IRFF320 [INTERSIL]
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET; 2.5A ， 400V ， 1.800 Ohm的N通道功率MOSFET
| 型号： | IRFF320 |
| 厂家： | 
Intersil |
| 描述： | 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFF320
Data Sheet
March 1999
File Number 1890.4
2.5A, 400V, 1.800 Ohm, N-Channel
Power MOSFET
Features
• 2.5A, 400V
• r = 1.800Ω
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17404.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
IRFF320
D
IRFF320
TO-205AF
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-205AF
SOURCE
DRAIN
(CASE)
GATE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
IRFF320
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
IRFF320
400
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
2.5
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
10
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
20
V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
20
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.16
100
W/ C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
mJ
AS
o
Operating and Storage Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
J
-55 to 150
C
STG
Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0V, I = 250µA (Figure 10)
MIN
TYP
-
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
V
V
V
V
V
V
V
V
V
400
DSS
GS
GS
DS
DS
DS
GS
GS
DS
DD
D
I
=
20V
-
-
100
25
nA
µA
µA
A
GSS
I
= Rated BV
, V
DSS GS
= 0V
-
-
DSS
o
= 0.8 x Rated BV
DSS GS
> I x r , V = 10V (Figure 7)
DS(ON)MAX GS
, V
= 0V, T = 125 C
-
-
250
-
J
On-State Drain Current (Note 2)
Gate to Threshold Voltage
I
2.5
-
D(ON)
GS(TH)
DS(ON)
D(ON)
V
= V , I = 250µA
2.0
-
4.0
1.800
-
V
DS
D
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
= 10V, I = 1.25A (Figures 8, 9)
-
1.5
2.2
20
25
50
25
12
Ω
D
g
≥ 10V, I = 2.0A (Figure 12)
1.7
S
fs
D
t
= 0.5 x Rated BV
DSS
, I ≈ 2.5A, R = 9.1Ω,
-
-
-
-
-
40
ns
ns
ns
ns
nC
d(ON)
D
G
V
= 10V, R = 78.2Ω For V
= 200V,
GS
L
DSS
Rise Time
t
50
r
R
= 68.2Ω For V
= 175V (Figures 17, 18),
L
DSS
Turn-Off Delay Time
t
100
50
d(OFF)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Fall Time
t
f
Total Gate Charge
Q
V
= 10V, I = 2.5A, V
= 0.8 x Rated BV
DSS
,
15
g(TOT)
GS
D
DS
(Gate to Source + Gate to Drain)
I
= 1.5mA (Figures 14, 19, 20) Gate Charge is
G(REF)
Essentially Independent of Operating Temperature
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
Q
-
-
-
-
-
-
6.0
6.0
450
100
20
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gs
gd
C
V
= 0V, V
= 25V, f = 1.0MHz (Figure 11)
DS
ISS
GS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
Internal Drain Inductance
C
RSS
L
Measured from the Drain Modified MOSFET
Lead, 5mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
5.0
D
S
Inductances
Internal Source Inductance
L
Measured from the
-
15
-
nH
Source Lead, 5mm
D
(0.2in) from Header to
Source Bonding Pad
L
L
D
S
G
S
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
6.25
175
C/W
θJC
o
Free Air Operation
C/W
θJA
2
IRFF320
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Modified MOSFET
MIN
TYP
MAX
2.5
UNITS
Continuous Source to Drain Current
I
-
-
-
-
A
A
SD
D
S
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
Pulse Source to Drain Current
(Note 3)
I
10
SDM
G
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
T = 25 C, I
J
= 2.5A, V
GS
= 0V (Figure 13)
-
-
-
-
1.6
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 2.5A, dI /d = 100A/µs
SD
450
3.1
-
-
ns
µC
rr
t
o
Q
T = 25 C, I
= 2.5A, dI /d = 100A/µs
SD
RR
J
t
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 40V, starting T = 25 C, L = 29.09mH, R = 50Ω, peak I = 2.5A (Figures 15, 16).
J G AS
DD
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
25
50
75
, CASE TEMPERATURE ( C)
C
100
125
150
o
o
T , CASE TEMPERATURE ( C)
T
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
0.2
P
DM
0.1
1.0
0.1
t
1
0.05
t
2
0.02
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
+ T
θJC C
J
DM
SINGLE PULSE
-5
10
-4
10
-3
10
-2
10
0.1
1
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
IRFF320
Typical Performance Curves Unless Otherwise Specified (Continued)
20
10
6
5
4
3
2
1
0
V
= 6V
GS
80µs PULSE TEST
V
= 10V
GS
10µs
V
= 5.5V
= 5V
GS
100µs
1
0.1
1ms
V
GS
OPERATION IN THIS
REGION IS LIMITED
10ms
BY r
DS(ON)
100ms
V
= 4.5V
= 4V
GS
DC
o
T
T
= 25 C
C
J
V
GS
= MAX RATED
SINGLE PULSE
0.01
2
3
0
100
200
300
1
10
10
10
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5
4
3
2
1
0
6
5
80µs PULSE TEST
V
= 6V
V
> I
DS D(ON)
x r
DS(ON)MAX
GS
V
= 10V
GS
80µs PULSE TEST
V
= 5.5V
GS
4
V
= 5V
GS
3
2
1
0
V
= 4.5V
o
GS
T
= 125 C
J
o
T
= 25 C
J
o
T
= -55 C
J
V
= 4V
GS
0
1
2
3
4
5
6
0
4
8
12
16
20
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
6
I
= 1.25A
2µs PULSE TEST
D
2.2
V
= 10V
GS
5
4
3
2
1
0
1.8
1.4
V
= 10V
GS
V
= 20V
GS
1.0
0.6
0.2
-40
0
40
80
120
160
0
2
4
6
8
10
12
o
I
, DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
D
J
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4
IRFF320
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
1000
800
600
400
200
0
I
= 250µA
V
C
C
C
= 0V, f = 1MHz
D
GS
ISS
= C + C
GS GD
= C
GD
RSS
OSS
≈ C + C
DS
GS
C
ISS
C
OSS
C
RSS
-40
0
40
80
120
o
160
0
10
20
30
40
50
T , JUNCTION TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
J
DS
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
100
80µs PULSE TEST
80µs PULSE TEST
o
5
T
= 25 C
J
o
= -55 C
T
J
o
4
T
= 150 C
J
o
T
= 25 C
J
3
2
10
o
T
= 125 C
J
o
T
= 150 C
J
1
0
o
T
= 25 C
J
1.0
0
1
2
3
4
0
1
2
3
4
5
6
I , DRAIN CURRENT (A)
V
, SOURCE TO DRAIN VOLTAGE (V)
SD
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 2.5A
D
V
= 80V
= 200V
= 320V
DS
15
10
V
DS
V
DS
5
0
0
4
8
12
16
20
Q
, TOTAL GATE CHARGE (nC)
g(TOT)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
IRFF320
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
AS
G
V
DD
-
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
I
G(REF)
0
V
I
DS
G(REF)
I
CURRENT
I
CURRENT
G
D
SAMPLING
RESISTOR
SAMPLING
RESISTOR
0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6
IRFF320
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7
相关型号：
IRFF320PBF
Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
INFINEON
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