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FSYC160R1 [INTERSIL]

Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs; 抗辐射，抗SEGR ，N沟道功率MOSFET
FSYC160R1
型号： FSYC160R1
厂家： Intersil    Intersil
描述：

Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
抗辐射，抗SEGR ，N沟道功率MOSFET
文件： 总8页 (文件大小：53K)
中文：  中文翻译
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FSYC160D,  
FSYC160R  
Radiation Hardened, SEGR Resistant,  
N-Channel Power MOSFETs  
July 1998  
Features  
Description  
• 70A, 100V, r  
• Total Dose  
= 0.022Ω  
The Discrete Products Operation of Intersil has developed a  
series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Enhanced Power MOSFET immunity to Single Event Effects  
(SEE), Single Event Gate Rupture (SEGR) in particular, is  
combined with 100K RADS of total dose hardness to provide  
devices which are ideally suited to harsh space environ-  
ments. The dose rate and neutron tolerance necessary for  
military applications have not been sacrificed.  
DS(ON)  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant. The MOSFET is well suited for applications  
exposed to radiation environments such as switching regula-  
tion, switching converters, motor drives, relay drivers and  
drivers for high-power bipolar switching transistors requiring  
high speed and low gate drive power. This type can be  
operated directly from integrated circuits.  
• Photo Current  
- 9nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3e13 Neutrons/cm  
2
2
- Usable to 3e14 Neutrons/cm  
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
Ordering Information  
RAD LEVEL  
10K  
SCREENING LEVEL  
Commercial  
TXV  
PART NO./BRAND  
FSYC160D1  
FSYC160D3  
FSYC160R1  
FSYC160R3  
FSYC160R4  
10K  
Symbol  
D
100K  
100K  
100K  
Commercial  
TXV  
G
Space  
S
Formerly available as type TA17666.  
Package  
SMD-2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4547  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1
FSYC160D, FSYC160R  
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
FSYC160D, FSYC160R  
UNITS  
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
100  
100  
V
V
DS  
Drain to Gate Voltage (R  
GS  
= 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
DGR  
Continuous Drain Current  
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
70  
46  
A
A
A
V
C
D
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
200  
±20  
DM  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
Maximum Power Dissipation  
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
208  
83  
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
T
o
o
Derated Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
1.67  
200  
W/ C  
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . I  
A
A
A
AS  
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
70  
S
SM  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
200  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
-55 to 150  
300  
C
J
STG  
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
(Distance >0.063in (1.6mm) from Case, 10s Max)  
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
o
Electrical Specifications T = 25 C, Unless Otherwise Specified  
C
PARAMETER  
Drain to Source Breakdown Voltage  
Gate Threshold Voltage  
SYMBOL  
BV  
TEST CONDITIONS  
= 1mA, V = 0V  
MIN  
TYP  
MAX  
-
UNITS  
V
I
100  
-
DSS  
D
GS  
o
V
V
= V  
= 1mA  
,
T
T
T
T
T
T
T
= -55 C  
-
-
5.0  
4.0  
-
V
GS(TH)  
GS  
DS  
C
C
C
C
C
C
C
I
o
D
= 25 C  
1.5  
-
V
o
= 125 C  
0.5  
-
-
V
o
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
I
V
V
= 80V,  
DS  
= 25 C  
-
25  
µA  
µA  
nA  
nA  
V
DSS  
= 0V  
o
GS  
= 125 C  
-
-
250  
