HA-5222/883 [INTERSIL]
Dual, Low Noise, Wideband, Precision Operational Amplifier; 双通道，低噪声，宽带，精密运算放大器
| 型号： | HA-5222/883 |
| 厂家： | 
Intersil |
| 描述： | Dual, Low Noise, Wideband, Precision Operational Amplifier |
| 文件： | 总8页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA-5222/883
Dual, Low Noise, Wideband,
Precision Operational Amplifier
January 1996
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HA-5222/883 is a dual, high performance, dielectrically
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
isolated, monolithic op amp, featuring precision DC charac-
teristics while providing excellent AC characteristics.
Designed for audio, video, and other demanding applica-
tions, noise (3.3nV/√Hz at 1kHz typ), total harmonic distor-
tion (<0.005% typ), and DC errors are kept to a minimum.
• Gain Bandwidth Product. . . . . . . . . . . . . 100MHz (Min)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . 30MHz (Min)
40MHz (Typ)
The precision performance is shown by low offset voltage
(0.3mV typ), low bias currents (40nA typ), low offset cur-
rents (15nA typ), and high open loop gain (128dB typ). The
combination of these excellent DC characteristics with fast
settling time (0.4µs typ) make the HA-5222/883 ideally
suited for precision signal conditioning.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . 25V/µs (Min)
37V/µs (Typ)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . 0.75mV (Max)
0.30mV (Typ)
• High Open Loop Gain . . . . . . . . . . . . . . . . .106dB (Min)
128dB (Typ)
The unique design of the HA-5222/883 gives this device out-
standing AC characteristics, including high unity gain band-
width (40MHz typ) and high slew rate (37V/µs typ), not
normally associated with precision op amps. Other key spec-
ifications include high CMRR (95dB typ) and high PSRR
• Channel Separation (at 10kHz) . . . . . . . . . .110dB (Typ)
• Low Voltage Noise (at 1kHz) . . . . . . . . 5.9nV/√Hz (Max)
3.3nV/√Hz (Typ)
• Low Current Noise (at 1kHz). . . . . . . . 2.7pA/√Hz (Max) (100dB typ). The combination of these specifications will
1.3pA/√Hz (Typ)
allow the HA-5222/883 to be used in RF signal conditioning
as well as video amplifiers.
• High Output Current . . . . . . . . . . . . . . . . . ±30mA (Min)
±56mA (Typ)
• Low Supply Current (per Op Amp.) . . . . . . 10mA (Max)
8mA (Typ)
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
Applications
o
o
• Precision Test Systems
• Active Filtering
HA7-5222/883
-55 C to +125 C
8 Lead CerDIP
• Small Signal Video
• Accurate Signal Processing
• RF Signal Conditioning
Pinout
HA-5222/883
(CERDIP)
TOP VIEW
OUT1
-IN1
+IN1
V-
1
2
3
4
8
7
6
5
V+
OUT2
-IN2
+IN2
1
-
+
2
-
+
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 511062-883
File Number 3717.1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-169
Specifications HA-5222/883
Absolute Maximum Ratings
Thermal Information (Typical)
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V- Package Power Dissipation Limit at +75 C
Thermal Resistance
CerDIP Package . . . . . . . . . . . . . . . . . . .
θ
θ
JC
16 C/W
JA
o
o
96 C/W
o
Peak Output Current (Pulsed at 1ms, 10% Duty Cycle). . . . .100mA
Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.04W
o
Package Power Dissipation Derating Factor Above +75 C
o
o
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.4mW/ C
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C
V
≤ 1/2 (V+ - V-)
INCM
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V
R ≥ 1kΩ
L
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
= ±15V, R
= 1kΩ, V = 0V, Unless Otherwise Specified.
