FRE160H [INTERSIL]
41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs; 41A ， 100V ， 0.050欧姆，抗辐射， N沟道功率MOSFET
| 型号： | FRE160H |
| 厂家： | 
Intersil |
| 描述： | 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRE160D, FRE160R,
FRE160H
41A, 100V, 0.050 Ohm, Rad Hard,
N-Channel Power MOSFETs
June 1998
Features
Package
• 41A, 100V, RDS(on) = 0.050Ω
TO-258AA
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 10nA Per-RAD(Si)/sec Typically
2
• Neutron
- Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
Description
Symbol
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified
FRE160D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
100
100
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
41
26
100
±20
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
150
60
1.20
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
100
41
100
A
A
A
o
-55 to +150
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 3258.2
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-37
FRE160D, FRE160R, FRE160H
o
Pre-Radiation Electrical Specifications TC = +25 C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Volts
Gate-Treshold Volts
SYMBOL
BVDSS
VGS(th)
IGSSF
TEST CONDITIONS
VGS = 0, ID = 1mA
MIN
100
2.0
-
MAX
-
UNITS
V
VDS = VGS, ID = 1mA
VGS = +20V
4.0
100
100
V
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
nA
IGSSR
VGS = -20V
-
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0,TC = +125 C
-
-
-
1
0.025
0.25
mA
o
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
IAR
VDS(on)
RDS(on)
td(on)
tr
Time = 20µs
-
-
100
2.15
0.050
100
700
400
300
16
A
V
Ω
VGS = 10V, ID = 41A
VGS = 10V, ID = 26A
-
VDD = 50V, ID = 41A
Pulse Width = 3µs
Period = 300µs Rg = 10Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
-
-
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
QG(th)
QG(on)s
QGM
VGP
4
94
182
3
376
728
16
nc
VDD = 50V, ID = 41A
IGS1 = IGS2
0 ≤ VGS ≤ 20
Plateau Voltage
V
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
QGS
QGD
VSD
21
52
0.6
-
86
nc
210
1.8
ID = 41A, VGD = 0
I = 41A; di/dt = 100A/µs
-
V
TT
600
0.83
48
ns
Rθjc
-
o
C/W
Junction-To-Ambient
Rθja
Free Air Operation
-
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DD
V
DS
L
R
L
+
I
-
CURRENT
TRANSFORMER
V
AS
DS
V
= 12V
GS
VARY t TO OBTAIN
P
DUT
+
50Ω
REQUIRED PEAK I
AS
V
DD
0V
V
≤ 20V
GS
-
R
50V-150V
DUT
GS
50Ω
t
P
0V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-38
FRE160D, FRE160R, FRE160H
o
Post-Radiation Electrical Specifications TC = +25 C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
SYMBOL
BVDSS
BVDSS
VGS(th)
VGS(th)
IGSSF
TYPE
TEST CONDITIONS
VGS = 0, ID = 1mA
MIN
MAX
-
UNITS
V
(Note 4,6)
(Note 5,6)
(Note 4,6)
(Note 3,5,6)
(Note 4,6)
(Note 5,6)
(Note 2,4,6)
(Note 2,5,6)
(Note 4,6)
(Note 5,6)
(Note 1,4,6)
(Note 1,5,6)
(Note 1,4,6)
(Note 1,5,6)
FRE160D, R
FRE160H
100
Breakdown Volts
VGS = 0, ID = 1mA
95
-
V
Gate-Source
Threshold Volts
FRE160D, R
FRE160H
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 80V
VGS = 0, VDS = 80V
VGS = 10V, ID = 41A
VGS = 16V, ID = 41A
VGS = 10V, ID = 26A
VGS = 14V, ID = 26A
2.0
4.0
4.5
100
200
100
200
25
V
1.5
V
Gate-Body
Leakage Forward
FRE160D, R
FRE160H
-
-
-
-
-
-
-
-
-
-
nA
nA
nA
nA
µA
µA
V
IGSSF
Gate-Body
Leakage Reverse
IGSSR
IGSSR
IDSS
FRE160D, R
FRE160H
Zero-Gate Voltage
Drain Current
FRE160D, R
FRE160H
IDSS
100
2.15
3.23
.050
.075
Drain-Source
On-State Volts
VDS(on)
VDS(on)
RDS(on)
RDS(on)
FRE160D, R
FRE160H
V
Drain-Source
On Resistance
FRE160D, R
FRE160H
Ω
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/11/89 on TA 17661 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
4-39
FRE160D, FRE160R, FRE160H
Typical Performance Characteristics
4-40
FRE160D, FRE160R, FRE160H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
C. Preconditioning - Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
B. Assembly Flow Chart
C. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- X-Ray and X-Ray Report
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-41
FRE160D, FRE160R, FRE160H
TO-258AA
3 LEAD JEDEC STYLE TO-258AA HERMETIC METAL PACKAGE
INCHES
MIN
MILLIMETERS
0.080 R MAX. (2 PLC'S)
E
A
1
SYMBOL
MAX
0.270
0.045
0.045
0.830
0.695
MIN
6.35
MAX
6.85
NOTES
ØP
A
A
0.250
0.035
0.035
0.815
0.685
-
Q
A
0.89
1.14
-
1
H
1
Øb
D
0.89
1.14
2, 3
20.71
17.40
21.08
17.65
-
-
D
E
e
0.200 TYP
0.400 BSC
5.08 TYP
10.16 BSC
4
4
-
e
1
H
0.270
0.290
0.150
0.650
0.165
0.125
6.86
7.36
3.81
1
1
J
0.130
0.600
0.155
0.115
3.31
15.24
3.94
4
-
0.075 R
(4 PLC'S)
L
16.51
4.19
ØP
Q
-
Øb
L
2.93
3.17
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC TO-258AA outline dated 2-88. Except Øb.
1
2
3
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
J
e
1
e1
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 2 dated 5-98.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
4-42
相关型号：
FRE160R1
Power Field-Effect Transistor, 41A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
RENESAS
FRE260D1
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
FAIRCHILD
FRE260D1
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
RENESAS
©2020 ICPDF网 联系我们和版权申明