100  
200  
1.62  
0.022  
0.034  
50  
o
I
V
= ±20V  
= 25 C  
-
-
GSS  
GS  
o
= 125 C  
-
-
Drain to Source On-State Voltage  
Drain to Source On Resistance  
V
V
= 12V, I = 70A  
-
-
DS(ON)  
GS  
D
o
r
I
= 46A,  
T
T
= 25 C  
-
0.017  
Ω
DS(ON)12  
D
C
C
V
= 12V  
o
GS  
= 125 C  
-
-
Ω
Turn-On Delay Time  
Rise Time  
t
V
R
R
= 50V, I = 70A,  
-
-
ns  
ns  
ns  
ns  
nC  
nC  
nC  
nC  
nC  
V
d(ON)  
DD  
D
= 0.70Ω, V = 12V,  
L
GS  
t
-
-
200  
95  
r
= 2.35Ω  
GS  
Turn-Off Delay Time  
Fall Time  
t
-
-
-
d(OFF)  
t
-
50  
f
Total Gate Charge  
Gate Charge at 12V  
Threshold Gate Charge  
Gate Charge Source  
Gate Charge Drain  
Plateau Voltage  
Q
V
= 0V to 20V  
= 0V to 12V  
= 0V to 2V  
V
= 50V,  
-
-
370  
230  
15  
g(TOT)  
GS  
DD  
= 70A  
I
D
Q
V
-
200  
-
g(12)  
g(TH)  
GS  
Q
V
-
GS  
Q
-
38  
102  
8
58  
gs  
gd  
Q
-
120  
-
V
I
= 70A, V  
= 15V  
-
(PLATEAU)  
D
DS  
= 25V, V = 0V,  
GS  
Input Capacitance  
C
V
-
4400  
1500  
585  
-
-
pF  
pF  
pF  
ISS  
DS  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Thermal Resistance Junction to Case  
C
C
-
-
OSS  
-
-
RSS  
o
R
-
0.6  
C/W  
JC  
θ
2
FSYC160D, FSYC160R  
Source to Drain Diode Specifications  
PARAMETER  
Forward Voltage  
Reverse Recovery Time  
SYMBOL  
TEST CONDITIONS  
MIN  
0.6  
-
TYP  
MAX  
1.8  
UNITS  
V
V
I
I
= 70A  
-
-
SD  
SD  
t
= 70A, dI /dt = 100A/µs  
620  
ns  
rr  
SD  
SD  
o
Electrical Specifications up to 100K RAD T = 25 C, Unless Otherwise Specified  
C
PARAMETER  
Drain to Source Breakdown Volts  
Gate to Source Threshold Volts  
Gate to Body Leakage  
SYMBOL  
BV  
TEST CONDITIONS  
= 0, I = 1mA  
MIN  
MAX  
-
UNITS  
(Note 3)  
V
100  
V
V
DSS  
GS  
D
(Note 3)  
V
V
= V , I = 1mA  
DS  
1.5  
4.0  
GS(TH)  
GS  
D
(Notes 2, 3)  
(Note 3)  
I
V
= ±20V, V  
= 0V  
-
-
-
-
100  
25  
nA  
µA  
V
GSS  
GS  
DS  
Zero-Gate Leakage  
I
V
= 0, V  
= 80V  
DSS  
GS DS  
Drain to Source On-State Volts  
Drain to Source On Resistance  
NOTES:  
(Notes 1, 3)  
(Notes 1, 3)  
V
V
= 12V, I = 70A  
1.62  
0.022  
DS(ON)  
GS  
D
r
V
= 12V, I = 46A  
Ω
DS(ON)12  
GS  
D
1. Pulse test, 300µs Max.  
2. Absolute value.  
3. Insitu Gamma bias must be sampled for both V  
GS  
= 12V, V  
DS  
= 0V and V  
GS  
= 0V, V  
= 80% BV  
.
DS  
DSS  
Single Event Effects (SEB, SEGR) Note 4  
ENVIRONMENT (NOTE 5)  
(NOTE 6)  
APPLIED  
MAXIMUM  
ION  
SPECIES  
TYPICAL LET  
(MeV/mg/cm)  
TYPICAL  
RANGE (µ)  
V
BIAS  
V
BIAS  
GS  
(V)  
DS  
(V)  
TEST  
SYMBOL  
Single Event Effects Safe Operating  
Area  
SEESOA  
Ni  
Br  
Br  
Br  
26  
37  
37  
37  
43  
36  
36  
36  
-20  
-10  
-15  
-20  
100  
100  
80  
50  
NOTES:  
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.  
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.  
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).  
Typical Performance Curves Unless Otherwise Specified  
2
LET = 26MeV/mg/cm , RANGE = 43µ  
LET = 37MeV/mg/cm , RANGE = 36µ  
2
1E-3  
1E-4  
120  
100  
80  
60  
40  
20  
0
2
FLUENCE = 1E5 IONS/cm (TYPICAL)  
ILM = 10A  
30A  
1E-5  
1E-6  
1E-7  
100A  
300A  
o
TEMP = 25 C  
10  
30  
100  
300  
1000  
0
-5  
-10  
-15  
(V)  
-20  
-25  
DRAIN SUPPLY (V)  
V
GS  
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA  
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT  
GAMMA DOT CURRENT TO I  
AS  
3
FSYC160D, FSYC160R  
Typical Performance Curves Unless Otherwise Specified (Continued)  
500  
100  
o
T
= 25 C  
C
90  
80  
100  
70  
60  
50  
100µs  
1ms  
40  
10  
30  
OPERATION IN THIS  
AREA MAY BE  
LIMITED BY r  
10ms  
20  
10  
DS(ON)  
0
-50  
1
0
T
50  
100  
o
150  
1
10  
100  
300  
, CASE TEMPERATURE ( C)  
