HS-1145RH [INTERSIL]
Radiation Hardened, High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable; 抗辐射，高速，低功耗，输出禁用电流反馈型视频运算放大器
| 型号： | HS-1145RH |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened, High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable |
| 文件： | 总9页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-1145RH
Data Sheet
August 1999
File Number 4227.1
Radiation Hardened, High Speed, Low
Power, Current Feedback Video
Operational Amplifier with Output Disable
Features
• Electrically Screened to SMD # 5962-96830
• QML Qualified per MIL-PRF-38535 Requirements
The HS-1145RH is a high speed, low power current
feedback amplifier built with Intersil’s proprietary
complementary bipolar UHF-1 (DI bonded wafer) process.
These devices are QML approved and are processed and
screened in full compliance with MIL-PRF-38535.
• Low Supply Current . . . . . . . . . . . . . . . . . . . . 5.9mA (Typ)
• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . .360MHz (Typ)
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . .1000V/µs (Typ)
• Excellent Gain Flatness (to 50MHz). . . . . . ±0.07dB (Typ)
• Excellent Differential Gain . . . . . . . . . . . . . . . 0.02% (Typ)
• Excellent Differential Phase . . . . . . . . 0.03 Degrees (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . . .60mA (Typ)
• Output Enable/Disable Time . . . . . . . . . 180ns/35ns (Typ)
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si)
• Latch Up. . . . . . . . . . . . . . . . . . . . . None (DI Technology)
This amplifier features a TTL/CMOS compatible disable
control, pin 8, which when pulled low, reduces the supply
current and forces the output into a high impedance state.
This allows easy implementation of simple, low power video
switching and routing systems. Component and composite
video systems also benefit from this op amp’s excellent gain
flatness, and good differential gain and phase specifications.
Multiplexed A/D applications will also find the HS-1145RH
useful as the A/D driver/multiplexer.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Applications
• Multiplexed Flash A/D Driver
• RGB Multiplexers/Preamps
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96830. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Ordering Information
• RF/IF Signal Processing
• Imaging Systems
INTERNAL
MKT. NUMBER
TEMP. RANGE
o
ORDERING NUMBER
5962F9683001VPA
5962F9683001VPC
( C)
HS7-1145RH-Q
HS7B-1145RH-Q
-55 to 125
-55 to 125
Pinout
HS-1145RH
GDIP1-T8 (CERDIP)
OR CDIP2-T8 (SBDIP)
TOP VIEW
NC
-IN
+IN
V-
1
2
3
4
8
7
6
5
DISABLE
V+
-
+
OUT
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HS-1145RH
Optional GND Pad (Die Use Only) for TTL
Compatibility
Application Information
Optimum Feedback Resistor
The die version of the HS-1145RH provides the user with a
GND pad for setting the disable circuitry GND reference.
With symmetrical supplies the GND pad may be left
unconnected, or tied directly to GND. If asymmetrical
supplies (e.g., +10V, 0V) are utilized, and TTL compatibility
is desired, die users must connect the GND pad to GND.
With an external GND, the DISABLE input is TTL compatible
regardless of supply voltage utilized.
Although a current feedback amplifier’s bandwidth
dependency on closed loop gain isn’t as severe as that of a
voltage feedback amplifier, there can be an appreciable
decrease in bandwidth at higher gains. This decrease may
be minimized by taking advantage of the current feedback
amplifier’s unique relationship between bandwidth and R .
All current feedback amplifiers require a feedback resistor,
F
even for unity gain applications, and R , in conjunction with
F
Pulse Undershoot and Asymmetrical Slew Rates
the internal compensation capacitor, sets the dominant pole
of the frequency response. Thus, the amplifier’s bandwidth is
The HS-1145RH utilizes a quasi-complementary output
stage to achieve high output current while minimizing
quiescent supply current. In this approach, a composite
device replaces the traditional PNP pulldown transistor. The
composite device switches modes after crossing 0V,
resulting in added distortion for signals swinging below
ground, and an increased undershoot on the negative
portion of the output waveform (See Figures 5, 8, and 11).
This undershoot isn’t present for small bipolar signals, or
large positive signals. Another artifact of the composite
device is asymmetrical slew rates for output signals with a
negative voltage component. The slew rate degrades as the
output signal crosses through 0V (See Figures 5, 8, and 11),
resulting in a slower overall negative slew rate. Positive only
signals have symmetrical slew rates as illustrated in the
large signal positive pulse response graphs (See Figures 4,
7, and 10).
inversely proportional to R . The HS-1145RH design is
F
optimized for R = 510Ω at a gain of +2. Decreasing R
F
F
decreases stability, resulting in excessive peaking and
overshoot (Note: Capacitive feedback will cause the same
problems due to the feedback impedance decrease at higher
frequencies). At higher gains, however, the amplifier is more
stable so R can be decreased in a trade-off of stability for
F
bandwidth.
