HS0-3530AEH-Q [INTERSIL]

Radiation Hardened Programmable Low Power Op Amps; 抗辐射可编程的低功耗运算放大器
HS0-3530AEH-Q
型号: HS0-3530AEH-Q
厂家: Intersil    Intersil
描述:

Radiation Hardened Programmable Low Power Op Amps
抗辐射可编程的低功耗运算放大器

运算放大器
文件: 总2页 (文件大小:181K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Radiation Hardened Programmable Low Power Op  
Amps  
HS-3530ARH, HS-3530AEH  
Features  
The HS-3530ARH, HS-3530AEH are Low Power Operational  
Amplifiers, which are internally compensated monolithic  
devices offering a wide range of performance specifications.  
Parameters such as power dissipation, slew rate, bandwidth,  
noise and input DC parameters are programmed by selecting  
an external resistor or current source. Supply voltages as low  
as ±3V may be used with little degradation of AC performance.  
The HS-3530ARH, HS-3530AEH have been specifically  
designed to meet exposure to space radiation environments.  
Operation from -55°C to +125°C is guaranteed.  
• Radiation Performance  
5
- Gamma Dose . . . . . . . . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)  
- SEL. . . . . . . . . . . . . . . . . . . . . . . . Immune (RSG DI Process)  
- Low dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)*  
*Product capability established by initial characterization. The EH  
version is acceptance tested on a wafer by wafer basis to  
50krad(Si) at low dose rate.  
• Wide Range AC Programming  
- Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . 0.025 to 0.1V/µs  
- Gain X Bandwidth . . . . . . . . . . . . . . . . . . 30kHz to 750kHz  
A major advantage of the HS-3530ARH, HS-3530AEH is that  
operating characteristics remain virtually constant over a wide  
supply range (±3V to ±15V), allowing the amplifiers to offer  
maximum performance in almost any system, including  
battery operated equipment. A primary application for these  
devices is in active filtering and conditioning for a wide variety  
of signals that differ in frequency and amplitude. Also, by  
modulating the set current, they can be used for designs such  
as current controlled oscillators/modulators, sample and hold  
circuits and variable active filters.  
• Wide Range DC Programming  
- Power Supply Range . . . . . . . . . . . . . . . . . . . ±3.0V to ±15V  
• Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . 15µA to 150µA  
• Output Current . . . . . . . . . . . . . . . . . . . . . . . 0.25mA to 2.5mA  
• Quiescent Power . . . . . . . . . . . . . . . . . . . . . . . . . 4.8mW (Max)  
• Dielectrically Isolated Device Islands  
• Short Circuit Protection  
• Full -55°C to +125°C Military Temperature Range  
Specifications  
Specifications for Rad Hard QML devices are controlled by the  
Defense Logistics Agency Land and Maritime (DLA). The SMD  
numbers listed below must be used when ordering.  
Pin Configurations  
HS2-3530ARH (CAN), MACY1-X8  
TOP VIEW  
Detailed Electrical Specifications for the HS-3530ARH,  
HS-3530AEH are contained in SMD 5962-95687. A “hot-link”  
to the DLA website is also provided on the Product Information  
page for downloading the document.  
I
SET  
8
OFFSET  
NULL  
1
3
7
5
V+  
www.intersil.com/products/deviceinfo.asp?pn=HS-3530ARH  
INVERTING  
2
6
OUTPUT  
INPUT  
The Intersil Quality Management Plan, listing all screening  
operations, is available on our website.  
www.intersil.com/design/quality/manuals.asp  
OFFSET  
NULL  
NON-INVERTING  
INPUT  
4
V-  
Ordering Information  
ORDERING  
NUMBER  
PART  
NUMBER  
TEMP.  
RANGE (°C)  
HS9-3530ARH, HS9-3530AEH(FLATPACK), CDFP3-F10  
TOP VIEW  
5962F9568701QGA  
5962F9568701VGA  
5962F9568702VGA  
5962F9568701VXC  
5962F9568702VXC  
5962F9568701V9A  
5962F9568702V9A  
HS2-3530ARH-8  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
NC  
OFFSET  
- IN  
1
2
3
4
5
10  
9
I
SET  
HS2-3530ARH-Q  
HS2-3530AEH-Q  
HS9-3530ARH-Q  
HS9-3530AEH-Q  
HS0-3530ARH-Q  
HS0-3530AEH-Q  
V +  
8
OUTPUT  
OFFSET  
NC  
+ IN  
7
V -  
6
HS2-3530ARH/PROTO HS2-3530ARH/Proto  
HS9-3530ARH/PROTO HS9-3530ARH/Proto  
December 12, 2012  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 1999, 2012. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
1
FN4653.1  
HS-3530ARH, HS-3530AEH  
ASSEMBLY RELATED INFORMATION  
Die Characteristics  
DIE DIMENSIONS:  
SUBSTRATE POTENTIAL:  
Unbiased (DI)  
1720µm x 1390µm x 533µm ±25.4µm  
(68 mils x 55 mils x 21 mils ±1 mil)  
ADDITIONAL INFORMATION  
INTERFACE MATERIALS  
GLASSIVATION  
WORST CASE CURRENT DENSITY:  
5
2
<2.0 x 10 A/cm  
Type: Silox (SiO )  
2
Thickness: 8.0kA ±1.0kA  
TRANSISTOR COUNT:  
49  
TOP METALLIZATION  
Type: AlSiCu  
Thickness: 16.0kA ±2kA  
SUBSTRATE:  
Radiation Hardened Silicon Gate,  
Dielectric Isolation  
BACKSIDE FINISH:  
Silicon  
Metallization Mask Layout Pin Numbers shown are for the Can Package  
HS-3530ARH, HS-3530AEH  
IN+  
(3)  
IN-  
(2)  
OFFSET  
(1)  
NC  
V- (4)  
NC  
I
SET  
(8)  
NC  
OFFSET (5)  
OUTPUT (6)  
NC  
V+ (7)  
For additional products, see www.intersil.com/product_tree  
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted  
in the quality certifications found at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time  
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be  
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third  
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN4653.1  
December 12, 2012  
2

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