IS-2981RH [INTERSIL]

Radiation Hardened 8-Channel Source Driver; 抗辐射8通道源驱动器
IS-2981RH
型号: IS-2981RH
厂家: Intersil    Intersil
描述:

Radiation Hardened 8-Channel Source Driver
抗辐射8通道源驱动器

驱动器
文件: 总2页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS-2981RH  
TM  
Data Sheet  
June 2000  
File Number 4869.1  
Radiation Hardened 8-Channel Source  
Driver  
Features  
• Electrically Screened to SMD # 5962-00520  
The Star*Power Radiation Hardened  
IS-2981RH is a monolithic device  
• QML Qualified Per MIL-PRF-38535 Requirements  
TM  
• Radiation Environment  
designed for use in high-side  
switching applications that benefit  
- Single Event Latch-up Immune. . . . . . . . . . . DI Process  
5
from separate grounds for the logic and loads. The device  
has a 5V to 80V operating supply voltage range and is  
capable of sourcing -200mA continuously from each output.  
The outputs are controlled by active-high inputs and may be  
paralleled to increase the drive current. Output clamp diodes  
prevent device damage, when switching inductive loads.  
- Total Dose. . . . . . . . . . . . . . . . . . . 1 x 10 rad(Si) (Max)  
• Input Voltage Range. . . . . . . . . . . 0.0V to V  
(20V Max)  
CC  
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . . 5V to 80V  
Turn-on Delay Time . . . . . . . . . . . . . . . . . . . . . .2µs (Max)  
Turn-off Delay Time . . . . . . . . . . . . . . . . . . . . .11µs (Max)  
Constructed with the Intersil bonded wafer, dielectrically  
isolated HVTDLM process, these single event latch-up  
immune devices have been specifically designed to provide  
highly reliable performance in harsh radiation environments.  
They are fully guaranteed for 100krad(Si) total dose  
performance through wafer-by-wafer radiation testing, and  
are production tested over the full military temperature  
range.  
• Output Clamp Diode, V . . . . . . . . . . . . . . . -1.75V (Max)  
F
Applications  
• Drivers for Various Loads  
- Relays, Solenoids and Motors  
• Reliable Replacement of Discrete Solutions  
• Interfacing Between Low-Level Logic and High-Current  
Loads  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
Pinout  
IS1-2981RH-Q  
(CDIP2-T18, SBDIP)  
TOP VIEW  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-00520. A “hot-link” is provided  
on our homepage for downloading.  
www.intersil.com/spacedefense/space.htm  
1
2
3
4
5
6
7
8
9
18  
17  
IN 1  
IN 2  
IN 3  
IN 4  
IN 5  
IN 6  
IN 7  
IN 8  
OUT 1  
OUT 2  
Ordering Information  
16 OUT 3  
15 OUT 4  
14 OUT 5  
13 OUT 6  
INTERNAL MKT.  
NUMBER  
TEMP. RANGE  
o
ORDERING NUMBER  
5962R0052001VVC  
5962R0052001QVC  
IS1-2981RH/Proto  
( C)  
IS1-2981RH-Q  
IS1-2981RH-8  
-55 to 125  
-55 to 125  
-55 to 125  
12  
11  
10  
OUT 7  
OUT 8  
GND  
IS1-2981RH/Proto  
V
CC  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1
IS-2981RH  
Die Characteristics  
DIE DIMENSIONS:  
Substrate  
2667µm x 5131µm (105 mils x 202 mils)  
HVTDLM, Bonded Wafer, Dielectric Isolation  
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)  
Backside Finish  
INTERFACE MATERIALS  
Glassivation  
Silicon  
ASSEMBLY RELATED INFORMATION  
Type: Nitride (Si N ) over Silox (SiO )  
Nitride Thickness: 4.0kÅ ± 1.0kÅ  
Silox Thickness: 12.0kÅ ± 4.0kÅ  
3
4
2
Substrate Potential  
Must be tied to GND.  
ADDITIONAL INFORMATION  
Worst Case Current Density  
Metallization  
Top Metal 2: Ti/AlCu  
5
2
Thickness: 1.6µm ± 0.02µm  
Metal 1: Ti/AlCu  
Thickness: 0.8µm ± 0.01µm  
<1.0 x 10 A/cm  
Transistor Count  
68  
Metallization Mask Layout  
IS-2981RH  
5
8
7
6
4
3
2
1
9
9
9
9
10  
10A  
10  
11  
12  
13  
14  
15  
16  
17  
18  
NOTES:  
1. Pad numbers correspond to package pin functions.  
2. Bond to all four pad 9 locations for V current sharing purposes.  
CC  
3. Bond to both pad 10 locations for GND current sharing purposes.  
4. Pad 10A is not used in die applications.  
5. Die backside must be connected to GND.  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
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