The table below lists recommended R values for various
F
gains, and the expected bandwidth. For a gain of +1, a
resistor (+R ) in series with +IN is required to reduce gain
S
peaking and increase stability.
GAIN
(A
BANDWIDTH
(MHz)
)
R (Ω)
F
CL
-1
+1
425
300
270
330
300
130
510 (+R = 510Ω)
PC Board Layout
S
+2
510
200
180
This amplifier’s frequency response depends greatly on the
care taken in designing the PC board. The use of low
inductance components such as chip resistors and chip
capacitors is strongly recommended, while a solid
ground plane is a must!
+5
+10
Non-Inverting Input Source Impedance
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
(0.1µF) chip capacitor works well in most cases.
For best operation, the DC source impedance seen by the
non-inverting input should be ≥50Ω. This is especially
important in inverting gain configurations where the non-
inverting input would normally be connected directly to GND.
Terminated microstrip signal lines are recommended at the
device’s input and output connections. Capacitance,
parasitic or planned, connected to the output must be
minimized, or isolated as discussed in the next section.
DISABLE Input TTL Compatibility
The HS-1145RH derives an internal GND reference for the
digital circuitry as long as the power supplies are symmetrical
about GND. With symmetrical supplies the digital switching
Care must also be taken to minimize the capacitance to
ground at the amplifier’s inverting input (-IN), as this
capacitance causes gain peaking, pulse overshoot, and if
large enough, instability. To reduce this capacitance, the
designer should remove the ground plane under traces
connected to -IN, and keep connections to -IN as short as
possible.
threshold (V = (V + V )/2 = (2.0 + 0.8)/2) is 1.4V, which
TH IH IL
ensures the TTL compatibility of the DISABLE input. If
asymmetrical supplies (e.g., +10V, 0V) are utilized, the
switching threshold becomes:
V+ + V-
V
= ------------------- + 1.4V
TH
2
An example of a good high frequency layout is the
Evaluation Board shown in Figure 2.
and the V and V levels will be V ± 0.6V, respectively.
IH IL TH
2
HS-1145RH
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly
terminated transmission line will degrade the amplifier’s
V
H
phase margin resulting in frequency response peaking and
possible oscillations. In most cases, the oscillation can be
1
avoided by placing a resistor (R ) in series with the output
S
+IN
prior to the capacitance.
OUT
V-
V+
V
Figure 1 details starting points for the selection of this
resistor. The points on the curve indicate the R and C
L
GND
S
L
combinations for the optimum bandwidth, stability, and
settling time, but experimental fine tuning is recommended.
Picking a point above or to the right of the curve yields an
overdamped response, while points below or left of the curve
indicate areas of underdamped performance.
FIGURE 2A. TOP LAYOUT
R
and C form a low pass network at the output, thus
L
S
limiting system bandwidth well below the amplifier bandwidth
of 270MHz (for A = +1). By decreasing R as C increases
V
S
L
(as illustrated in the curves), the maximum bandwidth is
obtained without sacrificing stability. In spite of this, the
bandwidth decreases as the load capacitance increases. For
example, at A = +1, R = 62Ω, C = 40pF, the overall
V
S
L
bandwidth is limited to 180MHz, and bandwidth drops to
75MHz at A = +1, R = 8Ω, C = 400pF.
V
S
L
50
40
30
20
10
0
FIGURE 2B. BOTTOM LAYOUT
510
510
V
H
A
= +1
V
R
1
A
= +2
V
1
2
3
4
8
7
6
5
10µF
+5V
0.1µF
50Ω
50Ω
IN
OUT
0
100
200
300
400
50
150
250
350
V
L
GND
0.1µF
10µF
LOAD CAPACITANCE (pF)
-5V
GND
FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs
LOAD CAPACITANCE
FIGURE 2C. SCHEMATIC
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
Evaluation Board
The performance of the HS-1145RH may be evaluated using
the HFA11XX Evaluation Board.
The layout and schematic of the board are shown in Figure 2.
The V connection may be used to exercise the DISABLE
H
pin, but note that this connection has no 50Ω termination. To
order evaluation boards (part number HFA11XXEVAL),
please contact your local sales office.
3
HS-1145RH
o
Typical Performance Curves V
= ±5V, R = 510Ω, T = 25 C, R = 100Ω, Unless Otherwise Specified
F A L
SUPPLY
200
3.0
2.5
2.0
1.5
1.0
0.5
0
A
= +1
A
= +1
V
V
+R = 510Ω
+R = 510Ω
S
150
100
50
S
0
-50
-100
-0.5
-1.0
-150
-200
5ns/DIV.
