HGTP10N40E1 [INTERSIL]
10A, 12A, 400V and 500V N-Channel IGBTs; 10A ，12A ， 400V和500V N沟道IGBT的
| 型号： | HGTP10N40E1 |
| 厂家： | 
Intersil |
| 描述： | 10A, 12A, 400V and 500V N-Channel IGBTs |
| 文件： | 总7页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
10A, 12A,
400V and 500V N-Channel IGBTs
April 1995
Features
Packages
HGTH-TYPES JEDEC TO-218AC
• 10A and 12A, 400V and 500V
• VCE(ON): 2.5V Max.
EMITTER
COLLECTOR
• TFI: 1µs, 0.5µs
GATE
COLLECTOR
(FLANGE)
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
HGTP-TYPES JEDEC TO-220AB
• Power Supplies
• Motor Drives
EMITTER
COLLECTOR
COLLECTOR
GATE
(FLANGE)
• Protection Circuits
Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
PACKAGING AVAILABILITY
PART NUMBER
HGTH12N40C1
HGTH12N40E1
HGTH12N50C1
HGTH12N50E1
HGTP10N40C1
HGTP10N40E1
HGTP10N50C1
HGTP10N50E1
PACKAGE
TO-218AC
BRAND
G12N40C1
G
TO-218AC
TO-218AC
TO-218AC
TO-220AB
TO-220AB
TO-220AB
TO-220AB
G12N40E1
G12N50C1
G12N50E1
G10N40C1
G10N40E1
G10N50C1
G10N50E1
E
NOTE: When ordering, use the entire part number.
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTH12N40C1 HGTH12N50C1 HGTP10N40C1 HGTP10N50C1
HGTH12N40E1 HGTH12N50E1 HGTP10N40E1 HGTP10N50E1 UNITS
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.)
Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating Above TC > +25oC . . . . . . . . . . .
400
400
15
500
500
400
400
500
500
V
V
15
-5
-5
V
±20
12
±20
±20
±20
V
12
10
10
A
17.5
75
17.5
75
17.5
60
17.5
60
A
W
0.6
0.6
0.48
-55 to +150
0.48
-55 to +150
W/oC
oC
Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150
-55 to +150
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 1697.3
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-15
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
o
Electrical Specifications T = +25 C, Unless Otherwise Specified
C
LIMITS
HGTH12N40C1, E1, HGTH12N50C1, E1,
HGTP10N40C1, E1
HGTP10N50C1, E1
PARAMETERS
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0
MIN
MAX
MIN
MAX
UNITS
Collector-Emitter Breakdown
Voltage
I
400
-
500
-
V
CES
C
GE
Gate Threshold Voltage
V
V
= V , I = 1mA
2.0
4.5
2.0
4.5
V
GE(TH)
GE
CE
C
3 (Typ)
3 (Typ)
o
Zero Gate Voltage Collector
Current
I
V
V
V
V
V
= 400V, T = +25 C
-
-
-
-
-
-
-
-
-
-
-
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
-
µA
µA
µA
µA
nA
V
CES
CE
CE
CE
CE
GE
C
o
= 500V, T = +25 C
C
o
= 400V, T = +125 C
1000
-
C
o
= 500V, T = +125 C
1000
100
2.5
C
Gate-Emitter Leakage Current
Collector-Emitter on Voltage
I
= ±20V, V = 0
100
2.5
GES
CE
V
I
I
I
I
I
= 10A, V = 10V
GE
CE(ON)
C
C
C
C
C
= 17.5A, V = 20V
3.2
3.2
V
GE
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
V
= 5A, V = 10V
6 (Typ)
19 (Typ)
50
6 (Typ)
19 (Typ)
50
V
GEP
CE
Q
= 5A, V = 10V
nC
ns
ns
ns
G(ON)
D(ON)I
CE
t
= 10A, V
= 300V,
L = 50µH, T = +100 C,
CE(CLP)
o
J
t
50
50
RI
D(OFF)I
V
= 10V, R = 50Ω
GE
G
Turn-Off Delay Time
Fall Time
t
400
400
t
FI
40E1, 50E1
680 (Typ)
400
1000
500
680 (Typ)
400
1000
500
ns
ns
40C1, 50C1
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
I
= 10A, V
= 300V,
OFF
C
CE(CLP)
o
L = 50µH, T = +100 C,
J
W
x Frequency)
V
= 10V, R = 50Ω
OFF
GE G
40E1, 50E1
40C1, 50C1
680 (Typ)
400 (Typ)
1.67
2.083
µJ
µJ
o
Thermal Resistance
Junction-to-Case
R
HGTH, HGTM
HGTP
-
-
-
-
1.67
C/W
θJC
o
2.083
