FSYE430R4 [INTERSIL]
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs; 抗辐射,抗SEGR N沟道功率MOSFET型号: | FSYE430R4 |
厂家: | Intersil |
描述: | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
文件: | 总8页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FSYE430D, FSYE430R
Data Sheet
June 1999
File Number 4750
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 3A, 500V, r
• Total Dose
= 2.70Ω
DS(ON)
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
V
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS
GS
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 8nA Per-RAD(Si)/s Typically
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
• Neutron
- Maintain Pre-RAD Specifications
for 3E12 Neutrons/cm
2
2
- Usable to 3E13 Neutrons/cm
Symbol
D
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
G
S
Ordering Information
Packaging
SMD.5
PART
RAD LEVEL SCREENING LEVEL
NUMBER/BRAND
10K
Commercial
TXV
FSYE430D1
10K
FSYE430D3
FSYE430R1
FSYE430R3
FSYE430R4
100K
100K
100K
Commercial
TXV
Space
Formerly available as type TA17639.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
FSYE430D, FSYE430R
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
FSYE430D, FSYE430R
UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
500
500
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
3
2
A
A
A
V
C
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
9
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Maximum Power Dissipation
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
42
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
17
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
0.33
W/ C
9
A
A
A
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
3
9
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
300
C
J
STG
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
500
-
DSS
D
GS
o
V
V
= V
DS
,
T
T
T
T
T
T
T
= -55 C
-
-
5.0
4.0
-
V
GS(TH)
GS
= 1mA
C
C
C
C
C
C
C
I
o
D
= 25 C
1.5
-
V
o
= 125 C
0.5
-
-
V
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
V
V
= 400V,
= 0V
= 25 C
-
25
250
100
200
8.51
2.70
4.80
20
20
45
25
51
35
2.1
8.0
19
-
µA
µA
nA
nA
V
DSS
DS
GS
o
= 125 C
-
-
o
I
V
= ±20V
= 25 C
-
-
GSS
GS
o
= 125 C
-
-
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
= 12V, I = 3A
-
DS(ON)
GS
D
o
r
I
= 2A,
T
T
= 25 C
-
1.9
-
Ω
DS(ON)12
D
C
V
= 12V
o
GS
= 125 C
-
Ω
C
Turn-On Delay Time
Rise Time
t
V
R
R
= 250V, I = 3A,
-
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 83.3Ω, V = 12V,
L
GS
t
-
-
r
= 7.5Ω
GS
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
-
-
f
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Q
V
= 0V to 20V
= 0V to 12V
= 0V to 2V
V
= 250V,
-
-
g(TOT)
GS
DD
= 3A
I
D
Q
V
-
30
-
g(12)
g(TH)
GS
Q
V
-
GS
Q
-
6.3
14
7
gs
gd
Q
-
V
I
= 3A, V
= 15V
-
(PLATEAU)
D
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
V
= 25V, V = 0V,
GS
-
800
120
20
-
-
pF
pF
pF
ISS
DS
f = 1MHz
C
C
-
-
OSS
-
-
RSS
o
Thermal Resistance Junction to Case
R
-
3.0
C/W
JC
θ
4-2
FSYE430D, FSYE430R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
0.6
-
TYP
MAX
1.8
UNITS
V
V
I
I
= 3A
-
-
SD
SD
t
= 3A, dI /dt = 100A/µs
380
ns
rr
SD
SD
o
Electrical Specifications up to 100K RAD T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
SYMBOL
BV
TEST CONDITIONS
= 0, I = 1mA
MIN
MAX
-
UNITS
(Note 3)
V
500
V
V
DSS
GS
D
(Note 3)
V
V
= V , I = 1mA
DS
1.5
4.0
100
25
GS(TH)
GS
D
(Notes 2, 3)
(Note 3)
I
V
= ±20V, V
= 0V
= 400V
-
-
-
-
nA
µA
V
GSS
GS DS
Zero Gate Leakage
I
V
= 0, V
DSS
GS
DS
= 12V, I = 3A
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
(Notes 1, 3)
(Notes 1, 3)
V
V
4.80
2.70
DS(ON)
GS
D
r
V
= 12V, I = 2A
Ω
DS(ON)12
GS
D
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
= 80% BV .