5ns/DIV.
FIGURE 3. SMALL SIGNAL PULSE RESPONSE
FIGURE 4. LARGE SIGNAL POSITIVE PULSE RESPONSE
2.0
1.5
1.0
0.5
0
200
A
= +1
A
= +2
V
V
+R = 510Ω
S
150
100
50
0
-0.5
-1.0
-50
-100
-1.5
-2.0
-150
-200
5ns/DIV.
5ns/DIV.
FIGURE 5. LARGE SIGNAL BIPOLAR PULSE RESPONSE
FIGURE 6. SMALL SIGNAL PULSE RESPONSE
3.0
2.0
1.5
1.0
0.5
0
A
= +2
A = +2
V
V
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-0.5
-1.0
-1.5
-2.0
5ns/DIV.
5ns/DIV.
FIGURE 7. LARGE SIGNAL POSITIVE PULSE RESPONSE
FIGURE 8. LARGE SIGNAL BIPOLAR PULSE RESPONSE
4
HS-1145RH
o
Typical Performance Curves V
= ±5V, R = 510Ω, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
F A L
SUPPLY
200
3.0
2.5
2.0
1.5
1.0
0.5
0
A
= +10
V
A
= +10
V
R
= 180Ω
F
R
= 180Ω
150
100
50
F
0
-50
-100
-0.5
-1.0
-150
-200
5ns/DIV.
5ns/DIV.
FIGURE 9. SMALL SIGNAL PULSE RESPONSE
FIGURE 10. LARGE SIGNAL POSITIVE PULSE RESPONSE
2.0
1.5
1.0
0.5
0
A
= +10
V
R
= 180Ω
F
DISABLE
800mV/DIV.
(0.4V to 2.4V)
OUT
400mV/DIV.
-0.5
-1.0
0V
-1.5
-2.0
A
= +1, V = 1V
IN
V
5ns/DIV.
50ns/DIV.
FIGURE 11. LARGE SIGNAL BIPOLAR PULSE RESPONSE
FIGURE 12. OUTPUT ENABLE AND DISABLE RESPONSE
V
= 200mV
P-P
OUT
+R = 510Ω (+1)
A
= +2
V
3
3
0
S
A
= +1
= -1
V
+R = 0Ω (-1)
S
0
A
= +10
A
V
-3
V
-3
A
= +5
V
A
= +2
V
0
0
A
= -1
V
90
90
A
= +5
V
= 200mV
P-P
V
OUT
180
270
R
R
R
= 510Ω (+2)
= 200Ω (+5)
= 180Ω (+10)
180
270
F
F
F
A
= +10
100
V
A
= +1
V
0.3
1
10
FREQUENCY (MHz)
500
0.3
1
10
100
500
FREQUENCY (MHz)
FIGURE 13. FREQUENCY RESPONSE
FIGURE 14. FREQUENCY RESPONSE
5
HS-1145RH
o
Typical Performance Curves V
= ±5V, R = 510Ω, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
F A L
SUPPLY
A
= +2
V
V
= 200mV
P-P
OUT
3
0
3
0
A
= -1
V
V
= 4V
= 5V
(+1)
(-1, +2)
OUT
P-P
V
= 1.5V
-3
-3
OUT
P-P
V
A
= +1
OUT
P-P
V
V
= 5V
OUT
P-P
+R = 510Ω (+1)
S
A
= +2
V
V
= 200mV
P-P
OUT
0
90
V
= 1.5V
180
270
OUT
P-P
V
= 5V
P-P
OUT
1
10
100
200
0.3
1
10
FREQUENCY (MHz)
100
500
FREQUENCY (MHz)
FIGURE15. FREQUENCYRESPONSEFORVARIOUSOUTPUT
VOLTAGES
FIGURE 16. FULL POWER BANDWIDTH
V
= 200mV
P-P
R
= 1kΩ
OUT
= +2
500
400
300
200
100
0
L
R
= 500Ω
3
L
A
= +2
A
V
R
= 200mV
V
V
OUT
P-P
= 180Ω (+10)
F
0
+R = 510Ω (+1)
S
R
= 50Ω
L
-3
R
= 100Ω
L
A
= +1
V
R
= 50Ω
L
= 100Ω
R
0
L
90
R
= 1kΩ
A
= +10
L
L
V
R
= 500Ω
180
270
-100
-50
0
50
100
150
0.3
1
10
FREQUENCY (MHz)
100
500
o
TEMPERATURE ( C)
FIGURE 17. FREQUENCY RESPONSE FOR VARIOUS LOAD
RESISTORS
FIGURE 18. -3dB BANDWIDTH vs TEMPERATURE
-30
V
= 200mV
P-P
OUT
+R = 510Ω (+1)
A
= +2
V
-40
-50
-60
-70
-80
-90
S
V
= 1V
P-P
IN
0.25
0.20
0.15
0.10
0.05
0
A
= +2
V
A
= +1
V
-0.05
-0.10
0.3
1
10
100
1
10
75
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE 19. GAIN FLATNESS
FIGURE 20. OFF ISOLATION
6
HS-1145RH
o
