ISL71840SEHVF [INTERSIL]
Radiation Hardened 30V 16-Channel Analog;
| 型号： | ISL71840SEHVF |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened 30V 16-Channel Analog CD |
| 文件： | 总27页 (文件大小：1125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATASHEET
Radiation Hardened 30V 16-Channel Analog
Multiplexer
ISL71840SEH
Features
The ISL71840SEH is a radiation hardened, 16-channel high
ESD protected multiplexer that is fabricated using Intersil’s
proprietary P6SOI (Silicon On Insulator) process technology to
mitigate single-event effects and total ionizing dose. It
operates with a dual supply voltage ranging from ±10.8V to
±16.5V. It has a 4-bit address plus an enable pin that can be
driven with adjustable logic thresholds to conveniently select 1
of 16 available channels. An inactive channel is separated
from an active channel by a high impedance, which inhibits
any interaction between them.
• DLA SMD# 5962-15219
• Fabricated using P6SOI process technology
- Provides latch-up immunity
• ESD protection 8kV (HBM)
• Rail-to-rail operation
• Overvoltage protection
• Low rON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typical)
• Flexible split rail operation
- Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V
- Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V
The ISL71840SEH’s low rON allows for improved signal
integrity and reduced power losses. The ISL71840SEH is also
designed for cold sparing making it excellent for high reliability
applications that have redundancy requirements. It is
designed to provide a high impedance to the analog source in
a powered off condition, making it easy to add additional
backup devices without loading signal sources. The
ISL71840SEH also incorporates input analog overvoltage
protection, which will disable the switch to protect downstream
devices.
• Adjustable logic threshold control with VREF pin
• Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V
• Analog overvoltage range (from ground). . . . . . . . . . . . .±35V
• Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)
• Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical)
• Break-before-make switching
The ISL71840SEH is available in a 28 Ld CDFP or die form and
operates across the extended temperature range of -55°C to
+125°C.
• Grounded metal lid (internally connected)
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
There is also a 32-channel version available offered in a 48 Ld
CQFP, please refer to the ISL71841SEH datasheet for more
information. For a list of differences please refer to Table 1 on
page 3.
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . 100krad(Si) (see Note)
- SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg
NOTE: Product capability established by initial characterization. All
subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)
wafer-by-wafer.
Related Literature
• UG028, “ISL71840SEHEV1Z Evaluation Board User Guide”
• TR004, “Single Event Effects (SEE) Testing of the
ISL71840SEH 16:1 30V Mux”
• TR010, “Total Dose Testing of the ISL71840SEH 16-Channel
Analog Multiplexer”
600
ISL71840SEH
500
IN01
IN02
IN03
+125°C
+25°C
400
300
200
100
0
OUT
ADC
.
.
.
IN16
4
-55°C
-10
ADDRESS
-20
-15
-5
0
5
10
15
20
EN
SWITCH INPUT VOLTAGE (V)
FIGURE 2. rDS(ON) vs POWER SUPPLY ACROSS SWITCH INPUT
COMMON-MODE VOLTAGE AT +25°C
FIGURE 1. TYPICAL APPLICATION
June 9, 2016
FN8734.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015, 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
1
ISL71840SEH
Table of Contents
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications (±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications (±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Post High Dose Rate Radiation Characteristics (V± = ±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Post High Dose Rate Radiation Characteristics (V± = ±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Post Low Dose Rate Radiation Characteristics (V± = ±15V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Post Low Dose Rate Radiation Characteristics (V± = ±12V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Power-Up Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
VREF and Logic Functionality. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
ISL71840SEH vs ISL71841SEH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Metalization Mask Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Ceramic Metal Seal Flatpack Packages (Flatpack) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
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ISL71840SEH
Ordering Information
ORDERING/SMD NUMBER
PART NUMBER
TEMP RANGE
(°C)
PACKAGE
(RoHS COMPLIANT)
PKG.