OUT
SUPPLY
LOAD
LIMITS
MIN
GROUP A
SUBGROUPS TEMPERATURE
PARAMETERS
SYMBOL
CONDITIONS
MAX
0.75
1.5
UNITS
mV
o
Input Offset Voltage
V
V
V
= 0V
1
+25 C
-0.75
-1.5
-80
IO
CM
CM
o
o
2, 3
1
+125 C, -55 C
mV
o
Input Bias Current
+I
= 0V,
+25 C
80
nA
B
+R = 100.1kΩ,
S
o
o
2, 3
+125 C, -55 C
-200
200
nA
-R = 100Ω
S
o
-I
V
= 0V, +R = 100Ω,
1
+25 C
-80
-200
-50
80
200
50
nA
nA
nA
nA
B
CM
S
-R = 100.1kΩ
S
o
o
2, 3
1
+125 C, -55 C
o
Input Offset Current
I
V
= 0V,
CM
+25 C
IO
+R = 100.1kΩ,
-R = 100.1kΩ
S
o
o
2, 3
+125 C, -55 C
-150
150
S
o
Common Mode Range
+CMR
-CMR
V+ = +3V, V- = -27V
V+ = +27V, V- = -3V
1
2, 3
1
+25 C
12
12
-
-
V
V
o
o
+125 C, -55 C
-
o
+25 C
-12
V
o
o
2, 3
4
+125 C, -55 C
-
-12
V
o
Large Signal Voltage
Gain
+A
V
V
= 0V and +10V
= 0V and -10V
= +10V,
+25 C
106
100
106
100
88
86
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
VOL
OUT
o
o
5, 6
4
+125 C, -55 C
o
-A
+25 C
VOL
OUT
o
o
5, 6
1
+125 C, -55 C
o
Common Mode
Rejection Ratio
+CMRR
∆V
+25 C
CM
V+ = +5V, V- = -25V,
o
o
2, 3
+125 C, -55 C
V
= -10V
OUT
o
-CMRR
∆V
= -10V,
1
+25 C
88
86
-
-
dB
dB
CM
V+ = +25V, V- = -5V,
= +10V
o
o
2, 3
+125 C, -55 C
V
OUT
o
Output Voltage Swing
+V
R = 1kΩ
4
+25 C
12.0
-
V
V
V
V
OUT
L
o
o
5, 6
4
+125 C, -55 C
11.5
-
o
-V
R = 1kΩ
+25 C
-
-
-12.0
-11.5
OUT
L
o
o
5, 6
+125 C, -55 C
Spec Number 511062-883
3-170
Specifications HA-5222/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±15V, R
= 1kΩ, V = 0V, Unless Otherwise Specified.
OUT
SUPPLY
LOAD
LIMITS
GROUP A
PARAMETERS
Output Current
SYMBOL
CONDITIONS
= +10V, R = 1kΩ
SUBGROUPS TEMPERATURE
MIN
MAX
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
o
+I
V
V
V
V
4
5, 6
4
+25 C
30
30
-
-
-
OUT
OUT
OUT
OUT
OUT
L
o
o
+125 C, -55 C
o
-I
= -10V, R = 1kΩ
+25 C
-30
-30
20
22
-
OUT
L
o
o
5, 6
1
+125 C, -55 C
-
o
Quiescent Power Supply
Current
+I
= 0V, I
= 0V, I
= 0mA
= 0mA
+25 C
-
CC
OUT
OUT
o
o
2, 3
1
+125 C, -55 C
-
o
-I
+25 C
-20
-22
90
86
CC
o
o
2, 3
1
+125 C, -55 C
-
o
Power Supply
Rejection Ratio
+PSRR
-PSRR
∆V
= 10V,
+25 C
-
SUP
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
o
o
2, 3
+125 C, -55 C
-
dB
o
∆V
= 10V,
1
+25 C
90
86
-
-
dB
dB
SUP
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
o
o
2, 3
+125 C, -55 C
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC
= ±15V, R = 1kΩ, Unless Otherwise Specified.
Device Characterized at: V
SUPPLY
LOAD
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
= 0Ω, f = 10Hz
NOTES
1, 5
1, 5
1, 5
1, 5
1, 5
1, 5
1
TEMPERATURE
MIN
MAX
16.0
6.6
5.9
24.0
6.6
2.7
-
UNITS
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
o
Input Noise Voltage
Density
E
R
R
R
+25 C
-
-
N
S
S
S
O
o
= 0Ω, f = 100Hz
+25 C
O
o
= 0Ω, f = 1kHz
+25 C
-
O
o
Input Noise Current
Density
I
R = 500kΩ, f = 10Hz
+25 C
-
N
S
O
o
R = 500kΩ, f = 100Hz
+25 C
-
S
O
o
R = 500kΩ, f = 1kHz
+25 C
-
S
O
o
Gain Bandwidth Product
Unity Gain Bandwidth
GBWP
UGBW
V
= 200mV
,
+25 C
100
88
30
25
25
OUT
P-P
f
= 100kHz
O
o
o
-55 C to +125 C
-
MHz
o
V
= 200mV
1
+25 C
-
MHz
OUT
o
o
-55 C to +125 C
-
MHz
o
o
Slew Rate
±SR
V
= ±2.5V,
1
-55 C to +125 C
-
V/µs
OUT
C = 50pF
L
o
o
Full Power Bandwidth
FPBW
V
= 10V
1, 2
-55 C to +125 C
398
-
kHz
PEAK
Spec Number 511062-883
3-171
Specifications HA-5222/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC (Continued)
Device Characterized at: V
= ±15V, R
= 1kΩ, Unless Otherwise Specified.