Typical Performance Curves V
= ±5V, R = 510Ω, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
F
A
L
-40
A = +2
V
V
= 2V
P-P
OUT
A
= +1, +2
-50
-60
-70
-80
-90
V
1K
100
10
A
= -1
V
1
0.1
0.01
0.3
1
10
100
0.3
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
FIGURE 21. REVERSE ISOLATION
FIGURE 22. ENABLED OUTPUT IMPEDANCE
-30
-40
-50
-60
-70
A
= +2
V
0.8
0.6
0.4
V
= 2V
A
= +2
OUT
V
20MHz
0.2
0.1
0
10MHz
-0.2
-0.4
-0.6
-0.8
-5
0
5
10
15
3
8
13
18
23
28
33
38
43
48
TIME (ns)
OUTPUT POWER (dBm)
FIGURE 23. SETTLING RESPONSE
FIGURE 24. SECOND HARMONIC DISTORTION vs P
OUT
-30
-40
-50
-60
-70
3.6
A
= -1
|-V | (R = 100Ω)
OUT L
V
A
= +2
V
3.5
+V
OUT
(R = 100Ω)
L
3.4
3.3
3.2
3.1
+V
OUT
(R = 50Ω)
L
3.0
2.9
2.8
|-V
| (R = 50Ω)
L
OUT
2.7
2.6
-50
-25
0
25
50
o
75
100
125
-5
0
5
10
15
OUTPUT POWER (dBm)
TEMPERATURE ( C)
FIGURE 25. THIRD HARMONIC DISTORTION vs P
FIGURE 26. OUTPUT VOLTAGE vs TEMPERATURE
OUT
7
HS-1145RH
o
Typical Performance Curves V
= ±5V, R = 510Ω, T = 25 C, R = 100Ω, Unless Otherwise Specified (Continued)
SUPPLY
F
A
L
6.1
6.0
5.9
5.8
5.7
5.6
100
100
I
NI-
10
10
E
NI
I
NI+
1
100
1
0.1
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
1
10
POWER SUPPLY VOLTAGE (±V)
FREQUENCY (kHz)
FIGURE 27. INPUT NOISE CHARACTERISTICS
FIGURE 28. SUPPLY CURRENT vs SUPPLY VOLTAGE
Burn-In Circuit
Irradiation Circuit
HS-1145RH CERDIP
HS-1145RH CERDIP
R2
R2
1
8
7
6
5
1
2
3
4
8
7
6
5
D2
C1
R1
R1
R1
R1
2
3
4
V+
V+
-
-
+
+
D1
C1
D2
V-
D1
V-
C1
C2
NOTES:
NOTES:
1. R1 = 1kΩ, ±5% (Per Socket)
2. R2 = 10kΩ, ±5% (Per Socket)
8. R1 = 1kΩ, ±5%
9. R2 = 10kΩ, ±5%
3. C1 = 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum
4. D1 = 1N4002 or Equivalent (Per Board)
5. D2 = 1N4002 or Equivalent (Per Socket)
6. V+ = +5.5V ± 0.5V
10. C1 = C2 = 0.01µF
11. V+ = +5.0V ± 0.5V
12. V- = -5.0V ± 0.5V
7. V- = -5.5V ± 0.5V
8
HS-1145RH
Die Characteristics
DIE DIMENSIONS:
Substrate:
UHF-1, Bonded Wafer, DI
59 mils x 59 mils x 19 mils ±1 mil
(1500µm x 1500µm x 483µm ± 25.4µm)
ASSEMBLY RELATED INFORMATION:
INTERFACE MATERIALS:
Glassivation:
Substrate Potential:
Floating (Recommend Connection to V-)
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
ADDITIONAL INFORMATION:
Transistor Count:
Top Metallization:
75
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
HS-1145RH
DISABLE
-IN
V+
OUT
+IN
V-
OPTIONAL GND (NOTE)
NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS
input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V). See the “Application Information” section for details.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
9
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SI9122E
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