DWG. #
(Note 2)
(Note 1)
5962R1521901VXC
ISL71840SEHVF
-55 to +125
-55 to +125
28 LD CDFP
28 LD CDFP
K28.A
K28.A
N/A
ISL71840SEHF/PROTO
ISL71840SEHVX
5962R1521901V9A
-55 to +125
DIE
DIE
N/A
ISL71840SEHX/SAMPLE
ISL71840SEHEV1Z
-55 to +125
N/A
Evaluation Board
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
TABLE 1. TABLE OF DIFFERENCES
SPECIFICATION
Number of Channels
ISL71840SEH
16
ISL71841SEH
32
Supply Current (I+/I-)
350µA (Maximum)
60nA (Maximum)
400µA (Maximum)
120nA (Maximum)
Output Leakage (+125°C)
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ISL71840SEH
Pin Configuration
ISL71840SEH
(28 LD CDFP)
TOP VIEW
V+
NC
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VOUT
V-
2
NC
IN08
IN07
IN06
IN05
IN04
IN03
IN02
IN01
EN
3
IN16
IN15
IN14
IN13
IN12
IN11
IN10
IN09
GND
VREF
A3
4
5
6
7
8
9
10
11
12
13
14
A0
A1
A2
Pin Descriptions
PIN NAME
PIN NUMBER
DESCRIPTION
VOUT
V+
28
1
Output for multiplexer
Positive power supply
Negative power supply
Not electrically connected
V-
27
2, 3
NC
INx
4, 5, 6, 7, 8, 9, 10, 11, 19, 20, 21, Input for multiplexer
22, 23, 24, 25, 26
Ax
EN
14, 15, 16, 17
Address lines for multiplexer
Enable control for multiplexer (active low)
18
13
VREF
GND
LID
Reference voltage used to set logic thresholds
Ground
12
N/A
Package lid is internally connected to GND (Pin 12)
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ISL71840SEH
Absolute Maximum Ratings
Thermal Information
Positive Supply Voltage Above GND (V+) (Note 5). . . . . . . . . . . . . . . . . +20V
Negative Supply Voltage Below GND (V-) (Note 5 . . . . . . . . . . . . . . . . . .-20V
Maximum Supply Voltage Differential (V+ to V-) (Note 5) . . . . . . . . . . . 40V
Maximum Current Through Selected Switch. . . . . . . . . . . . . . . . . . . . 10mA
Analog Input Voltage (INx)
From GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Digital Input Voltage Range (EN, Ax) . . . . . . . . . . . . . . . . . . . . . . . . GND to V+
VREF to GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5V
ESD Tolerance
Thermal Resistance (Typical)
28 Ld CDFP (Notes 3, 4) . . . . . . . . . . . . . . .
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
JA (°C/W)
JC (°C/W)
4
48
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Positive Supply Voltage Above GND (V+) . . . . . . . . . . . . . +10.8V to +16.5V
Negative Supply Voltage Below GND (V-). . . . . . . . . . . . . . .-10.8V to -16.5V
Supply Voltage Differential (V+ to V-) . . . . . . . . . . . . . . . . . . . . 21.6V to 33V
VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V
Human Body Model (Tested per MIL-STD-883 TM 3015) . . . . . . . . . 8kV
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 250V
Machine Model (Tested per JESD22-A115-A). . . . . . . . . . . . . . . . . . 250V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For JC, the “case temp” location is the center of the package underside.
5. Tested in a heavy ion environment at LET = 86.3MeV•cm2/mg at +125°C.
+
-
Electrical Specifications (±15V) V = 15V, V = -15V, V = 4V, V = 0.8V, V = VEN = 5V, T = +25°C, unless otherwise noted.
AH
AL
REF
A
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
MIN
MAX
SYMBOL
VS
PARAMETER
Analog Input Signal Range
Channel ON-Resistance
TEST CONDITIONS
(Note 6)
TYP
(Note 6)
UNIT
V
V-
-
-
-
V+
rON
V± = ±15.0V, ±16.5V
OUT = -1mA, VIN = +5V, -5V
500
Ω
I
V± = ±15.0V, ±16.5V
OUT = -1mA, VIN = V+, V-
-
-
700
Ω
I
ΔrON
RFLAT(ON)
IS(OFF)
rON Match Between Channels
ON-Resistance Flatness
Switch Off Leakage
VIN = +5V, -5V; IOUT = -1mA
VIN = +5V, -5V
-
-
10
20
25
10
Ω
Ω
-
-
VIN = V+ - 5V, V± = ±16.5V,
All unused inputs are tied to V- + 5V
-10
nA
Post radiation
-100
-10
-
-
100
10
nA
nA
V
IN = V- + 5V, V± = ±16.5V
All other inputs = V+ - 5V
TA = +25°C
TA = +125°C
Post radiation
-20
-100
-10
-
-
-
20
100
10
nA
nA
nA
IS(OFF) POWER OFF Switch Off Leakage with Device
Powered Off
VIN = +25V, V± = VEN = VA = VREF = 0V
TA = +25°C, V± = 0V
TA = -55°C, +125°C
Post radiation
-10
-100
-10
-
-
-
80
100
10
nA
nA
nA
V
IN = -25V, V± = VEN = VA = VREF = 0V
TA = +25°C, V± = 0V
TA = -55°C, +125°C
Post radiation
-80
-
-
10
nA
nA
-100
100
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ISL71840SEH
+
-
Electrical Specifications (±15V) V = 15V, V = -15V, V = 4V, V = 0.8V, V = VEN = 5V, T = +25°C, unless otherwise noted.
