HS1-303BEH-Q [INTERSIL]

Radiation Hardened CMOS Dual SPDT Analog Switch;
HS1-303BEH-Q
型号: HS1-303BEH-Q
厂家: Intersil    Intersil
描述:

Radiation Hardened CMOS Dual SPDT Analog Switch

光电二极管
文件: 总5页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Radiation Hardened CMOS Dual SPDT Analog Switch  
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog  
switches are monolithic devices fabricated using Intersil’s  
Features  
• QML, Per MIL-PRF-38535  
• Radiation Performance  
dielectrically isolated Radiation Hardened Silicon Gate (RSG)  
process technology to insure latch-up free operation. They are  
pinout compatible and functionally equivalent to the  
HS-303RH, but offer improved 300kRAD(Si) total dose  
capability. These switches offers low-resistance switching  
performance for analog voltages up to the supply rails. “ON”  
resistance is low and stays reasonably constant over the full  
range of operating voltage and current. “ON” resistance also  
stays reasonably constant when exposed to radiation.  
Break-before-make switching is controlled by 5V digital inputs.  
The HS-303ARH should be operated with nominal ±15V  
supplies, while the HS-303BRH should be operated with  
nominal ±12V supplies.  
5
- Total Dose: 3x10 RAD(Si)  
2
- SEE: For LET = 60MeV-mg/cm at 60° Incident Angle,  
<150pC Charge Transferred to the Output of an Off Switch  
• No Latch-Up, Dielectrically Isolated Device Islands  
• Pinout and Functionally Compatible with Intersil HS-303RH  
and HI-303 Series Analog Switches  
• Analog Signal Range Equal to the Supply Voltage Range  
• Low Leakage. . . . . . . . . . . . . . . . . . . . .100nA (Max, Post-Rad)  
• Low r . . . . . . . . . . . . . . . . . . . . . . . . . . . 70(Max, Post-Rad)  
ON  
• Low Standby Supply Current. . . . . . . . . . . . . +150µA/-100µA  
(Max, Post-Rad)  
Specifications  
Specifications for Rad Hard QML devices are controlled by the  
Defense Supply Center in Columbus (DSCC). The SMD numbers  
listed below must be used when ordering.  
Detailed Electrical Specifications for the HS-303ARH,  
HS-303AEH, HS-303BRH, HS-303BEH are contained in  
SMD 5962-95813. A “hot-link” is provided from our website for  
downloading  
Functional Diagram  
Pin Configurations  
HS1-303ARH, HS-303BRH  
(SBDIP), CDIP2-T14  
TOP VIEW  
N
P
IN  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
NC  
S3  
D
D3  
D1  
S1  
TRUTH TABLE  
SW1 AND SW2  
OFF  
IN1  
GND  
LOGIC  
SW3 AND SW4  
8
V-  
0
1
ON  
ON  
OFF  
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
(FLATPACK) CDFP3-F14  
TOP VIEW  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
D3  
D1  
S1  
IN1  
GND  
8
December 12, 2012  
FN6411.2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2006, 2008, 2012. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
1
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
Ordering Information  
ORDERING NUMBER  
TEMP. RANGE  
PKG.  
(Note)  
PART NUMBER  
HS1-303ARH-8  
(°C)  
PKG.  
