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FSYE913A0D1 [INTERSIL]

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs; 抗辐射，抗SEGR P沟道功率MOSFET
FSYE913A0D1
型号： FSYE913A0D1
厂家： Intersil    Intersil
描述：

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
抗辐射，抗SEGR P沟道功率MOSFET

晶体 晶体管 开关 脉冲
文件： 总9页 (文件大小：76K)
中文：  中文翻译
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FSYE913A0D, FSYE913A0R  
Data Sheet  
February 2000  
File Number 4744  
Radiation Hardened, SEGR Resistant  
P-Channel Power MOSFETs  
Features  
• 9A, -100V, r  
= 0.280Ω  
DS(ON)  
The Discrete Products Operation of Intersil Corporation has  
developed a series of Radiation Hardened MOSFETs  
specifically designed for commercial and military space  
applications. Enhanced Power MOSFET immunity to Single  
Event Effects (SEE), Single Event Gate Rupture (SEGR) in  
particular, is combined with 100K RADS of total dose  
hardness to provide devices which are ideally suited to harsh  
space environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
• Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
- 1.5nA Per-RAD(Si)/s Typically  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3E13 Neutrons/cm  
2
2
- Usable to 3E14 Neutrons/cm  
Symbol  
D
G
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil Corporation for any desired  
deviations from the data sheet.  
S
Packaging  
SMD.5  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSYE913A0D1  
FSYE913A0D3  
FSYE913A0R1  
FSYE913A0R3  
FSYE913A0R4  
10K  
100K  
100K  
100K  
Commercial  
TXV  
Space  
Formerly available as type TA17796.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
FSYE913A0D, FSYE913A0R  
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified  
C
FSYE913A0D, FSYE913A0R  
UNITS  
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
-100  
-100  
V
V
DS  
Drain to Gate Voltage (R  
GS  
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
DGR  
Continuous Drain Current  
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
9
5
A
A
A
V
C
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
C
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
27  
±20  
DM  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
Maximum Power Dissipation  
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
42  
17  
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I  
0.33  
27  
W/ C  
A
A
A
AS  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
9
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
27  
SM  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
-55 to 150  
300  
C
J
STG  
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
(Distance >0.063in (1.6mm) from Case, 10s Max)  
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
o
Electrical Specifications  
T
= 25 C, Unless Otherwise Specified  
C
PARAMETER  
SYMBOL  
BV  
TEST CONDITIONS  
= 1mA, V = 0V  
MIN  
TYP  
MAX  
-
UNITS  
V
Drain to Source Breakdown Voltage  
Gate Threshold Voltage  
I
-100  
-
-
-
-
-
-
-
DSS  
D
GS  
o
V
V
= V  
DS  
,
T
T
T
T
T
T
T
= -55 C  
-
-7.0  
-6.0  
-
V
GS(TH)  
GS  
= 1mA  
C
C
C
C
C
C
C
I
o
D
= 25 C  
-2.0  
V
o
= 125 C  
-1.0  
V
o
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
I
V
V
= -80V,  
= 0V  
= 25 C  
-
-
-
25  
µA  
µA  
nA  
nA  
V
DSS  
DS  
GS  
o
= 125 C  
250  
100  
200  
-3.02  
0.280  
0.440  
20  
o
I
V
= ±20V  
= 25 C  
GSS  
GS  
o
= 125 C  
Drain to Source On-State Voltage  
Drain to Source On Resistance  
V
V
= -12V, I = 9A  
D
DS(ON)  
GS  
o
r
I
= 5A,  
T
T
= 25 C  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.190  