AH
AL
REF
A
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
MIN
MAX
SYMBOL
PARAMETER
TEST CONDITIONS
(Note 6)
TYP
-
(Note 6)
UNIT
nA
IS(OFF) POWER OFF Switch Off Leakage with Device
Powered Off
VIN = +25V, VEN/VA/VREF = 0V
V± = OPEN, TA = +25°C
-10
10
TA = -55°C, +125°C
Post radiation
-10
-100
-10
-
-
-
80
100
10
nA
nA
nA
V
IN = -25V, VEN/VA/VREF = 0V
V± = OPEN, TA = +25°C
TA = -55°C, +125°C
Post radiation
-80
-100
-10
-
-
-
10
100
10
nA
nA
nA
IS(ON) OVERVOLT Switch On Leakage Current Into the
Source (overvoltage)
VIN = +35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND, V± = ±16.5V
TA = +125°C
Post radiation
-80
-500
-10
-
-
-
80
500
10
nA
nA
nA
V
IN = -35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND, V± = ±16.5V
TA = +125°C
-20
-500
-10
-
-
-
20
500
10
nA
nA
nA
Post radiation
IS(OFF) OVERVOLT Switch Off Leakage Current Into the
Source (overvoltage)
VIN = +35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND, V± = ±16.5V
TA = +125°C
Post radiation
-80
-750
-10
-
-
-
80
750
10
nA
nA
nA
V
IN = -35V, VOUT = 0V, TA = +25°C, -55°C
All unused switch inputs = GND, V± = ±16.5V
TA = +125°C
-20
-750
-10
-
-
-
20
750
10
nA
nA
nA
Post radiation
ID(OFF)
Switch Off Leakage
VOUT = V+ - 5V, All inputs = V- + 5V
V± = ±16.5V, TA = +25°C, -55°C
TA = +125°C
Post radiation
0
-
-
-
60
80
10
nA
nA
nA
-80
-10
V
OUT = V- + 5V, All inputs = V+ - 5V
V± = ±16.5V, TA = +25°C, -55°C
TA = +125°C
-60
-80
-10
-
-
-
0
nA
nA
nA
Post radiation
80
10
ID(OFF) OVERVOLT Switch Off Leakage Current Into the
Drain (overvoltage)
VOUT = 0V, VIN = +35V, V± = ±16.5V
All unused inputs are tied to GND
Post radiation
-500
-10
-
-
500
10
nA
nA
VOUT = 0V, VIN = -35V, V± = ±16.5V
All unused inputs are tied to GND
Post radiation
-500
-
500
nA
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ISL71840SEH
+
-
Electrical Specifications (±15V) V = 15V, V = -15V, V = 4V, V = 0.8V, V = VEN = 5V, T = +25°C, unless otherwise noted.
AH
AL
REF
A
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
MIN
MAX
SYMBOL
ID(ON)
PARAMETER
TEST CONDITIONS
(Note 6)
TYP
-
(Note 6)
UNIT
nA
Switch On Leakage Current Into the
Source/Drain
VIN = VOUT = V+ - 5V, TA = +25°C, -55°C
All unused inputs = V- + 5V, V± = ±16.5V
-10
10
TA = +125°C
Post radiation
0
-
-
-
60
100
10
nA
nA
nA
-100
-10
V
IN = VOUT = V- + 5V, TA = +25°C, -55°C
All unused inputs = V -+ 5V, V± = ±16.5V
TA = +125°C
-60
-100
1.2
-
-
-
-
0
nA
nA
V
Post radiation
100
1.6
100
V
AH/L, VENH/L
Logic Input High/Low Voltage
Input Current with VAH, VENH
VREF = 5.0V
I
AH, IENH
VA = VEN = 4.0V
V+ = 16.5V, V- = -16.5V
-100
nA
I
AL, IENL
Input Current with VAL, VENL
VA = VEN = 0.8V
V+ = 16.5V, V- = -16.5V
-100
-
100
nA
I+
I-
Quiescent Supply Current
Quiescent Supply Current
Standby Supply Current
Standby Supply Current
Supply Current Into VREF
VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V
-
-
-
-
-
-
350
µA
µA
µA
µA
µA
VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V
VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V
VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V
-350
-
350
-
I+
-
-350
-
I-
IREF
VREF = 5.5V, VIN = VA = VEN = 0.8V,