DWG. #  
5962F9581304QCC  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
14 LD SBDIP  
D14.3  
5962F9581304QXC  
5962F9581304V9A  
5962F9581306V9A  
5962F9581304VCC  
5962F9581306VCC  
5962F9581304VXC  
HS0-303ARH/SAMPLE  
HS1-303ARH/PROTO  
HS9-303ARH/PROTO  
5962F9581306VXC  
5962F9581305QCC  
5962F9581305QXC  
5962F9581305V9A  
5962F9581307V9A  
5962F9581305VCC  
5962F9581307VCC  
5962F9581305VXC  
HS0-303BRH/SAMPLE  
HS1-303BRH/PROTO  
HS9-303BRH/PROTO  
5962F9581307VXC  
HS9-303ARH-8  
14 LD Flatpack  
14 Ld SBDIP  
14 Ld SBDIP  
14 LD SBDIP  
14 LD SBDIP  
14 LD Flatpack  
K14.A  
D14.3  
D14.3  
D14.3  
D14.3  
K14.A  
HS0-303ARH-Q  
HS0-303AEH-Q  
HS1-303ARH-Q  
HS1-303AEH-Q  
HS9-303ARH-Q  
HS0-303ARH/SAMPLE  
HS1-303ARH/PROTO  
HS9-303ARH/PROTO  
HS9-303AEH-Q  
14 LD SBDIP  
14 LD Flatpack  
14 LD Flatpack  
14 LD SBDIP  
14 LD Flatpack  
14 LD SBDIP  
14 LD SBDIP  
14 LD SBDIP  
14 LD SBDIP  
14 LD Flatpack  
D14.3  
K14.A  
K14.A  
D14.3  
K14.A  
D14.3  
D14.3  
D14.3  
D14.3  
K14.A  
HS1-303BRH-8  
HS9-303BRH-8  
HS0-303BRH-Q  
HS0-303BEH-Q  
HS1-303BRH-Q  
HS1-303BEH-Q  
HS9-303BRH-Q  
HS0-303BRH/SAMPLE  
HS1-303BRH/PROTO  
HS9-303BRH/PROTO  
HS9-303BEH-Q  
14 LD SBDIP  
D14.3  
K14.A  
K14.A  
14 LD Flatpack  
14 LD Flatpack  
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with  
both SnPb and Pb-free soldering operations.  
FN6411.2  
December 12, 2012  
2
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
Substrate:  
Die Characteristics  
DIE DIMENSIONS:  
Radiation Hardened Silicon Gate,  
Dielectric Isolation  
2690µm x 5200µm (106mils x 205mils)  
Thickness: 483µm ± 25.4µm (19mils ± 1mil)  
Backside Finish:  
Silicon  
INTERFACE MATERIALS:  
Glassivation:  
ASSEMBLY RELATED INFORMATION:  
Substrate Potential:  
Type: PSG (Phosphorous Silicon Glass)  
Unbiased (DI)  
Thickness: 8.0kÅ ± 1.0kÅ  
Top Metallization:  
ADDITIONAL INFORMATION:  
Worst Case Current Density:  
Type: AlSiCu  
Thickness: 16.0kÅ ± 2kÅ  
5
2
<2.0 x 10 A/cm  
Transistor Count:  
196  
Metallization Mask Layout  
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
V-  
V+  
GND  
For additional products, see www.intersil.com/product_tree  
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted  
in the quality certifications found at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time  
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be  
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third  
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN6411.2  
December 12, 2012  
3
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)  
c1  
LEAD FINISH  
D14.3 MIL-STD-1835 CDIP2-T14 (D-1, CONFIGURATION C)  
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE  
-A-  
-D-  
E
INCHES  
MIN  
MILLIMETERS  
BASE  
METAL  
(c)  
SYMBOL  
MAX  
0.200  
0.026  
0.023  
0.065  
0.045  
0.018  
0.015  
0.785  
0.310  
MIN  
-
MAX  
5.08  
0.66  
0.58  
1.65  
1.14  
0.46  
0.38  
19.94  
7.87  
NOTES  
b1  
A
b
-
-
M
M
(b)  
0.014  
0.014  
0.045  
0.023  
0.008  
0.008  
-
0.36  
0.36  
1.14  
0.58  
0.20  
0.20  
-
2
-B-  
b1  
b2  
b3  
c
3
SECTION A-A  
S
S
S
D
bbb  
C
A - B  
-
D
4
BASE  
S2  
Q
PLANE  
2
A
-C-  
SEATING  
PLANE  
c1  
D
3
L
-
S1  
b2  
eA  
A A  
E
0.220  
5.59  
-
e
eA/2  
aaa  
M C A - B S D S  
b
c
e
0.100 BSC  
2.54 BSC  
-
eA  
eA/2  
L
0.300 BSC  
0.150 BSC  
7.62 BSC  
3.81 BSC  
-
ccc  
M
C A - B S D S  
-
NOTES:  
0.125  
0.200  
3.18  
0.38  
0.13  
0.13  
5.08  
-
1. Index area: A notch or a pin one identification mark shall be located ad-  
jacent to pin one and shall be located within the shaded area shown.  