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-16
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
20.0
17.5
15.0
12.5
10.0
7.5
VGE = 10V, RGEN = RGE = 100Ω
100
80
60
40
20
5.0
2.5
0.0
-75 -50 -25
0
+25 +50 +75 +100 +125 +150 +175
0
+25
+50
+75
+100
+125
+150
TD, JUNCTION TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R = 50Ω,
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
G
V
= 0V ARE THE MIN. ALLOWABLE VALUES
GE
Z
θJC(t) = r(t)RθJC,
VGE = VCE, IC = 1mA
D CURVES APPLY FOR POWER PULSE,
TRAIN SHOWN READ TIME AT t1,
1.3
1.2
1.1
1.0
0.9
0.8
0.7
TJ(PEAK) - TC = P(PEAK)ZθJC(t)
10
1.0
D = 0.2
D = 0.5
0.1
D = 0.05
SINGLE PULSE
0.1
0.01
0.01
1.0
10
100
1000
-50
0
+50
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
t, TIME (ms)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-
TERISTICS
TC = +25oC
VGE = 7V
17.5
17.5
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
VGE = 20V
VGE = 10V
VGE = 8V
15.0
15.0
12.5
10.0
7.5
DUTY CYCLE = 0.5% MAX.
VGE = 6V
12.5
10.0
7.5
VGE = 5V
5.0
5.0
+25oC
+125oC
-40oC
2.5
2.5
VGE = 4V
0
2.5
5.0
7.5
10.0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 6. TYPICAL SATURATION CHARACTERISTICS
3-17
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves (Continued)
1200
1000
800
600
400
200
0
17.5
15.0
12.5
10.0
7.5
f = 1MHz
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
CISS
+25oC
5.0
2.5
COSS
CRSS
0
10
20
30
40
50
0
1
2
3
4
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE7. TYPICALCOLLECTOR-TO-EMITTERON-VOLTAGE
vs COLLECTOR CURRENT
FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
3.00
2.75
IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
300
IC = 10A, VGE = 10V
2.50
IC = 10A, VGE = 15V
200
100
0
2.25
2.00
IC = 5A, VGE = 10V
1.75
IC = 5A, VGE = 15V
1.50
+25
+50
+75
+100
+125
+150
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL V
vs TEMPERATURE
FIGURE 10. TYPICAL TURN-OFF DELAY TIME
CE(ON)
800
700
600
500
400
300
200
100
0
IC = 5A, VGE = 10V, VCL = 300V
EOFF = ∫ IC * VCEdt
L = 50µH, RG = 50Ω
VGE
IC
40E1/50E1
VCE
40C1/50C1
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 12. TYPICAL FALL TIME (I = 5A)
C
3-18
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves (Continued)
1000
900
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
VGE = 10V, VCL = 300V
IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
L = 50µH, RG = 50Ω
10A, 40E1/50E1
10A, 40C1/50C1
40E1/50E1
40C1/50C1
5A, 40E1/50E1
5A, 40C1/50C1
+25
+50
+75
+100
+125
+150
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. TYPICAL FALL TIME (I = 10A)
FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
C
10
500
BVCES
RL = 50Ω
G(REF) = 0.38mA
I
V
GE = 10V
VCC = BVCES
8
GATE-
EMITTER
VOLTAGE
375
250
125
0
6
4
VCC = 0.25 BVCES
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. VCE TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
2
0
COLLECTOR-EMITTER VOLTAGE
IG(REF)
IG(REF)
20
80
TIME (µs)
IG(ACT)
IG(ACT)
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS
AT CONSTANT GATE CURRENT
Test Circuit
RL = 13Ω
L = 50µH
VCC
130V
1/RG = 1/RGEN + 1/RGE
RGEN = 100Ω
VCE(CLP)
300V
=
20V
0V
RGE = 100Ω
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
3-19
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
3-20
3-21
相关型号：
©2020 ICPDF网 联系我们和版权申明