . . . . . . . . . . . -0.3V to (V + +0.3V)  
O
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V  
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4A  
ESD Classification  
Human Body Model (Per JESD22-A114-B) . . . . . . . . . . . . Class 2  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are  
at the specified temperature and are pulsed tests, therefore: T = T = T  
A
J
C
NOTE:  
1. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
Electrical Specifications  
V
= V = V  
IN  
= 3.3V, C1 = C2 = 10µF, L = 1.8µH, V = 1.8V, unless otherwise specified.  
EN O  
DD  
PARAMETER  
DESCRIPTION  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
DC CHARACTERISTICS  
V
Feedback Input Voltage  
790  
800  
810  
250  
5.5  
2.2  
2.4  
500  
1
mV  
nA  
V
FB  
I
Feedback Input Current  
Input Voltage  
FB  
V
V
V
, V  
2.5  
2
IN DD  
IN,OFF  
IN,ON  
Minimum Voltage for Shutdown  
Maximum Voltage for Startup  
Supply Current  
V
V
falling  
rising  
V
IN  
IN  
2.2  
V
I
PWM, V = V  
IN DD  
= 5V  
= 5V  
400  
0.1  
52  
µA  
µA  
mΩ  
mΩ  
A
DD  
EN = 0, V = V  
IN  
DD  
R
R
PMOS FET Resistance  
NMOS FET Resistance  
Current Limit (GBD)  
V
= 5V, wafer test only  
= 5V, wafer test only  
80  
DS(ON)-PMOS  
DS(ON)-NMOS  
LMAX  
DD  
DD  
V
35  
65  
I
3
T
Over-temperature Threshold (GBD)  
Over-temperature Hysteresis (GBD)  
EN, RSI Current  
T rising  
T falling  
145  
130  
°C  
°C  
V
OT,OFF  
OT,ON  
T
I
, I  
EN RSI  
V
V
V
V
V
, V  
EN RSI  
= 0V and 3.3V  
-1  
0.8  
86  
1
V
V
V
, V  
EN1 RSI1  
EN, RSI Rising Threshold  
EN, RSI Falling Threshold  
= 3.3V  
= 3.3V  
rising  
2.4  
V
DD  
DD  
, V  
V
EN2 RSI2  
Minimum V for POR, WRT Targeted  
FB  
95  
70  
%
POR  
FB  
V
Value  
FB  
falling  
%
FB  
V
V
V
POR Voltage Drop  
I
= 5mA  
35  
0.1  
0.5  
mV  
%/V  
%
OLPOR  
SINK  
Line Regulation (GBD)  
Load Regulation (GBD)  
V
V
= 2.5V to 6V, I  
= 2A, V  
= 1.8V  
LINEREG  
LOADREG  
IN  
IN  
OUT  
OUT  
= 0 to 2A  
OUT  
= 3.3V, V  
= 1.8V, I  
OUT  
AC CHARACTERISTICS  
F
PWM Switching Frequency  
Minimum RSI Pulse Width (GBD)  
Soft-start Time (GBD)  
1.35  
80  
1.5  
25  
1.65  
50  
MHz  
ns  
PWM  
t
t
t
Guaranteed by design  
RSI  
650  
100  
µs  
SS  
Power On Reset Delay Time (GBD)  
120  
ms  
POR  
GBD = Guaranteed By Design  
FN7435.5  
2
August 12, 2005  
EL7532  
Pin Descriptions  
PIN NUMBER  
PIN NAME  
PIN FUNCTION  
1
2
SGND  
PGND  
LX  
Negative supply for the controller stage  
Negative supply for the power stage  
3
Inductor drive pin; high current digital output with average voltage equal to the regulator output voltage  
Positive supply for the power stage  
4
VIN  
5
VDD  
RSI  
Power supply for the controller stage  
6
Resets POR timer; Connect to ground if not used  
Enable; Can be connected directly to the VIN for enable  
Power on reset open drain output; Leave open if not used  
Output voltage sense pin  
7
EN  
8
POR  
VO  
9
10  
FB  