The manufacturer’s identification shall not be used as a pin one identi-  
fication mark.  
Q
0.015  
0.005  
0.005  
0.060  
1.52  
5
S1  
S2  
α
-
-
-
-
6
7
2. The maximum limits of lead dimensions b and c or M shall be measured  
at the centroid of the finished lead surfaces, when solder dip or tin plate  
lead finish is applied.  
o
o
o
o
90  
105  
90  
-
105  
0.38  
0.76  
0.25  
0.038  
-
aaa  
bbb  
ccc  
M
N
-
-
-
-
0.015  
0.030  
0.010  
0.0015  
-
-
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension M  
applies to lead plating and finish thickness.  
-
-
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial  
-
2
lead paddle. For this configuration dimension b3 replaces dimension  
b2.  
14  
14  
8
5. Dimension Q shall be measured from the seating plane to the base plane.  
6. Measure dimension S1 at all four corners.  
Rev. 0 4/94  
7. Measure dimension S2 from the top of the ceramic body to the nearest  
metallization or lead.  
8. N is the maximum number of terminal positions.  
9. Braze fillets shall be concave.  
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.  
11. Controlling dimension: INCH.  
FN6411.2  
December 12, 2012  
4
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH  
Ceramic Metal Seal Flatpack Packages (Flatpack)  
K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)  
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE  
A
A
e
INCHES MILLIMETERS  
MIN  
PIN NO. 1  
ID AREA  
SYMBOL  
MAX  
0.115  
0.022  
0.019  
0.009  
0.006  
0.390  
0.260  
0.290  
-
MIN  
1.14  
0.38  
0.38  
0.10  
0.10  
-
MAX  
2.92  
0.56  
0.48  
0.23  
0.15  
9.91  
6.60  
7.11  
-
NOTES  
D
A
b
0.045  
0.015  
0.015  
0.004  
0.004  
-
-
-A-  
-B-  
S1  
-
b1  
c
-
-
b
c1  
D
E
-
E1  
3
0.004  
Q
H
A - B  
D
0.036  
H
A - B  
D
S
M
S
S
M
S
0.235  
-
5.97  
-
-
C
E
E1  
E2  
E3  
e
3
-D-  
A
0.125  
0.030  
3.18  
0.76  
-
-H-  
-C-  
-
-
7
L
E2  
L
E3  
E3  
0.050 BSC  
1.27 BSC  
-
SEATING AND  
BASE PLANE  
c1  
LEAD FINISH  
k
0.008  
0.270  
0.026  
0.005  
-
0.015  
0.370  
0.045  
-
0.20  
6.86  
0.66  
0.13  
-
0.38  
9.40  
1.14  
-
2
L
-
BASE  
METAL  
Q
S1  
M
N
8
(c)  
6
b1  
0.0015  
0.04  
-
M
M
(b)  
14  
14  
-
SECTION A-A  
Rev. 0 5/18/94  
NOTES:  
1. Index area: A notch or a pin one identification mark shall be located ad-  
jacent to pin one and shall be located within the shaded area shown.  
The manufacturer’s identification shall not be used as a pin one identi-  
fication mark. Alternately, a tab (dimension k) may be used to identify  
pin one.  
2. If a pin one identification mark is used in addition to a tab, the limits of  
dimension k do not apply.  
3. This dimension allows for off-center lid, meniscus, and glass overrun.  
4. Dimensions b1 and c1 apply to lead base metal only. Dimension M ap-  
plies to lead plating and finish thickness. The maximum limits of lead  
dimensions b and c or M shall be measured at the centroid of the fin-  
ished lead surfaces, when solder dip or tin plate lead finish is applied.  
5. N is the maximum number of terminal positions.  
6. Measure dimension S1 at all four corners.  
7. For bottom-brazed lead packages, no organic or polymeric materials  
shall be molded to the bottom of the package to cover the leads.  
8. Dimension Q shall be measured at the point of exit (beyond the menis-  
cus) of the lead from the body. Dimension Q minimum shall be reduced  
by 0.0015 inch (0.038mm) maximum when solder dip lead finish is  
applied.  
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.  
10. Controlling dimension: INCH.  
FN6411.2  
December 12, 2012  
5

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