IS9-2100ARH-8 [INTERSIL]

Radiation Hardened High Frequency Half Bridge Driver; 抗辐射高频半桥驱动器


型号：	IS9-2100ARH-8
厂家：	Intersil
描述：	Radiation Hardened High Frequency Half Bridge Driver 抗辐射高频半桥驱动器驱动器
文件：	总2页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IS-2100ARH

Data Sheet

April 2003

FN9037.1

Radiation Hardened High Frequency

Half Bridge Driver

Features

• Electrically Screened to DSCC SMD # 5962-99536

• QML Qualified per MIL-PRF-38535 Requirements

The Radiation Hardened IS-2100ARH is a high frequency,

130V Half Bridge N-Channel MOSFET Driver IC, which is

functionally similar to industry standard 2110 types. The low-

side and high-side gate drivers are independently controlled.

This gives the user maximum flexibility in dead-time

selection and driver protocol.

• Radiation Environment

- Maximum Total Dose . . . . . . . . . . . . . . . . . 300krad(SI)

- DI RSG Process Provides Latch-up Immunity

- SEU Rating. . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm

- Vertical Device Architecture Reduces Sensitivity to Low

Dose Rates

In addition, the device has on-chip error detection and

correction circuitry, which monitors the state of the high-side

latch and compares it to the HIN signal. If they disagree, a

set or reset pulse is generated to correct the high-side latch.

This feature protects the high-side latch from single event

upsets (SEUs).

• Bootstrap Supply Max Voltage to 150V

• Drives 1000pF Load at 1MHz with Rise and Fall Times of

30ns (Typ)

• 1.5A (Typ) Peak Output Current

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

• Independent Inputs for Non-Half Bridge Topologies

• Low DC Power Consumption. . . . . . . . . . . . . 60mW (Typ)

Detailed Electrical Specifications for the IS-2100ARH are

contained in SMD 5962-99536. A “hotlink” is provided

on our website for downloading.

• Operates with V

= V Over 12V to 20V Range

• Low-side Supply Undervoltage Protection

Applications

Ordering Information

• High Frequency Switch-Mode Power Supplies

• Drivers for Inductive Loads

• DC Motor Drivers

INTERSIL MKT.

NUMBER

TEMP.

ORDERING NUMBER

5962F9953602VXC

5962F9953602QXC

IS9-2100ARH/Proto

RANGE ( C)

-55 to 125

IS9-2100ARH-Q

IS9-2100ARH-8

Pinout

IS9-2100ARH/Proto -55 to 125

IS-2100ARH

FLATPACK (CDFP4-F16)

TOP VIEW

COM

LIN

HIN

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

IS-2100ARH

Die Characteristics

DIE DIMENSIONS:

Backside Finish:

4820µm x 3300µm (190 mils x 130 mils)

Thickness: 483µm ±25.4µm (19 mils ±1 mil)

Silicon

ASSEMBLY RELATED INFORMATION:

INTERFACE MATERIALS:

Glassivation:

Substrate Potential:

Unbiased (DI)

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ ±1.0kÅ

ADDITIONAL INFORMATION:

Worst Case Current Density:

Top Metallization:

<2.0 x 10 A/cm

Type: ALSiCu

Thickness: 16.0kÅ ±2kÅ

Transistor Count:

542

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Metallization Mask Layout

IS-2100ARH

SD (13)

HIN (12)

LIN (14)

(15)

(11)

HO (8)

VB (7)

LO (1)

COM (2)

(3)

VS (6)

All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.

However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its

use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

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