Ω
DS(ON)12  
D
C
V
= -12V  
o
GS  
= 125 C  
-
-
Ω
C
Turn-On Delay Time  
Rise Time  
t
V
R
R
= -50V, I = 9A,  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
nC  
nC  
V
d(ON)  
DD  
D
= 5.6Ω, V = -12V,  
L
GS  
t
-
40  
r
= 7.5Ω  
GS  
Turn-Off Delay Time  
Fall Time  
t
-
40  
d(OFF)  
t
-
35  
f
Total Gate Charge  
Gate Charge at 12V  
Threshold Gate Charge  
Gate Charge Source  
Gate Charge Drain  
Plateau Voltage  
Q
V
= 0V to -20V  
= 0V to -12V  
= 0V to -2V  
V
= -50V,  
-
61  
g(TOT)  
GS  
DD  
= 9A  
I
D
Q
V
36  
-
41  
g(12)  
g(TH)  
GS  
Q
V
2.4  
7.8  
20  
GS  
Q
6.6  
17  
-7  
945  
315  
100  
-
gs  
gd  
Q
V
I
= 9A, V  
= -15V  
-
(PLATEAU)  
D
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
V
= -25V, V = 0V,  
GS  
-
pF  
pF  
pF  
ISS  
DS  
f = 1MHz  
C
C
-
OSS  
RSS  
-
o
Thermal Resistance Junction to Case  
R
3.0  
C/W  
JC  
θ
2
FSYE913A0D, FSYE913A0R  
Source to Drain Diode Specifications  
PARAMETER  
Forward Voltage  
Reverse Recovery Time  
SYMBOL  
TEST CONDITIONS  
MIN  
-0.6  
-
TYP  
MAX  
-1.8  
170  
UNITS  
V
V
I
I
= 9A  
-
-
SD  
SD  
t
= 9A, dI /dt = 100A/µs  
ns  
rr  
SD  
SD  
o
Electrical Specifications up to 100K RAD T = 25 C, Unless Otherwise Specified  
C
PARAMETER  
Drain to Source Breakdown Volts  
Gate to Source Threshold Volts  
Gate to Body Leakage  
SYMBOL  
BV  
TEST CONDITIONS  
= 0, I = 1mA  
MIN  
MAX  
-
UNITS  
(Note 3)  
V
-100  
V
V
DSS  
GS  
D
(Note 3)  
V
V
= V , I = 1mA  
DS  
-2.0  
-6.0  
100  
25  
GS(TH)  
GS  
D
(Notes 2, 3)  
(Note 3)  
I
V
= ±20V, V  
= 0V  
-
-
-
-
nA  
µA  
V
GSS  
GS  
DS  
Zero Gate Leakage  
I
V
= 0, V  
= -80V  
DSS  
GS DS  
Drain to Source On-State Volts  
Drain to Source On Resistance  
NOTES:  
(Notes 1, 3)  
(Notes 1, 3)  
V
V
= -12V, I = 9A  
-3.02  
0.280  
DS(ON)  
GS  
D
r
V
= -12V, I = 5A  
Ω
DS(ON)12  
GS  
D
1. Pulse test, 300µs Max.  
2. Absolute value.  
3. Insitu Gamma bias must be sampled for both V  
GS  
= -12V, V  
= 0V and V  
GS  
= 0V, V  
= 80% BV  
DSS  
.
DS  
DS  
Single Event Effects (SEB, SEGR) Note 4  
ENVIRONMENT (NOTE 5)  
APPLIED  
(NOTE 6)  
ION  
SPECIES  
TYPICAL LET  
(MeV/mg/cm)  
TYPICAL  
RANGE (µ)  
V
BIAS  
MAXIMUM  
GS  
(V)  
TEST  
SYMBOL  
SEESOA  
V
BIAS (V)  
-100  
-100  
-80  
DS  
Single Event Effects Safe Operating Area  
Ni  
Br  
Br  
Br  
26  
37  
37  
37  
43  
36  
36  
36  
20  
10  
15  
20  
-50  
NOTES:  
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.  
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.  
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).  
Typical Performance Curves Unless Otherwise Specified  
2
2
LET = 26MeV/mg/cm , RANGE = 43µ  
1E-3  
1E-4  
1E-5  
LET = 37MeV/mg/cm , RANGE = 36µ  
-120  
-100  
-80  
-60  
-40  
-20  
0
2
FLUENCE = 1E5 IONS/cm (TYPICAL)  
ILM = 10A  
30A  
100A  
300A  
1E-6  
1E-7  
o
TEMP = 25 C  
-10  
-30  
-100  
DRAIN SUPPLY (V)  
-300  
-1000  
0
5
10  
15  
20  
25  
V
(V)  
GS  
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA  
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT  
GAMMA DOT CURRENT TO I  
AS  
3
FSYE913A0D, FSYE913A0R  
Typical Performance Curves Unless Otherwise Specified (Continued)  
12  
100  
o
T
= 25 C  
C
10  
8
100µs  
10  
6
1ms  
4
10ms  
1
OPERATION IN THIS  
AREA MAY BE  
LIMITED BY r  
2
0
DS(ON)  
0.1  
-1  
-10  
-100  
-300  
-50  
0
50  
100  
o
150  
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
T , CASE TEMPERATURE ( C)  
C
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
TEMPERATURE  
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA  