Voltage feedback input; connected to an external resistor divider between V and SGND for variable  
O
output  
Block Diagram  
5
V
DD  
V
O
9
+
-
4
10pF  
V
IN  
124K  
CURRENT  
LIMIT  
FB  
5M  
10  
-
+
PWM  
COMPEN-  
SATION  
+
-
PWM  
COMPARATOR  
P-DRIVER  
100K  
1.8µ  
LX  
CONTROL  
LOGIC  
RAMP  
GENERATOR  
CLOCK  
1.5MHz  
1.8V  
2A  
3
EN  
7
EN  
SOFT-  
START  
10µF  
10µF  
N-DRIVER  
UNDER-  
VOLTAGE  
LOCKOUT  
+
PGND  
POR  
2
BANDGAP  
REFERENCE  
100K  
PG  
2.5V-  
5V  
TEMPERATURE  
SENSE  
1
6
SGND  
RSI  
8
POR  
FN7435.5  
3
August 12, 2005  
EL7532  
Typical Performance Curves  
100  
80  
100  
80  
60  
40  
20  
0
60  
V
=1.2V  
V
O
=3.3V  
O
O
V
=1.8V  
O
V
=2.5V  
O
40  
20  
0
V
=1.2V  
O
V
=1.8V  
MAXIMUM EFFICIENCY, η=95%  
0.5 1.5  
(A)  
MAXIMUM EFFICIENCY, η=95%  
0
1
2
2.5  
2.5  
2.5  
0
0.5  
1
1.5  
2
2.5  
I
I
(A)  
OUT  
OUT  
FIGURE 1. EFFICIENCY vs I  
@ V =5V  
IN  
FIGURE 2. EFFICIENCY vs I  
@ V =3.3V  
IN  
OUT  
OUT  
100  
80  
1
I
=2A  
O
V
=0.8V  
0.6  
0.2  
-0.2  
-0.6  
-1  
O
60  
V
=1.8V  
O
V
=2.5V  
O
40  
V
=1.2V  
O
V
4
=3.3V  
O
20  
MAXIMUM EFFICIENCY, η=94%  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4.5  
(V)  
5
5.5  
6
I
(A)  
V
IN  
OUT  
FIGURE 3. EFFICIENCY vs I  
@ V =2.5V  
IN  
FIGURE 4. LINE REGULATION  
OUT  
1
1
0.6  
0.2  
-0.2  
-0.6  
-1  
0.6  
V
V
=0.8V  
=3.3V  
O
O
0.2  
-0.2  
-0.6  
-1  
V
V
=0.8V  
=2.5V  
O
O
0
0.5  
1
1.5  
2
0
0.5  
1
1.5  
(A)  
2
2.5  
I
(A)  
I
OUT  
OUT  
FIGURE 5. LOAD REGULATION @ V =5V  
IN  
FIGURE 6. LOAD REGULATION @ V =3.3V  
IN  
FN7435.5  
August 12, 2005  
4
EL7532  
Typical Performance Curves (Continued)  
1
V  
100mV/d  
0.5A/d  
IN  
V
V
=0.8V  
O
O
0.5  
0
i
L
=1.8V  
V
2V/d  
LX  
-0.5  
-1  
V  
10mV/d  
O
0
0.5  
1
1.5  
(A)  
2
2.5  
1µs/d  
I
OUT  
FIGURE 7. LOAD REGULATION @ V =2.5V  
IN  
FIGURE 8. LOAD REGULATION @ V =2.5V  
IN  
V
V
IN  
IN  
(1V/d)  
(2V/d)  
V
O
I
(2V/d)  
IN  
(0.5A/d)  
POR  
(2V/d)  
V
O
(1V/d)  
50ms/d  
0.5ms/d  
FIGURE 9. START-UP 1  
FIGURE 10. START-UP 2  
V
IN  
(2V/d)  
V  
O
50mV/d  
V
O
(2V/d)  
2A  
RSI  
(2V/d)  
I
O
POR  
(2V/d)  
0.1A  
50ms/d  
0.5ms/d  
FIGURE 11. POR FUNCTION  
FIGURE 12. TRANSIENT RESPONSE  
FN7435.5  
August 12, 2005  
5
EL7532  
Typical Performance Curves (Continued)  
JEDEC JESD51-3 LOW EFFECTIVE THERMAL  
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL  
CONDUCTIVITY TEST BOARD  
CONDUCTIVITY TEST BOARD  
0.6  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
870mW  
486mW  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0
25  
50  
75 85 100  
125  
0
25  
50  
75 85 100  
125  
AMBIENT TEMPERATURE (°C)  
AMBIENT TEMPERATURE (°C)  
FIGURE 13. PACKAGE POWER DISSIPATION vs AMBIENT  
TEMPERATURE  
FIGURE 14. PACKAGE POWER DISSIPATION vs AMBIENT  
TEMPERATURE  
FN7435.5  
August 12, 2005  
6
EL7532  
Where RL is the DC resistance on the inductor and R  
the PFET on-resistance, nominal 70mat room temperature  
with tempco of 0.2m/°C.  