V± = ±15.0V, ±16.5V
35
DYNAMIC
tALH
Transition Time
Figures 4, 5
-
0.5
0.5
50
-
800
800
200
400
600
800
600
800
5
ns
ns
ns
ns
ns
ns
ns
ns
pC
dB
tAHL
Transition Time
Figures 4, 5
-
5
5
-
tBBM
Break-Before-Make Delay
Figures 8, 9, TA = -55°C, +25°C, +125°C
Post radiation
tENABLE
Enable Turn-On Time
Disable Turn-Off Time
Figures 6, 7, TA = -55°C, +25°C, +125°C
Post radiation
0.5
-
-
tDISABLE
Figures 6, 7, TA = -55°C, +25°C, +125°C
Post radiation
-
0.5
-
-
VCTE
VISO
Charge Injection
OFF Isolation
CL = 100pF, VIN = 0V, Figure 6
VEN = 4V, RL = 1kΩ, f = 200kHz, CL = 7pF,
-
2
75
-
-
V
RMS = 3V
VCT
Crosstalk
VEN = 0.8V, RL = 1kΩ, f = 200kHz, CL = 7pF,
47
-
-
dB
V
RMS = 3V
CA
Digital Input Capacitance
Input Capacitance
f = 1MHz, V+ = V- = 0V
f = 1MHz, V+ = V- = 0V
f = 1MHz, V+ = V- = 0V
-
-
-
-
-
-
7
5
pF
pF
pF
CIN(OFF)
COUT(OFF)
Output Capacitance
50
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ISL71840SEH
+
-
Electrical Specifications (±12V) V = 12V, V = -12V, V = 4.0V, V = 0.8V, V = VEN = 5.0V, T = +25°C, unless otherwise noted.
AH
AL
REF
A
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high
dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
MIN
MAX
SYMBOL
VS
PARAMETER
Analog Input Signal Range
Channel ON-Resistance
TEST CONDITIONS
(Note 6)
TYP
(Note 6)
UNIT
V
V-
-
V+
rON
V± = ±10.8V, ±13.2V
OUT = -1mA, VIN = +5V, -5V
-
-
500
Ω
I
V± = ±10.8V, ±13.2V
IOUT = -1mA, VIN = V+, V-
-
700
Ω
ΔrON
rON Match Between Channels
ON-Resistance Flatness
VIN = +5V, -5V; IOUT = -1mA
VIN = +5V, -5V, V± = ±13.2V
-
-
-
10
20
25
30
Ω
Ω
Ω
RFLAT(ON)
-
-
V
IN = +5V, -5V, V± = ±10.8V
TA = +25°C, -55°C, +125°C
V
IN = +5V, -5V, V± = ±10.8V, post radiation
IN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V
-
-
-
-
-
-
-
40
350
-
Ω
I+
I-
Quiescent Supply Current
Quiescent Supply Current
Standby Supply Current
Standby Supply Current
Supply Current Into VREF
V
-
µA
µA
µA
µA
µA
VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V
-350
I+
V
IN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V
IN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V
-
-350
-
350
-
I-
V
IREF
VREF = 5.5V, VIN = VA = VEN = 0.8V,
V± = ±10.8V, ±13.2V
35
DYNAMIC
tALH
tAHL
tBBM
Transition Time
Figures 4, 5
-
-
0.5
0.5
50
-
800
800
200
400
600
800
600
800
ns
ns
ns
ns
ns
ns
ns
ns
Transition Time
Figures 4, 5
Break-Before-Make Delay
Figures 8, 9, TA = -55°C, +25°C, +125°C
Post radiation
5
-
tENABLE
Enable Turn-On Time
Disable Turn-Off Time
Figures 6, 7, TA = -55°C, +25°C, +125°C
Post radiation
-
0.5
-
-
tDISABLE
Figures 6, 7, TA = -55°C, +25°C, +125°C
Post radiation
-
0.5
-
-
NOTE:
6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
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ISL71840SEH
TABLE 2. TRUTH TABLE
A3
X
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
A2
X
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
A1
X
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
A0
X
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
EN
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
“ON” Channel
None
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NOTE:
7. Don’t care, “1” = Logic High, “0” = Logic Low.
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ISL71840SEH
Block Diagram
V+
IN1
A0
A1
A2
1
OUT
A3
IN16
16
EN
DECODERS
ADDRESS INPUT BUFFER
AND LEVEL SHIFTER
V-
MULTIPLEX SWITCHES
FIGURE 3. BLOCK DIAGRAM
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ISL71840SEH
Timing Diagrams
4V
“1111”
ISL71840SEH
A3
A2
A1
A0
IN01
IN02-IN15
IN16
+15V, 0V
0V, +15V
ADDRESS
50%
50%
+4.0V
+0.8V
50Ω
“0000”
0.8V
15V
EN
OUT
+0.8V
VOUT
50pF
tAHL
tALH
OUTPUT
0V
50%
50%
10kΩ
FIGURE 5. ADDRESS TIME TO OUTPUT DIAGRAM
FIGURE 4. ADDRESS TIME TO OUTPUT TEST CIRCUIT
ISL71840SEH
4V
+10V
A3
A2
A1
A0
IN01
IN02-IN16
ENABLE
50%
50%
0.8V
10V
EN
OUT
VOUT
50pF
tDISABLE
tENABLE
OUTPUT
0V
50%
50%
+4.0V
+0.8V
1kΩ
50Ω
FIGURE 6. TIME TO ENABLE/DISABLE OUTPUT TEST CIRCUIT
FIGURE 7. TIME TO ENABLE/DISABLE OUTPUT DIAGRAM
4V
ISL71840SEH
ADDRESS
A3
A2
A1
A0
IN01
IN02-IN15
IN16
+5V
+4.0V
+0.8V
0.8V
5V
50Ω
50%
+0.8V
OUT
VOUT
50pF
OUT
0V
1kΩ
tBBM
FIGURE 9. BREAK-BEFORE-MAKE DIAGRAM
FIGURE 8. BREAK-BEFORE-MAKE TEST CIRCUIT
4V
ISL71840SEH
0V
A3
A2
A1
A0
IN01
IN02-IN15
IN16
ADDRESS
+4.0V
+0.8V
50Ω
0.8V
15V
Q = 100pF * ΔVOUT
ΔVOUT
+0.8V
EN
OUT
VOUT
OUT
0V
100pF
FIGURE 11. CHARGE INJECTION DIAGRAM
FIGURE 10. CHARGE INJECTION TEST CIRCUIT
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Typical Performance Curves V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified.
600
500
400
300
200
100
0
600
500
400
300
200
100
0
+125°C
+125°C
+25°C
+25°C
-55°C
-10
-55°C
-10
-20
-15
-5
0
5
10
15
20
-20
-15
-5
0
5
10
15
20
SWITCH INPUT VOLTAGE (V)
SWITCH INPUT VOLTAGE (V)
FIGURE 12. rDS(ON) vs VCM (V± = 14.5V)
FIGURE 13. rDS(ON) vs VCM (V± = 15.0V)
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
+125°C
+25°C
+125°C
+25°C
-55°C
-55°C
-15
-20
-10
-5
0
5
10
15
20
-15
-10
-5
0
5
10
15
SWITCH INPUT VOLTAGE (V)
SWITCH INPUT VOLTAGE (V)
FIGURE 14. rDS(ON) vs VCM (V± = 16.5V)
FIGURE 15. rDS(ON) vs VCM (V± = 10.8V)
600
500
400
300
200
100
0
600
500
400
300
200
100
0
+125°C
+125°C
+25°C
+25°C
-55°C
-10
-55°C
-10
-15
-5
0
5
10
15
-15
-5
0
5
10
15
SWITCH INPUT VOLTAGE (V)
SWITCH INPUT VOLTAGE (V)
FIGURE 16. rDS(ON) vs VCM (V± = 12.0V)
FIGURE 17. rDS(ON) vs VCM (V± = 13.2V)
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ISL71840SEH
Typical Performance Curves V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
700
600
500
+125°C
400
5V/DIV
+25°C
-55°C
300
200
2V/DIV
100
t
= 211.199ns
t
= 561.469ns
0
ADDLH
ADDHL
10
11
12
13
14
15
16
17
500ns/DIV
SPLIT SUPPLY RAILS (±V)
FIGURE 19. ADDRESS TO OUTPUT DELAY (HIGH TO LOW)
FIGURE 18. TYPICAL ADDRESS TO OUTPUT DELAY (V± = ±15V, +25°C)
300
250
200
5V/DIV
-55°C
+125°C
150
+25°C
1V/DIV
100
50
0
t
= 202.207ns
t
= 352.379ns
10
11
12
13
14
15
16
17
DISABLE
ENABLE
SPLIT SUPPLY RAILS (±V)
500ns/DIV
FIGURE 21. TYPICAL ENABLE TO OUTPUT DELAY (V± = ±15V, +25°C)
FIGURE 20. ADDRESS TO OUTPUT DELAY (LOW TO HIGH)
400
350
600
500
400
300
250
200
150
100
50
-55°C
300
+125°C
200
+25°C
-55°C
+25°C
+125°C
15
100
0
0
10
11
12
13
14
16
17
10
11
12
13
14
15
16
17
SPLIT SUPPLY RAILS (±V)
SPLIT SUPPLY RAILS (±V)
FIGURE 22. ENABLE TO OUTPUT DELAY (LOW TO HIGH)
FIGURE 23. DISABLE TO OUTPUT DELAY (LOW TO HIGH)
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ISL71840SEH
Typical Performance Curves V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
120
100
+125°C
80
2V/DIV
60
+25°C
40
1V/DIV
-55°C
20
0
t
= 73.425ns
BBM
10
11
12
13
14
15
16
17
200ns/DIV
SPLIT SUPPLY RAILS (±V)
FIGURE 24. TYPICAL BREAK BEFORE MAKE DELAY (V± = 15V, +25°C)
FIGURE 25. BREAK-BEFORE-MAKE DELAY
160
140
120
100
80
120
100
80
60
40
20
0
60
40
20
0
100
10
100
1k
10k
100k
1M
1k
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 26. OFF ISOLATION (V± = ±15V, RL = 1kΩ, +25°C)
FIGURE 27. OFF ISOLATION (V± = ±15V, RL = OPEN, +25°C)
