FSYC163R [INTERSIL]
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs; 抗辐射,抗SEGR N沟道功率MOSFET型号: | FSYC163R |
厂家: | INTERSIL CORPORATION |
描述: | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
文件: | 总8页 (文件大小:65K) |
下载: | 下载PDF数据表文档文件 |
FSYC163R1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
INTERSIL
FSYC163R1
Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FAIRCHILD
FSYC163R3
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
INTERSIL
FSYC163R3
Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FAIRCHILD
FSYC163R4
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
INTERSIL
FSYC163R4
Power Field-Effect Transistor, 62A I(D), 130V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FAIRCHILD
FSYC260D
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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19
INTERSIL
FSYC260D1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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7
INTERSIL
FSYC260D3
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
INTERSIL
FSYC260R
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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13
INTERSIL
FSYC260R1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
INTERSIL
FSYC260R3
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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7
INTERSIL
FSYC260R4
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
INTERSIL
FSYC264D
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
INTERSIL
FSYC264D1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
INTERSIL
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