SUPPLY
LOAD
LIMITS
PARAMETERS
SYMBOL
CLSG
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
o
o
Minimum Closed Loop
Stable Gain
R = 1kΩ, C = 50pF
1
-55 C to +125 C
1
-
V/V
L
L
o
Rise and Fall Time
t
t
V
V
V
= ±100mV
1, 4
1
+25 C
-
-
-
-
-
20
35
ns
ns
R,
F
OUT
o
o
-55 C to +125 C
o
Overshoot
±OS
= ±100mV
+25 C
25
%
OUT
OUT
o
o
-55 C to +125 C
30
%
o
o
Power Consumption
NOTES:
PC
= 0V, I
= 0mA
1, 3
-55 C to +125 C
660
mW
OUT
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
).
PEAK
5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511062-883
3-172
HA-5222/883
Die Characteristics
DIE DIMENSIONS:
78 x 185 x 19 mils ± 1 mils
1980 x 4690 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
4.2 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 128
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5222/883
OUT1
V+
-IN1
+IN1
V-
OUT2
-IN2
+IN2
Spec Number 511062-883
3-173
HA-5222
DESIGN INFORMATION(Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application
and design information only. No guarantee is implied.
o
Typical Performance Curves Unless Otherwise Specified: T = +25 C, V
= ±15V
SUPPLY
A
SUPPLY CURRENT/AMPLIFIER vs TEMPERATURE
CHANNEL SEPARATION vs FREQUENCY
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: Supply Voltage = ±15V, R = 1kΩ, C = 50pF, Unless Otherwise Specified
L
L
PARAMETERS
Input Offset Voltage
CONDITIONS
See Table 1
TEMPERATURE
TYPICAL
0.30
0.35
0.50
40
UNITS
mV
o
+25 C
Full
Full
mV
o
Average Offset Voltage Drift
Input Bias Current
See Table 1
See Table 1
µV/ C
o
+25 C
nA
nA
nA
nA
kΩ
Full
70
o
Input Offset Current
See Table 1
See Table 1
+25 C
15
Full
30
o
Differential Input Resistance
Input Noise Voltage
+25 C
70
o
f
f
f
f
f
f
f
= 0.1Hz to 10Hz
= 10Hz
+25 C
0.33
6.4
µV
P-P
O
O
O
O
O
O
O
o
Input Noise Voltage Density
+25 C
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
%
o
= 100Hz
= 1kHz
+25 C
3.7
o
+25 C
3.3
o
Input Noise Current Density
= 10Hz
+25 C
8
o
= 100Hz
= 1kHz
+25 C
2.7
o
+25 C
1.3
THD & N
See Note 1
= 0V to ±10V
+25oC
+25oC
Full
0.005
128
120
Large Signal Voltage Gain
V
dB
OUT
dB
Spec Number 511062-883
3-174
HA-5222
DESIGN INFORMATION(Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application
and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: Supply Voltage = ±15V, R = 1kΩ, C = 50pF, Unless Otherwise Specified
L
L
PARAMETERS
Common Mode Rejection Ratio
Unity Gain Bandwidth
CONDITIONS
= ±10V
TEMPERATURE
TYPICAL
95
UNITS
dB
∆V
Full
CM
o
-3dB
+25 C
40
MHz
MHz
MHz
MHz
MHz
MHz
V/V
V
o
+125 C
33
o
-55 C
50
o
Gain Bandwidth Product
1kHz to 400kHz
+25 C
140
115
160
1
o
+125 C
o
-55 C
Minimum Gain Stability
Output Voltage Swing
Full
Full
R = 333Ω
110
112.5
112.1
156
10
L
o
R = 1K
+25 C
V
L
Full
Full
V
Output Current
V
= ±10V
mA
V
OUT
o
Output Resistance
Full Power Bandwidth
+25 C
o
FPBW = SR/2πV
,
+25 C
398
kHz
PEAK
V
= 10V
PEAK
o
Channel Separation
Slew Rate
f
= 10kHz
+25 C
110
37
39
36
16
17
17
12
11
12
0.4
1.5
100
8
dB
O
o
V
V
V
= ±2.5V
+25 C
V/µs
OUT
OUT
OUT
o
+125 C
V/µs
o
-55 C
V/µs
o
Rise Time
= ±100mV
= ±100mV
+25 C
ns
o
+125 C
ns
o
-55 C
ns
o
Overshoot
Settling Time
+25 C
%
o
+125 C
%
o
-55 C
%
o
10V
, A = -1
0.1%
+25 C
µs
µs
STEP
V
o
0.01%
+25 C
Power Supply Rejection Ratio
Supply Current
∆V = ±10V to ±20V
Full
Full
dB
S
Quiescent, V
= 0V,
mA/Op Amp
OUT
I
= 0mA
OUT
o
Minimum Supply Voltage
NOTE:
Functional Operation Only.
Other Parameters May Vary.
+25 C
15
V
1. A
= 10, f = 1kHz, V
= 5Vrms, R = 600Ω, 10Hz to 100kHz, Minimum resolution of test equipment is 0.005%.
VCL
O
OUT L
Spec Number 511062-883
3-175
HA-5222
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Spec Number 511062-883
3-176
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