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
100
100k
FREQUENCY (Hz)
1M
10M
1k
10k
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FIGURE 28. CROSSTALK (V± = ±15V, RL = 1kΩ, +25°C)
FIGURE 29. CROSSTALK (V± = ±15V, RL = OPEN, +25°C)
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ISL71840SEH
Typical Performance Curves V± = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued)
V
V
: 5V/DIV
: 5V/DIV
IN
+
V
= +12V
OUT
VOUT
-
V = -12V
VIN
100µs/DIV
FIGURE 30. OVER/UNDERVOLTAGE PROTECTION (+25°C)
Post High Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
7
6
5
4
0
-1
-2
-3
-4
-5
-6
-7
GROUNDED
BIASED
3
BIASED
2
1
0
GROUNDED
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 31. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION
FIGURE 32. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION
1.6
60
1.4
BIASED
50
BIASED
1.2
1.0
40
30
20
0.8
GROUNDED
0.6
0.4
0.2
0
10
GROUNDED
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 33. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION
FIGURE 34. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION
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ISL71840SEH
Post High Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued)
25
20
15
10
5
20
18
16
14
12
10
8
BIASED
BIASED
GROUNDED
6
4
GROUNDED
2
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 35. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION
FIGURE 36. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION
250
8
7
6
BIASED
200
150
100
50
BIASED
5
4
GROUNDED
3
2
GROUNDED
1
0
-1
-2
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 37. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION
FIGURE 38. tADD SHIFT (LOW TO HIGH) vs HDR RADIATION
35
60
30
25
20
15
10
5
50
BIASED
BIASED
40
30
GROUNDED
20
GROUNDED
0
10
0
-5
-10
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 39. tADD SHIFT (HIGH TO LOW) vs HDR RADIATION
FIGURE 40. tBBM SHIFT vs HDR RADIATION
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Post High Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued)
50
40
30
20
10
0
200
180
160
140
120
100
80
BIASED
BIASED
GROUNDED
GROUNDED
60
40
20
0
-10
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 41. tENABLE SHIFT vs HDR RADIATION
FIGURE 42. tDISABLE SHIFT vs HDR RADIATION
Post High Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
7
6
5
4
3
2
1
0
0
-1
-2
-3
-4
-5
-6
-7
BIASED
GROUNDED
BIASED
GROUNDED
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 44. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION
FIGURE 43. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION
1.6
1.4
60
BIASED
50
40
30
20
10
0
BIASED
1.2
1.0
0.8
GROUNDED
0.6
0.4
0.2
0
GROUNDED
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 45. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION
FIGURE 46. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION
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ISL71840SEH
Post High Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued)
30
25
20
15
10
5
30
25
20
15
10
5
BIASED
BIASED
GROUNDED
GROUNDED
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 47. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION
FIGURE 48. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION
300
10
BIASED
8
6
250
200
150
100
50
BIASED
GROUNDED
4
2
GROUNDED
0
-2
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 49. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION
FIGURE 50. tADD SHIFT (LOW TO HIGH) vs HDR RADIATION
40
60
35
30
25
20
15
10
5
BIASED
50
40
30
20
10
0
BIASED
GROUNDED
GROUNDED
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 51. tADD SHIFT (HIGH TO LOW) vs HDR RADIATION
FIGURE 52. tBBM SHIFT vs HDR RADIATION
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ISL71840SEH
Post High Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s.