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
C
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
TEMPERATURE  
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA  
2.5  
PULSE DURATION = 250ms, V  
GS  
= 12V, I = 46A  
D
2.0  
1.5  
1.0  
0.5  
0.0  
Q
Q
12V  
G
Q
GD  
GS  
V
G
CHARGE  
-80  
-40  
0
40  
80  
120  
160  
o
T , JUNCTION TEMPERATURE ( C)  
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM  
10  
FIGURE 6. NORMALIZED r vs JUNCTION TEMPERATURE  
DS(ON)  
1
0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
P
DM  
SINGLE PULSE  
0.01  
NOTES:  
DUTY FACTOR: D = t /t  
t
t
1
2
1
2
PEAK T = P  
J
x Z  
+ T  
C
DM  
θJC  
0.001  
-5  
10  
-4  
10  
-3  
-2  
-1  
10  
0
1
10  
10  
10  
10  
t, RECTANGULAR PULSE DURATION (s)  
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE  
4
FSYC160D, FSYC160R  
Typical Performance Curves Unless Otherwise Specified (Continued)  
500  
o
STARTING T = 25 C  
100  
J
o
STARTING T = 150 C  
J
IF R = 0  
t
= (L) (I ) / (1.3 RATED BV  
AS  
- V  
DSS DD  
)
AV  
IF R ≠ 0  
t
= (L/R) ln [(I *R) / (1.3 RATED BV  
- V ) + 1]  
DD  
AV  
AS  
DSS  
1
10  
0.01  
0.1  
10  
t
, TIME IN AVALANCHE (ms)  
AV  
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING  
Test Circuits and Waveforms  
ELECTRONIC SWITCH OPENS  
WHEN I IS REACHED  
AS  
V
DS  
L
BV  
DSS  
+
I
-
CURRENT  
TRANSFORMER  
AS  
t
P
V
DS  
I
AS  
V
VARY t TO OBTAIN  
DD  
P
+
50Ω  
REQUIRED PEAK I  
AS  
V
DD  
V
≤ 20V  
GS  
-
50V-150V  
DUT  
50Ω  
t
P
0V  
t
AV  
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT  
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS  
t
t
ON  
OFF  
t
D(OFF)  
V
DD  
t
D(ON)  
t
t
F
R
R
L
V
DS  
90%  
90%  
V
DS  
V
= 12V  
GS  
10%  
10%  
DUT  
0V  
90%  
50%  
R
GS  
50%  
V
GS  
PULSE WIDTH  
10%  
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT  
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS  
Screening Information  
5
FSYC160D, FSYC160R  
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).  
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified  
C
PARAMETER  
Gate to Source Leakage Current  
Zero Gate Voltage Drain Current  
On Resistance  
SYMBOL  
TEST CONDITIONS  
= ±20V  
GS  
MAX  
UNITS  
nA  
I
V
±20 (Note 7)  
±25 (Note 7)  
±20% (Note 8)  
±20% (Note 8)  
GSS  
I
V
= 80% Rated Value  
o
µA  
DSS  
DS  
r
T
= 25 C at Rated I  
D
Ω
DS(ON)  
C
Gate Threshold Voltage  
NOTES:  
V
I
= 1.0mA  
V
GS(TH)  
D
7. Or 100% of Initial Reading (whichever is greater).  
8. Of Initial Reading.  
Screening Information  
TEST  
JANTXV EQUIVALENT  
= 30V, t = 250µs  
JANS EQUIVALENT  
= 30V, t = 250µs  
Gate Stress  
V
V
GS  
Optional  
MIL-S-19500 Group A,  
GS  
Required  
MIL-S-19500 Group A,  
Pind  
Pre Burn-In Tests (Note 9)  
o
o
Subgroup 2 (All Static Tests at 25 C)  
Subgroup 2 (All Static Tests at 25 C)  
Steady State Gate  
Bias (Gate Stress)  
MIL-STD-750, Method 1042, Condition B  
MIL-STD-750, Method 1042, Condition B  
V
= 80% of Rated Value,  
V
= 80% of Rated Value,  
GS  
T = 150 C, Time = 48 hours  
GS  
T = 150 C, Time = 48 hours  
o
o
A
A
Interim Electrical Tests (Note 9)  
All Delta Parameters Listed in the Delta Tests All Delta Parameters Listed in the Delta Tests  
and Limits Table  
and Limits Table  
Steady State Reverse  
Bias (Drain Stress)  
MIL-STD-750, Method 1042, Condition A  
MIL-STD-750, Method 1042, Condition A  
V
= 80% of Rated Value,  
V
= 80% of Rated Value,  
DS  
DS  
o
o
T = 150 C, Time = 160 hours  
T = 150 C, Time = 240 hours  
A
A
PDA  
10%  
5%  
Final Electrical Tests (Note 9)  
MIL-S-19500, Group A, Subgroup 2  
MIL-S-19500, Group A,  
Subgroups 2 and 3  
NOTE:  