Applications Information  
Product Description  
DSON1  
The EL7532 is a synchronous, integrated FET 2A step-down  
regulator which operates from an input of 2.5V to 6V. The  
output voltage is user-adjustable with a pair of external  
resistors.  
As the input voltage drops gradually close or even below the  
preset V , the converter gets into 100% duty ratio. At this  
O
condition, the upper PFET needs some minimum turn-off  
time if it is turned off. This off-time is related to input/output  
conditions. This makes the duty ratio appear randomly and  
increases the output ripple somewhat until the 100% duty  
ratio is reached. A larger output capacitor could reduce the  
random-looking ripple. Users need to verify if this condition  
has an adverse effect on the overall circuit if close to 100%  
duty ratio is expected.  
The internally-compensated controller makes it possible to  
use only two ceramic capacitors and one inductor to form a  
complete, very small footprint 2A DC-DC converter.  
Start-Up and Shut-Down  
When the EN pin is tied to V , and V reaches  
IN  
IN  
approximately 2.4V, the regulator begins to switch. The  
output voltage is gradually increased to ensure proper soft-  
start operation.  
RSI/POR Function  
When powering up, the open-collector Power-On-Reset  
output holds low for about 100ms after V reaches the  
O
When the EN pin is connected to a logic low, the EL7532 is  
in the shut-down mode. All the control circuitry and both  
preset voltage. When the active-HI reset signal RSI is  
issued, POR goes to low immediately and holds for the  
same period of time after RSI comes back to LOW. The  
output voltage is unaffected. (Please refer to the timing  
diagram). When the function is not used, connect RSI to  
MOSFETs are off, and V  
falls to zero. In this mode, the  
OUT  
total input current is less than 1µA.  
When the EN reaches logic HI, the regulator repeats the  
start-up procedure, including the soft-start function.  
ground and leave open the pull-up resister R at POR pin.  
4
PWM Operation  
The POR output also serves as a 100ms delayed Power  
Good signal when the pull-up resister R is installed. The  
In the PWM mode, the P channel MOSFET and N channel  
MOSFET always operate complementary. When the  
PMOSFET is on and the NMOSFET off, the inductor current  
increases linearly. The input energy is transferred to the  
output and also stored in the inductor. When the P channel  
MOSFET is off and the N channel MOSFET on, the inductor  
current decreases linearly, and energy is transferred from  
the inductor to the output. Hence, the average current  
through the inductor is the output current. Since the inductor  
and the output capacitor act as a low pass filter, the duty  
4
RSI pin needs to be directly (or indirectly through a resister  
R ) connected to Ground for this to function properly.  
6
V
O
MIN  
25ns  
RSI  
cycle ratio is approximately equal to V divided by V  
.
100ms  
100ms  
O
IN  
POR  
The output LC filter has a second order effect. To maintain  
the stability of the converter, the overall controller must be  
compensated. This is done with the fixed internally  
compensated error amplifier and the PWM compensator.  
Because the compensations are fixed, the values of input  
and output capacitors are 10µF to 22µF ceramic. The  
inductor is nominally 1.8µH, though 1.5µH to 2.2µH can be  
used.  
