HS0-4424RH-Q [INTERSIL]

Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers;


型号：	HS0-4424RH-Q
厂家：	Intersil
描述：	Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers 驱动信息通信管理接口集成电路驱动器
文件：	总3页 (文件大小：255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Radiation Hardened Dual, Non-Inverting Power MOSFET

Drivers

HS-4424RH, HS-4424EH,

HS-4424BRH, HS-4424BEH

Features

• Electrically screened to DESC SMD # 5962-99560

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

The Radiation Hardened HS-4424RH, HS-4424EH,

HS-4424BRH and HS-4424BEH are non-inverting, dual,

monolithic high-speed MOSFET drivers designed to convert TTL

level signals into high current outputs at voltages up to 18V.

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Latch-up immune

The inputs of these devices are TTL compatible and can be

directly driven by our HS-1825ARH PWM device or by our

ACS/ACTS and HCS/HCTS type logic devices. The fast rise

times and high current outputs allow very quick control of high

gate capacitance power MOSFETs in high frequency

applications.

- Low dose rate immune

• I

PEAK

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (min)

• Matched rise and fall times (C = 4300pF) . . . . . . 75ns (max)

• Low voltage lock-out feature

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lock-out circuit that

puts the outputs into a three-state mode when the supply

voltage drops below 10V for the HS-4424RH, HS-4424EH and

7.5V for the HS-4424BRH, HS-4424BEH.

- HS-4424RH, HS-4424EH. . . . . . . . . . . . . . . . . . . . . . < 10.0V

- HS-4424BRH, HS-4424BEH . . . . . . . . . . . . . . . . . . . . < 7.5V

• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V

• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)

• Consistent delay times with V changes

Constructed with the Intersil dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to Single Event Latch-up and have been specifically designed

to provide highly reliable performance in harsh radiation

environments.

• Low power consumption

- 40mW with inputs high

- 20mW with inputs low

• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)

• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>4000V

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

Applications

• Switching power supplies

• DC/DC converters

Detailed Electrical Specifications for these devices are

contained in SMD 5962-99560.

• Motor controllers

Pin Configuration

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

(FLATPACK CDFP4-F16)

TOP VIEW

IN A

OUT A

GND A

GND B

OUT B

IN B

NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their

same electrical points on the die.

September 24, 2013

FN4739.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

Ordering Information

ORDERING

SMD NUMBER

(Note 2)

PART NUMBER

(Note 1)

TEMPERATURE RANGE

(°C)

PACKAGE

(RoHS Compliant)

PKG.

DWG. #

5962F9956004V9A

HS0-4424BEH-Q

-55 to +125

DIE

5962F9956002V9A

HS0-4424BRH/SAMPLE

5962F9956003V9A

5962F9956001V9A

HS0-4424RH/SAMPLE

5962F9956001VXC

5962F9956004VXC

5962F9956003VXC

5962F9956002QXC

5962F9956002VXC

HS9-4424BRH/PROTO

HS9-4424RH/PROTO

5962F9956001QXC

NOTES:

HS0-4424BRH-Q

HS0-4424BRH/SAMPLE

HS0-4424EH-Q

DIE

DIE SAMPLE

DIE

HS0-4424RH-Q

DIE

HS0-4424RH/SAMPLE

HS9-4424RH-Q

DIE SAMPLE

16 Ld Flatpack

K16.A

HS9-4424BEH-Q

HS9-4424EH-Q

HS9-4424BRH-8

HS9-4424BRH-Q

HS9-4424BRH/PROTO

HS9-4424RH/PROTO

HS9-4424RH-8

1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both

SnPb and Pb-free soldering operations.

2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the

“Ordering Information” table on page 2 must be used when ordering..

FN4739.2

September 24, 2013

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

Die Characteristics

DIE DIMENSIONS:

Backside Finish:

4890μm x 3370μm (193 mils x 133 mils)

Silicon

Thickness: 483μm ± 25.4μm (19 mils ± 1 mil)

ASSEMBLY RELATED INFORMATION:

INTERFACE MATERIALS:

Glassivation:

Substrate Potential:

Unbiased (DI)

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ ± 1.0kÅ

ADDITIONAL INFORMATION:

Worst Case Current Density:

Top Metallization:

<2.0 x 10 A/cm

Type: AlSiCu

Thickness: 16.0kÅ ± 2kÅ

Transistor Count:

125

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Metallization Mask Layout

HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH

GND (5)

GND (4)

IN A (2)

IN B (7)

OUT B (10)

OUT B (11)

OUT A (15)

OUT A (14)

(12)

(13)

For additional products, see www.intersil.com/en/products.html

Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted

in the quality certifications found at www.intersil.com/en/support/qualandreliability.html

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time

without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be

accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third

parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN4739.2

September 24, 2013

相关型号：