2.5  
PULSE DURATION = 250ms, V  
GS  
= -12V, I = 5A  
D
2.0  
1.5  
1.0  
0.5  
0.0  
Q
Q
-12V  
G
Q
GD  
GS  
V
G
CHARGE  
BASIC GATE CHARGE WAVEFORM  
-80  
-40  
0
40  
80  
120  
160  
o
T , JUNCTION TEMPERATURE ( C)  
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM  
10  
FIGURE 6. NORMALIZED r vs JUNCTION TEMPERATURE  
DS(ON)  
1
0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
P
DM  
SINGLE PULSE  
0.01  
NOTES:  
DUTY FACTOR: D = t /t  
t
t
1
2
+ T  
1
2
PEAK T = P  
x Z  
J
DM  
JC  
C
θ
0.001  
-5  
-4  
-3  
10  
-2  
-1  
0
1
10  
10  
10  
10  
10  
10  
t, RECTANGULAR PULSE DURATION (s)  
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE  
4
FSYE913A0D, FSYE913A0R  
Typical Performance Curves Unless Otherwise Specified (Continued)  
40  
o
STARTING T = 25 C  
J
10  
o
STARTING T = 150 C  
J
IF R = 0  
t
= (L) (I ) / (1.3 RATED BV  
AS DSS  
- V )  
DD  
AV  
IF R ≠ 0  
= (L/R) ln [(I *R) / (1.3 RATED BV  
t
- V ) + 1]  
DD  
AV  
AS DSS  
1
0.01  
0.1  
1
10  
t
, TIME IN AVALANCHE (ms)  
AV  
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING  
Test Circuits and Waveforms  
ELECTRONIC SWITCH OPENS  
WHEN I IS REACHED  
AS  
V
DS  
L
BV  
DSS  
+
I
-
CURRENT  
TRANSFORMER  
AS  
t
P
V
DS  
I
AS  
V
VARY t TO OBTAIN  
DD  
+
P
50Ω  
REQUIRED PEAK I  
AS  
V
DD  
0V  
-
t
P
50V-150V  
DUT  
50Ω  
V
≤ 20V  
GS  
t
AV  
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT  
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS  
t
t
ON  
OFF  
t
d(OFF)  
V
DD  
t
d(ON)  
t
t
f
r
R
L
V
DS  
90%  
90%  
V
DS  
0V  
10%  
10%  
DUT  
90%  
50%  
V
= -12V  
GS  
R
GS  
50%  
V
GS  
PULSE WIDTH  
10%  
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT  
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS  
5
FSYE913A0D, FSYE913A0R  
Screening Information  
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).  
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified  
C
PARAMETER  
Gate to Source Leakage Current  
Zero Gate Voltage Drain Current  
Drain to Source On Resistance  
Gate Threshold Voltage  
NOTES:  
SYMBOL  
TEST CONDITIONS  
= ±20V  
GS  
MAX  
UNITS  
nA  
I
V
±20 (Note 7)  
±25 (Note 7)  
±20% (Note 8)  
±20% (Note 8)  
GSS  
I
V
= 80% Rated Value  
o
µA  
DSS  
DS  
r
T
= 125 C at Rated I  
D
Ω
DS(ON)  
C
V
I
= 1.0mA  
V
GS(TH)  
D
7. Or 100% of Initial Reading (whichever is greater).  
8. Of Initial Reading.  
Screening Information  
TEST  
JANTXV EQUIVALENT  
= -30V, t = 250µs  
JANS EQUIVALENT  
= -30V, t = 250µs  
Gate Stress  
V
V
GS  
GS  
Optional  
MIL-S-19500 Group A,  
Pind  
Required  
Pre Burn-In Tests (Note 9)  
MIL-S-19500 Group A,  
Subgroup 2 (All Static Tests at 25 C)  
o
o
Subgroup 2 (All Static Tests at 25 C)  
Steady State Gate  
Bias (Gate Stress)  
MIL-STD-750, Method 1042, Condition B  
MIL-STD-750, Method 1042, Condition B  
V
= 80% of Rated Value,  
V
= 80% of Rated Value,  
GS  
GS  
o
o
T = 150 C, Time = 48 hours  
T = 150 C, Time = 48 hours  
A
A
Interim Electrical Tests (Note 9)  
All Delta Parameters Listed in the Delta Tests  
and Limits Table  
All Delta Parameters Listed in the Delta Tests  
and Limits Table  
Steady State Reverse  
Bias (Drain Stress)  
MIL-STD-750, Method 1042, Condition A  
MIL-STD-750, Method 1042, Condition A  
V
= 80% of Rated Value,  
V
= 80% of Rated Value,  
DS  
DS  
o
o
T = 150 C, Time = 160 hours  
T = 150 C, Time = 240 hours  
A
A
PDA  
10%  
5%  
Final Electrical Tests (Note 9)  
MIL-S-19500, Group A, Subgroup 2  
MIL-S-19500, Group A,  
Subgroups 2 and 3  
NOTE:  
