HS0-26CLV31RH-Q [INTERSIL]
Radiation Hardened 3.3V Quad Differential Line Driver; 抗辐射3.3V四路差分线路驱动器
| 型号： | HS0-26CLV31RH-Q |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened 3.3V Quad Differential Line Driver |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-26CLV31RH
TM
Data Sheet
August 2000
File Number 4898
Radiation Hardened 3.3V Quad Differential
Line Driver
Features
• Electrically Screened to SMD # 5962-96663
The Intersil HS-26CLV31RH is a radiation hardened 3.3V
quad differential line driver designed for digital data
transmission over balanced lines, in low voltage, RS-422
protocol applications. CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.
• QML Qualified per MIL-PRF-38535 Requirements
• 1.2 Micron Radiation Hardened CMOS
- Total Dose. . . . . . . . . . . . . . . . . . . . . 300 krad(Si)(Max)
2
- Single Event Upset LET . . . . . . . . . . .100MeV/mg/cm )
- Single Event Latch-up Immune
The HS-26CLV31RH accepts CMOS level inputs and converts
them to differential outputs. Enable pins allow several devices
to be connected to the same data source and addressed
independently. The device has unique outputs that become
high impedance when the driver is disabled or powered-down,
maintaining signal integrity in multi-driver applications.
• Extremely Low Stand-by Current . . . . . . . . . 100µA (Max)
• Operating Supply Range . . . . . . . . . . . . . . . . 3.0V to 3.6V
• CMOS Level Inputs . . . . V > (.7)(V ); V < (.3)(V
)
IH
DD
IL
DD
• Differential Outputs. . . . . . . . . . . V
> 1.8V; V < 0.5V
OH
OL
• High Impedance Outputs when Disabled or Powered
Down
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
• Low Output Impedance . . . . . . . . . . . . . . . . . 10Ω or Less
o
o
• Full -55 C to 125 C Military Temperature Range
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96663. A “hot-link” is provided
on our homepage for downloading.
Pinouts
HS1-26CLV31RH (SBDIP)
CDIP2-T16
www.intersil.com/spacedefense/space.htm
TOP VIEW
Ordering Information
AIN
AO
1
2
3
4
5
6
7
8
16 V
DD
TEMP.
INTERNAL
RANGE
15 DIN
14 DO
o
ORDERING NUMBER
5962F9666302QEC
5962F9666302QXC
5962F9666302V9A
5962F9666302VEC
5962F9666302VXC
MKT. NUMBER
( C)
AO
HS1-26CLV31RH-8
HS9-26CLV31RH-8
HS0-26CLV31RH-Q
HS1-26CLV31RH-Q
HS9-26CLV31RH-Q
-55 to 125
-55 to 125
25
ENABLE
BO
13 DO
12 ENABLE
11 CO
BO
-55 to 125
-55 to 125
10 CO
BIN
9
CIN
GND
HS1-26CLV31RH/PROTO HS1-26CLV31RH/PROTO -55 to 125
HS9-26CLV31RH/PROTO HS9-26CLV31RH/PROTO -55 to 125
Logic Diagram
HS9-26CLV31RH (FLATPACK)
CDFP4-F16
ENABLE ENABLE DIN
CIN
BIN
AIN
TOP VIEW
AIN
AO
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
DIN
AO
DO
ENABLE
BO
DO
ENABLE
CO
DO DO
CO CO
BO BO
AO AO
BO
BIN
CO
GND
CIN
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1
HS-26CLV31RH
Die Characteristics
DIE DIMENSIONS:
96.5 mils x 195 mils x 21 mils
(2450 x 4950)
Substrate:
AVLSI1RA
Backside Finish:
INTERFACE MATERIALS:
Silicon
Glassivation:
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8kÅ ± 1kÅ
V
DD
Metallization:
ADDITIONAL INFORMATION:
Worst Case Current Density:
Bottom: Mo/TiW
Thickness: 5800Å ± 1kÅ
Top: AlSiCu (Top)
Thickness: 10kÅ ± 1kÅ
5
2
<2.0 x 10 A/cm
Bond Pad Size:
110µm x 100µm
Metallization Mask Layout
HS-26CLV31RH
AO (2)
(14) DO
AO (3)
(13) DO
ENABLE (4)
(12) ENABLE
BO (5)
(11) CO
BO (6)
(10) CO
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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