DSS
DS
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
APPLIED
(NOTE 6)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
V
BIAS
MAXIMUM
GS
(V)
TEST
SYMBOL
SEESOA
V
BIAS (V)
DS
Single Event Effects Safe Operating Area
Ni
Ni
Br
Br
Br
26
26
37
37
37
43
43
36
36
36
-15
-20
-5
500
450
500
-10
-15
400
100
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
2
1E-3
1E-4
1E-5
LET = 26MeV/mg/cm , RANGE = 43µ
2
LET = 37MeV/mg/cm , RANGE = 36µ
600
500
400
300
200
100
0
2
FLUENCE = 1E5 IONS/cm (TYPICAL)
ILM = 10A
30A
100A
300A
1E-6
o
TEMP = 25 C
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-5
-10
-15
-20
-25
V
(V)
GS
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
4-3
FSYE430D, FSYE430R
Typical Performance Curves Unless Otherwise Specified (Continued)
4.0
3.0
2.0
1.0
0
30
10
o
T
= 25 C
C
100µs
1
0.1
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.01
1
10
100
1000
-50
0
50
100
150
o
V
, DRAIN-TO-SOURCE VOLTAGE (V)
T
, CASE TEMPERATURE ( C)
DS
C
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms,V
GS
= 12V, I = 2A
D
2.0
1.5
1.0
0.5
0.0
Q
Q
12V
G
Q
GD
GS
V
G
-80
-40
0
40
80
120
160
CHARGE
o
T , JUNCTION TEMPERATURE ( C)
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
SINGLE PULSE
0.01
NOTES:
DUTY FACTOR: D = t /t
t
t
1
2
1
2
PEAK T = P
x Z
+ T
J
DM
θJC
C
0.001
-5
-4
10
-3
-2
10
-1
10
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4-4
FSYE430D, FSYE430R
Typical Performance Curves Unless Otherwise Specified (Continued)
10
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
1
IF R = 0
t
= (L) (I ) / (1.3 RATED BV
- V )
DD
AV
IF R ≠ 0
= (L/R) ln [(I *R) /
AS
DSS
t
AV
(1.3 RATED BV
AS
- V ) + 1]
DSS
DD
0.1
0.01
0.1
1
10
t
, TIME IN AVALANCHE (ms)
AV
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
BV
DSS
+
I
-
CURRENT
TRANSFORMER
AS
t
P
V
DS
I
AS
V
VARY t TO OBTAIN
DD
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
V
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4-5
FSYE430D, FSYE430R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table)
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
TEST CONDITIONS
= ±20V
GS
MAX
UNITS
nA
I
V
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
GSS
I
V
= 80% Rated Value
o
µA
DSS
DS
r
T
= 25 C at Rated I
D
Ω
DS(ON)
C
V
I
= 1.0mA
V
GS(TH)
D
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
= 30V, t = 250µs
JANS EQUIVALENT
= 30V, t = 250µs
Gate Stress
V
V
GS
GS
Optional
MIL-S-19500 Group A,
Pind
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25 C)
o
o
Subgroup 2 (All Static Tests at 25 C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
MIL-STD-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
GS
o
o
T = 150 C, Time = 48 hours
T = 150 C, Time = 48 hours
A
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
MIL-STD-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
DS
o
o
T = 150 C, Time = 160 hours
T = 150 C, Time = 240 hours
A
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
Safe Operating Area
SYMBOL
TEST CONDITIONS
= 200V, t = 10ms
MAX
0.47
9
UNITS
A
SOA
V
DS
Unclamped Inductive Switching
Thermal Response
I
V
= 15V, L = 0.1mH
A
AS
GS(PEAK)
∆V
t
t
= 10ms; V = 25V; I = 1A
74
mV
mV
SD
SD
H
H
H
Thermal Impedance
∆V
= 100ms; V = 25V; I = 1A
165
H
H
H
4-6
FSYE430D, FSYE430R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group C
G. Group D
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- X-Ray and X-Ray Report
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
4-7
FSYE430D, FSYE430R
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
MIN
MILLIMETERS
E
SYMBOL
MAX
0.118
0.100
0.301
0.291
0.155
0.405
0.230
0.130
MIN
2.74
2.28
7.39
7.13
3.68
10.03
5.58
3.04
MAX
2.99
2.54
7.64
7.39
3.93
10.28
5.84
3.30
NOTES
A
b
0.108
0.090
0.291
0.281
0.145
0.395
0.220
0.120
-
-
-
-
-
-
-
-
D
D
D
D
1
2
E
E
E
1
2
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: Inch.
A
3. Revision 1 dated 3-99.
E
E
2
1
2
D
2
3
D
1
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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4-8
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