9. Test limits are identical pre and post burn-in.  
Additional Screening Tests  
PARAMETER  
Safe Operating Area  
SYMBOL  
SOA  
TEST CONDITIONS  
MAX  
5.5  
UNITS  
A
V
= 80V, t = 10ms  
DS  
Unclamped Inductive Switching  
Thermal Response  
I
V
= 15V, L = 0.1mH  
200  
55  
A
AS  
GS(PEAK)  
∆V  
∆V  
t
t
= 10ms; V = 25V; I = 4A  
mV  
mV  
SD  
SD  
H
H
H
Thermal Impedance  
= 500ms; V = 20V; I = 4A  
115  
H
H
H
(Heat Sink Required)  
6
FSYC160D, FSYC160R  
Rad Hard Data Packages - Intersil Power Transistors  
TXV Equivalent  
E. Preconditioning Attributes Data Sheet  
Hi-Rel Lot Traveler  
1. Rad Hard TXV Equivalent - Standard Data Package  
A. Certificate of Compliance  
HTRB - Hi Temp Gate Stress Post Reverse  
Bias Data and Delta Data  
HTRB - Hi Temp Drain Stress Post Reverse  
Bias Delta Data  
B. Assembly Flow Chart  
C. Preconditioning - Attributes Data Sheet  
F. Group A  
G. Group B  
H. Group C  
I. Group D  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
D. Group A  
E. Group B  
F. Group C  
G. Group D  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
2. Rad Hard Max. “S” Equivalent - Optional Data Package  
A. Certificate of Compliance  
2. Rad Hard TXV Equivalent - Optional Data Package  
A. Certificate of Compliance  
B. Serialization Records  
B. Assembly Flow Chart  
C. Assembly Flow Chart  
C. Preconditioning - Attributes Data Sheet  
- Precondition Lot Traveler  
- Pre and Post Burn-In Read and Record  
Data  
D. SEM Photos and Report  
E. Preconditioning - Attributes Data Sheet  
- Hi-Rel Lot Traveler  
D. Group A  
- Attributes Data Sheet  
- Group A Lot Traveler  
- HTRB - Hi Temp Gate Stress Post  
Reverse Bias Data and Delta Data  
- HTRB - Hi Temp Drain Stress Post  
Reverse Bias Delta Data  
E. Group B  
- Attributes Data Sheet  
- Group B Lot Traveler  
- X-Ray and X-Ray Report  
- Pre and Post Read and Record Data for  
Intermittent Operating Life (Subgroup B3)  
- Bond Strength Data (Subgroup B3)  
- Pre and Post High Temperature Operating  
Life Read and Record Data (Subgroup B6)  
F. Group A  
G. Group B  
H. Group C  
I. Group D  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Subgroups A2, A3, A4, A5 and A7 Data  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Subgroups B1, B3, B4, B5 and B6 Data  
F. Group C  
- Attributes Data Sheet  
- Group C Lot Traveler  
- Pre and Post Read and Record Data for  
Intermittent Operating Life (Subgroup C6)  
- Bond Strength Data (Subgroup C6)  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Subgroups C1, C2, C3 and C6 Data  
G. Group D  
- Attributes Data Sheet  
- Group D Lot Traveler  
- Pre and Post RAD Read and Record Data  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Pre and Post Radiation Data  
Class S - Equivalents  
1. Rad Hard “S” Equivalent - Standard Data Package  
A. Certificate of Compliance  
B. Serialization Records  
C. Assembly Flow Chart  
D. SEM Photos and Report  
7
FSYC160D, FSYC160R  
SMD-2  
3 PAD CERAMIC LEADLESS CHIP CARRIER  
INCHES  
MIN MAX  
MILLIMETERS  
E
SYMBOL  
MIN  
3.27  
MAX  
3.53  
NOTES  
A
b
0.129  
0.135  
0.520  
0.435  
0.115  
0.685  
0.470  
0.152  
0.139  
0.145  
0.530  
0.445  
0.125  
0.695  
0.480  
0.162  
-
-
-
-
-
-
-
-
3.43  
3.68  
D
13.20  
11.05  
2.92  
13.46  
11.30  
3.17  
D
D
1
2
D
E
17.40  
11.94  
3.86  
17.65  
12.19  
4.11  
E
E
1
2
NOTES:  
1. No current JEDEC outline for this package.  
2. Controlling dimension: INCH.  
3. Revision 2 dated 6-98.  
A
E
2
E
1
2
1
D
2
3
D
1
b
1 - GATE  
2 - SOURCE  
3 - DRAIN  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.  
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-  
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
Taiwan Limited  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (407) 724-7000  
FAX: (407) 724-7240  
8

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