FIGURE 15. RSI & POR TIMING DIAGRAM  
Output Voltage Selection  
Users can set the output voltage of the converter with a  
resister divider, which can be chosen based on the following  
formula:  
100% Duty Ratio Operation  
R
R
2
V
= 0.8 × 1 + ------  
EL7532 utilizes CMOS power FET's as the internal  
synchronous power switches. The upper switch is a PMOS  
and lower switch a NMOS. This not only saves a boot  
capacitor, it also allows 100% turn-on of the upper PFET  
O
1
Component Selection  
Because of the fixed internal compensation, the component  
choice is relatively narrow. We recommend 10µF to 22µF  
multi-layer ceramic capacitors with X5R or X7R rating for  
both the input and output capacitors, and 1.5µH to 2.2µH  
inductance for the inductor.  
switch, achieving V close to V . The maximum achievable  
O
IN  
V
is,  
O
V
= V (R + R  
) × I  
DSON1 O  
O
IN  
L
FN7435.5  
7
August 12, 2005  
EL7532  
At extreme conditions (V < 3V, I > 0.7A, and junction  
Layout Considerations  
The layout is very important for the converter to function  
properly. The following PC layout guidelines should be  
followed:  
IN  
O
temperature higher than 75°C), input cap C is  
1
recommended to be 22µF. Otherwise, if any of the above 3  
conditions is not true, C can remain as low as 10µF.  
1
The RMS current present at the input capacitor is decided by  
the following formula:  
• Separate the Power Ground ( ) and Signal Ground ( );  
connect them only at one point right at the pins  
V
× (V - V  
)
• Place the input capacitor as close to V and PGND pins  
IN  
O
IN  
O
-----------------------------------------------  
I
=
× I  
INRMS  
O
V
as possible  
IN  
• Make the following PC traces as small as possible:  
This is about half of the output current I for all the V . This  
O
O
- from L pin to L  
X
input capacitor must be able to handle this current.  
- from C to PGND  
O
The inductor peak-to-peak ripple current is given as:  
• If used, connect the trace from the FB pin to R and R as  
1
2
close as possible  
• Maximize the copper area around the PGND pin  
(V - V ) × V  
O
IN  
O
I = --------------------------------------------  
IL  
L × V × f  
IN  
S
• Place several via holes under the chip to additional ground  
plane to improve heat dissipation  
• L is the inductance  
• f the switching frequency (nominally 1.5MHz)  
S
The demo board is a good example of layout based on this  
outline. Please refer to the EL7532 Application Brief.  
The inductor must be able to handle I for the RMS load  
O
current, and to assure that the inductor is reliable, it must  
handle the 3A surge current that can occur during a current  
limit condition.  
Current Limit and Short-Circuit Protection  
The current limit is set at about 3A for the PMOS. When a  
short-circuit occurs in the load, the preset current limit  
restricts the amount of current available to the output, which  
causes the output voltage to drop below the preset voltage.  
In the meantime, the excessive current heats up the  
regulator until it reaches the thermal shut-down point.  
Thermal Shut-Down  
Once the junction reaches about 145°C, the regulator shuts  
down. Both the P channel and the N channel MOSFETs turn  
off. The output voltage will drop to zero. With the output  
MOSFETs turned off, the regulator will soon cool down.  
Once the junction temperature drops to about 130°C, the  
regulator will restart again in the same manner as the EN pin  
connects to logic HI.  
Thermal Performance  
The EL7532 is in a fused-lead MSOP10 package. Compared  
to the regular MSOP10 package, the fused-lead package  
provides lower thermal resistance. The typical θ of  
JA  
115°C/W (See Thermal Information section in spec table)  
can be improved by maximizing the copper area around the  
pins. A θ of 100°C/W can be achieved on a 4-layer board  
JA  
and 125°C/W on a 2-layer board. Refer to Intersil’s Tech  
Brief, TB379, for more information on thermal resistance.  
FN7435.5  
8
August 12, 2005  
EL7532  
MSOP Package Outline Drawing  
NOTE: The package drawing shown here may not be the latest version. To check the latest revision, please refer to the Intersil website at  
<http://www.intersil.com/design/packages/index.asp>  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
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FN7435.5  
9
August 12, 2005  

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