9. Test limits are identical pre and post burn-in.  
Additional Screening Tests  
PARAMETER  
Safe Operating Area  
SYMBOL  
TEST CONDITIONS  
= -80V, t = 10ms  
MAX  
1.2  
27  
UNITS  
A
SOA  
V
DS  
Unclamped Inductive Switching  
Thermal Response  
I
V
= -15V, L = 0.1mH  
A
AS  
GS(PEAK)  
∆V  
t
t
= 10ms; V = -25V; I = 1A  
74  
mV  
mV  
SD  
SD  
H
H
H
Thermal Impedance  
∆V  
= 100ms; V = -25V; I = 1A  
165  
H
H
H
6
FSYE913A0D, FSYE913A0R  
Rad Hard Data Packages - Intersil Power Transistors  
TXV Equivalent  
Class S - Equivalents  
1. RAD HARD TXV EQUIVALENT - STANDARD DATA  
PACKAGE  
1. RAD HARD “S” EQUIVALENT - STANDARD DATA  
PACKAGE  
A. Certificate of Compliance  
A. Certificate of Compliance  
B. Serialization Records  
C. Assembly Flow Chart  
D. SEM Photos and Report  
B. Assembly Flow Chart  
C. Preconditioning - Attributes Data Sheet  
D. Group A  
E. Group B  
F. Group C  
G. Group D  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
E. Preconditioning - Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- HTRB - Hi Temp Gate Stress Post  
Reverse Bias Data and Delta Data  
- HTRB - Hi Temp Drain Stress Post  
Reverse Bias Delta Data  
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA  
PACKAGE  
F. Group A  
G. Group B  
H. Group C  
I. Group D  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
- Attributes Data Sheet  
A. Certificate of Compliance  
B. Assembly Flow Chart  
C. Preconditioning - Attributes Data Sheet  
- Precondition Lot Traveler  
- Pre and Post Burn-In Read and Record  
Data  
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL  
DATA PACKAGE  
D. Group A  
- Attributes Data Sheet  
- Group A Lot Traveler  
A. Certificate of Compliance  
B. Serialization Records  
C. Assembly Flow Chart  
D. SEM Photos and Report  
E. Group B  
- Attributes Data Sheet  
- Group B Lot Traveler  
- Pre and Post Read and Record Data for  
Intermittent Operating Life (Subgroup B3)  
- Bond Strength Data (Subgroup B3)  
- Pre and Post High Temperature Operating  
Life Read and Record Data (Subgroup B6)  
E. Preconditioning - Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- HTRB - Hi Temp Gate Stress Post  
Reverse Bias Data and Delta Data  
- HTRB - Hi Temp Drain Stress Post  
Reverse Bias Delta Data  
F. Group C  
G. Group D  
- Attributes Data Sheet  
- Group C Lot Traveler  
- Pre and Post Read and Record Data for  
Intermittent Operating Life (Subgroup C6)  
- Bond Strength Data (Subgroup C6)  
- X-Ray and X-Ray Report  
F. Group A  
G. Group B  
H. Group C  
I. Group D  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Subgroups A2, A3, A4, A5 and A7 Data  
- Attributes Data Sheet  
- Group D Lot Traveler  
- Pre and Post RAD Read and Record Data  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Subgroups B1, B3, B4, B5 and B6 Data  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Subgroups C1, C2, C3 and C6 Data  
- Attributes Data Sheet  
- Hi-Rel Lot Traveler  
- Pre and Post Radiation Data  
7
FSYE913A0D, FSYE913A0R  
SMD.5  
3 PAD CERAMIC LEADLESS CHIP CARRIER  
INCHES  
MIN MAX  
MILLIMETERS  
E
SYMBOL  
MIN  
2.74  
2.28  
7.39  
7.13  
1.78  
10.03  
5.58  
3.04  
MAX  
2.99  
2.54  
7.64  
7.39  
2.03  
10.28  
5.84  
3.30  
NOTES  
A
b
0.108  
0.090  
0.291  
0.281  
0.070  
0.395  
0.220  
0.120  
0.118  
0.100  
0.301  
0.291  
0.080  
0.405  
0.230  
0.130  
-
-
-
-
-
-
-
-
D
D
D
D
1
2
E
E
E
1
2
NOTES:  
1. No current JEDEC outline for this package.  
2. Controlling dimension: Inch.  
A
3. Revision 2 dated 11-99.  
E
E
2
1
2
D
2
3
D
1
1
b
1 - GATE  
2 - SOURCE  
3 - DRAIN  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (321) 724-7000  
FAX: (321) 724-7240  
8
FSYE913A0D, FSYE913A0R  
9

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