This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued)
50
45
40
35
30
25
20
15
10
5
200
180
160
140
120
100
80
BIASED
BIASED
GROUNDED
60
GROUNDED
40
20
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
HIGH DOSE RATE RADIATION (krad(Si))
HIGH DOSE RATE RADIATION (krad(Si))
FIGURE 53. tENABLE SHIFT vs HDR RADIATION
FIGURE 54. tDISABLE SHIFT vs HDR RADIATION
Post Low Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed.
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
GROUNDED
BIASED
GROUNDED
BIASED
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 55. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION
FIGURE 56. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION
10
2.5
8
GROUNDED
2.0
BIASED
6
4
2
1.5
BIASED
1.0
GROUNDED
0
-2
-4
0.5
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 57. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION
FIGURE 58. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION
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ISL71840SEH
Post Low Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
6
5
25
20
15
10
5
BIASED
BIASED
4
3
2
1
GROUNDED
0
-1
-2
-3
-4
0
GROUNDED
40
-5
0
10
20
30
40
50
60
0
10
20
30
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 59. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION
FIGURE 60. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION
0
-1
-2
250
BIASED
200
150
100
50
GROUNDED
-3
GROUNDED
-4
-5
-6
-7
BIASED
-8
-9
-10
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 61. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION
FIGURE 62. tADD SHIFT (LOW TO HIGH) vs LDR RADIATION
0
14
GROUNDED
12
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
10
BIASED
8
BIASED
6
4
2
0
GROUNDED
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 63. tADD SHIFT (HIGH TO LOW) vs LDR RADIATION
FIGURE 64. tBBM SHIFT vs LDR RADIATION
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ISL71840SEH
Post Low Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise
specified, V± = ±15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
300
250
200
150
100
50
20
15
10
5
BIASED
BIASED
GROUNDED
0
GROUNDED
-5
0
-10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 65. tENABLE SHIFT vs LDR RADIATION
FIGURE 66. tDISABLE SHIFT vs LDR RADIATION
Post Low Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, VCM = 0,VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed.
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
GROUNDED
BIASED
BIASED
GROUNDED
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 67. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION
FIGURE 68. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION
2.5
35
30
GROUNDED
2.0
25
20
15
10
5
BIASED
1.5
BIASED
1.0
0.5
0
GROUNDED
40
0
-5
0
10
20
30
40
50
60
0
10
20
30
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 70. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION
FIGURE 69. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION
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ISL71840SEH
Post Low Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, VCM = 0,VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
12
10
8
8
6
GROUNDED
BIASED
4
6
2
4
BIASED
2
0
GROUNDED
0
-2
-4
-2
-4
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 71. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION
FIGURE 72. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION
2
0
350
BIASED
300
250
200
150
100
50
-2
GROUNDED
-4
GROUNDED
-6
-8
BIASED
-10
-12
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 73. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION
FIGURE 74. tADD SHIFT (LOW TO HIGH) vs LDR RADIATION
20
16
15
10
5
14
GROUNDED
BIASED
12
10
8
0
BIASED
-5
6
GROUNDED
-10
-15
-20
4
2
0
0
10
20
30
40
50
60
10
20
30
40
50
0
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 75. tADD SHIFT (HIGH TO LOW) vs LDR RADIATION
FIGURE 76. tBBM SHIFT vs LDR RADIATION
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ISL71840SEH
Post Low Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, VCM = 0,VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
25
20
15
10
5
300
250
200
150
100
50
BIASED
BIASED
GROUNDED
GROUNDED
0
-5
0
-10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 77. tENABLE SHIFT vs LDR RADIATION
FIGURE 78. tDISABLE SHIFT vs LDR RADIATION
Applications Information
Power-Up Considerations
The circuit is designed to be insensitive to any given power-up
sequence between V+, V- and VREF, however, it is recommended
that all supplies power up relatively close to each other.
ISL71840SEH vs ISL71841SEH
There is a 32-channel version of the ISL71840SEH available in a
48 Ld CQFP. In terms of performance specs, the parts are very
similar in behavior. Apart from the apparent increase in channel
density, the ISL71841SEH does have slightly higher output
leakage compared to the ISL71840SEH due to having more
channels connected to the output. The supply current for the
ISL71841SEH is also a bit higher compared to the ISL71840SEH.
