HS-139RH_04 [INTERSIL]

Radiation Hardened Quad Voltage Comparator; 抗辐射四路电压比较器


型号：	HS-139RH_04
厂家：	Intersil
描述：	Radiation Hardened Quad Voltage Comparator 抗辐射四路电压比较器比较器
文件：	总2页 (文件大小：135K)
中文：	中文翻译
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HS-139RH

Data Sheet

December 22, 2004

FN3573.3

Radiation Hardened Quad Voltage

Comparator

Features

• QML Qualified Per MIL-PRF-38535 Requirements

The Radiation Hardened HS-139RH consists of four

independent single or dual supply voltage comparators on a

single monolithic substrate. The common mode input

voltage range includes ground, even when operated from a

single supply, and the low supply current makes these

comparators suitable for low power applications. These

types were designed to directly interface with TTL and

CMOS.

• Radiation Environment

- Latch-up Free Under any Conditions

- Total Dose (Max) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)

- SEU LET Threshold . . . . . . . . . . . . . . . 20MeV/cm /mg

- Low Dose Rate Effects Immunity

• 100V Output Voltage Withstand Capability

• ESD Protection to >3000V

The HS-139RH is fabricated on our dielectrically isolated

Rad Hard Silicon Gate (RSG) process, which provides an

immunity to Single Event Latch-up and the capability of

highly reliable performance in any radiation environment.

• Differential Input Voltage Range Equal to the Supply

Voltage

• Input Offset Voltage (V ) . . . . . . . . . . . . . . . . 2mV (Max)

• Quiescent Supply Current . . . . . . . . . . . . . . . . 2mA (Max)

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed below must be used when ordering.

Applications

• Pulse Generators

• Timing Circuitry

Detailed Electrical Specifications for the HS-139RH are

contained in SMD 5962-98613. A “hot-link” is provided

on our homepage with instructions for downloading.

www.intersil.com/spacedefense/newsafclasst.asp

• Level Shifting

• Analog to Digital Conversion

Ordering Information

Pinouts

ORDERING

NUMBER

INTERNAL

MKT. NUMBER

HS-139RH (SBDIP CDIP2-T14)

TEMP. RANGE ( C)

TOP VIEW

5962F9861301VCC HS1-139RH-Q

5962F9861301QCC HS1-139RH-8

-55 to 125

OUT 2

OUT 1

V+

14 OUT 3

13 OUT 4

12 GND

HS1-139RH/Proto

5962F9861301VXC HS9-139RH-Q

5962F9861301QXC HS9-139RH-8

- IN 1

+ IN 1

- IN 2

+ IN 2

11 + IN 4

10 - IN 4

+ IN 3

- IN 3

HS9-139RH/Proto

HS-139RH (FLATPACK CDFP3-F14)

TOP VIEW

OUT 2

OUT 1

V+

OUT 3

OUT 4

GND

- IN 1

+ IN 1

- IN 2

+IN 2

+ IN 4

- IN 4

+ IN 3

- IN 3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

HS-139RH

Die Characteris tics

DIE DIMENSIONS:

Backside Finish:

3750µm x 2820µm (148 mils x 111 mils)

483µm ± 25.4µm (19 mils ± 1 mil)

Silicon

ASSEMBLY RELATED INFORMATION:

INTERFACE MATERIALS:

Glassivation:

Substrate Potential:

Unbiased (DI)

Type: Silox (SiO )

Thickness: 8.0kÅ ± 1.0kÅ

ADDITIONAL INFORMATION:

Worst Case Current Density:

Top Metallization:

<2.0 x 10 A/cm

Type: AlSiCu

Thickness: 16.0kÅ ± 2kÅ

Transistor Count:

Substrate:

Radiation Hardened Silicon Gate, Dielectric Isolation

Metallization Mas k Layout

HS-139RH

GND

(12)

+IN4

(11)

-IN4

(10)

OUT4

(13)

+IN3

(9)

OUT3

(14)

-IN3

(8)

+IN2

(7)

OUT2

(1)

-IN2

(6)

OUT1

(2)

V+

(3)

-IN1

(4)

+IN1

(5)

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN3573.3

December 22, 2004

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