HS-4423BRH [INTERSIL]
Radiation Hardened Dual, Inverting Power MOSFET Drivers; 抗辐射双通道，反相功率MOSFET驱动器
| 型号： | HS-4423BRH |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Dual, Inverting Power MOSFET Drivers |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-4423RH, HS-4423BRH
Data Sheet
June 1999
File Number 4564.4
Radiation Hardened Dual, Inverting Power
MOSFET Drivers
Features
• Electrically Screened to DESC SMD # 5962-99511
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
The Radiation Hardened HS-4423RH and the HS-4423BRH
are inverting, dual, monolithic high-speed MOSFET drivers
designed to convert TTL level signals into high current
outputs at voltages up to 18V.
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- Total Dose (Max). . . . . . . . . . . . . . . . . .3 x 10 RAD(SI)
- Latch-Up Immune
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of
high gate capacitance power MOSFETs, like our Rad Hard
FS055, in high frequency applications.
- Low Dose Rate Immune
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Typ)
• Matched Rise and Fall Times (C = 4300pF) . . . 75ns (Max)
L
• Low Voltage Lock-Out Feature
- HS-4423RH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <10.0V
- HS-4423BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . . <7.5V
• Wide Supply Voltage Range. . . . . . . . . . . . . . . 12V to 18V
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate
capacitance. The output stage incorporates a low voltage
lock-out circuit that puts the outputs into a three-state mode
when the supply voltage drops below 10V for the
HS-4423RH and 7.5V for the HS-4423BRH.
• Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (Max)
• Consistent Delay Times with V
Changes
CC
• Low Power Consumption
- 40mW with Inputs High
- 20mW with Inputs Low
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments
• Low Equivalent Input Capacitance . . . . . . . . . .3.2pF (Typ)
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4000V
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99511. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Ordering Information
Pinout
INTERNAL
MKT. NUMBER
TEMP. RANGE
o
ORDERING NUMBER
5962F9951101VXC
5962F9951101QXC
HS9-4423RH/Proto
5962F9951102VXC
5962F9951102QXC
HS9-4423BRH/Proto
( C)
HS-4423RH, HS-4423BRH (FLATPACK CDFP4-F16)
TOP VIEW
HS9-4423RH-Q
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
HS9-4423RH-8
NC
IN A
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
HS9-4423RH/Proto
HS9-4423BRH-Q
HS9-4423BRH-8
HS9-4423BRH/Proto
OUT A
OUT A
NC
GND A
GND B
NC
V
V
CC
CC
OUT B
OUT B
NC
IN B
NC
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-
bonded to their same electrical points on the die.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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HS-4423RH, HS-4423BRH
Die Characteristics
DIE DIMENSIONS:
Backside Finish:
4890µm x 3370µm (193 mils x 133 mils)
Silicon
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
ASSEMBLY RELATED INFORMATION:
INTERFACE MATERIALS:
Glassivation:
Substrate Potential:
Unbiased (DI)
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
ADDITIONAL INFORMATION:
Worst Case Current Density:
Top Metallization:
5
2
<2.0 x 10 A/cm
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Transistor Count:
Substrate:
125
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
HS-4423RH, HS-4423BRH
GND (5)
GND (4)
IN A (2)
IN B (7)
OUT B (10)
OUT B (11)
OUT A (15)
OUT A (14)
V
(12)
V
(13)
CC
CC
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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