HS-117RH [INTERSIL]

Radiation Hardened Adjustable Positive Voltage Regulator; 抗辐射可调正电压稳压器
HS-117RH
型号: HS-117RH
厂家: Intersil    Intersil
描述:

Radiation Hardened Adjustable Positive Voltage Regulator
抗辐射可调正电压稳压器

稳压器
文件: 总2页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HS-117RH  
Data Sheet  
February 2000  
File Number 4560.4  
Radiation Hardened  
Features  
Adjustable Positive Voltage Regulator  
• Electrically Screened to DSSC SMD # 5962-99547  
• QML Qualified per MIL-PRF-38535 Requirements  
The Radiation Hardened HS-117RH is an adjustable positive  
voltage linear regulator capable of operating up to 40VDC.  
The voltage is adjustable from 1.2V to 37V with two external  
resistors. The device is capable of sourcing from 50mA to  
• Radiation Environment  
- 300kRAD(Si) (Max)  
1.25A  
(Min). Protection is provided by the on-chip  
- Latch-up Immune  
PEAK  
thermal shutdown and output current limiting circuitry.  
- Negligible Low Dose Rate Effects Sensitivity  
The Intersil HS-117RH has advantages over other industry  
standard types, in that circuitry is incorporated to minimize  
the effects of radiation and temperature on device stability.  
Negligible low dose rate sensitivity is achieved through the  
use of vertical transistor geometries.  
• Superior Temperature Stability  
• Over-Temp and Over-Current/Voltage Protection  
Applications  
• Switch Mode DC - DC Power Conversion  
• Housekeeping Supplies for Motors  
• Power Supplies for Robotic Control  
Constructed with the Intersil dielectrically isolated Rad Hard  
Silicon Gate (RSG) process, the HS-117RH is immune to  
Single Event Latch-up and has been specifically designed to  
provide highly reliable performance in harsh radiation  
environments.  
Ordering Information  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
ORDERING  
NUMBER  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
( C)  
5962F9954701VXC  
5962F9954701QXC  
5962F9954701/VYA  
5962F9954701/QYA  
HS9S-117RH/Proto  
HSYE-117RH/Proto  
HS9S-117RH-Q  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
Detailed Electrical Specifications for the HS-117RH are  
contained in SMD 5962-99547. A “hot-link” is provided  
on our homepage for downloading.  
HS9S-117RH-8  
HSYE-117RH-Q  
HSYE-117RH-8  
www.intersil.com/spacedefense/space.asp  
Pinout  
HS9S-117RH/Proto  
HSYE-117RH/Proto  
HS9S-117RH (TO-257AA FLANGE MOUNT)  
TOP VIEW  
HSYE-117RH (SMD.5 CLCC)  
BOTTOM VIEW  
IN  
3
2
1
OUT  
ADJUST  
2
3
1 - ADJUST  
2 - IN  
3 - OUT  
1
NOTE: No current JEDEC outline for the SMD.5 package. Refer to  
SMD for package dimensions. The TO-257 is a totally isolated metal  
package.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
HS-117RH  
Die Characteristics  
DIE DIMENSIONS  
Backside Finish:  
2616µm x 2794µm (103 mils x 110 mils)  
483µm ±25.4µm (19 mils ±1 mil)  
Gold  
ASSEMBLY RELATED INFORMATION  
INTERFACE MATERIALS  
Glassivation:  
Substrate Potential:  
Unbiased (DI)  
Type: Silox (SiO )  
2
Thickness: 8.0kÅ ±1.0kÅ  
ADDITIONAL INFORMATION  
Worst Case Current Density:  
Top Metallization:  
5
2
<2.0 x 10 A/cm  
Type: AlSiCu  
Thickness: 16.0kÅ ±2kÅ  
Transistor Count:  
95  
Substrate:  
Radiation Hardened Silicon Gate,  
Dielectric Isolation  
Metallization Mask Layout  
HS-117RH  
V
V
IN  
IN  
V
V
OUT  
OUT  
ADJ  
V
OUTK  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
2

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