(See Table 1 on page 3).
Overvoltage Protection
The ISL71840SEH has overvoltage protection on both the input
as well as the output. On the output, the voltage is limited to a
diode past the rails. Each of the inputs has independent
overvoltage protection that works regardless of the switch being
selected. If a switch experiences an overvoltage condition (3V to
4V past the rail), the switch is turned off. As soon as the voltage
returns within the rails, the switch returns to normal operation.
VREF and Logic Functionality
The VREF pin sets the logic threshold for the ISL71840SEH. The
range for VREF is between 4.5V and 5.5V with a nominal voltage
of 5V. The address pins and enable are compared against
roughly 30% of VREF voltage (refer to Figure 79). With 5V on VREF
,
the switching point is set to around 1.4V. This switching point
allows for both 5V and 3.3V logic control.
ISL71840SEH
A/EN
400kΩ
VREF
TO DECODER
200kΩ
FIGURE 79. SIMPLIFIED VREF CIRCUITRY
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ISL71840SEH
Assembly Related Information
Die Characteristics
SUBSTRATE POTENTIAL
Die Dimensions
Floating
2820µm x 4080µm (111 mils x 161 mils)
Thickness: 483µm ±25µm (19 mils ±1 mil)
Additional Information
Interface Materials
WORST CASE CURRENT DENSITY
1.6 x 105 A/cm2
GLASSIVATION
Type: 12kÅ Silicon Nitride on 3kÅ Oxide
TRANSISTOR COUNT
TOP METALLIZATION
5682
Type: 300Å TiN on 2.8µm AlCu
In Bondpads, TiN has been removed.
Weight of Packaged Device
2.096 grams
BACKSIDE FINISH
Lid Characteristics
Silicon
Finish: Gold
Potential: Grounded, tied to package pin 12
PROCESS
P6SOI
Metalization Mask Layout
OUT
IN8
IN16
V+
V-
IN15
IN14
IN13
IN12
IN11
IN10
IN9
IN7
IN6
IN5
IN4
IN3
IN2
IN1
EN
BAR
A4
A3
A2
A1
A0
GND
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ISL71840SEH
TABLE 3. ISL71840SEH DIE LAYOUT X-Y COORDINATES
ΔX
ΔY
X
Y
PAD NUMBER
PAD NAME
IN8
PACKAGING PIN
P26
P27
P28
P1
(µm)
(µm)
(µm)
(µm)
1
127
125
125
125
127
127
127
127
127
127
127
127
250
127
127
127
127
127
127
127
127
127
127
127
127
127
127
125
125
125
127
127
127
127
127
127
127
127
125
127
127
127
127
127
127
127
127
127
127
127
127
127
979.5
417.5
1768.5
1754.5
1774.5
1756.5
1752.5
1310.5
868.5
3
V+
4
OUT
V-
-79.5
5
-474.5
7
IN16
IN15
IN14
IN13
IN12
IN11
IN10
IN9
P4
-947.5
10
11
12
13
14
15
16
17
18
19
20
21
22
23
25
26
27
28
29
30
31
P5
-1133.5
-1133.5
-1133.5
-1133.5
-1133.5
-1133.5
-1133.5
-1147
P6
P7
426.5
P8
-15.5
P9
-457.5
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
-899.5
-1341.5
-1839.5
-1763.5
-1763.5
-1763.5
-1763.5
-1763.5
-1763.5
-1341.5
-899.5
-457.5
GND
VREF
A3
-781.5
-451.5
-121.5
208.5
A2
A1
A0
538.5
EN_B
IN1
868.5
1133.5
1133.5
1133.5
1133.5
1133.5
1133.5
1133.5
IN2
IN3
IN4
-15.5
IN5
426.5
IN6
868.5
IN7
1310.5
NOTE: Origin of coordinates is the center of the die.
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ISL71840SEH
Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted.
Please go to the web to make sure that you have the latest revision.
DATE
REVISION
FN8734.3
CHANGE
June 9, 2016
Updated Ordering information table on page 3 by updating first column and updating Note 2.
Updated bolding in Electrical Specification table and added test conditions to the Break-Before-Make Delay,
Enable Turn-On Time and Disable Turn-Off Time specifications.
Changed from “VS” to “V±” in the titles of the Typical Performance, Post High and Post Low Dose Rate
Radiation Characteristics curve tables.
Changed units from mA to µA for Figures 31, 32, 33, 43, 44, 45, 55, 56, 57, 67, 68, 69
March 30, 2016
FN8734.2
FN8734.1
Updated the heading for the Low Dose Rate Radiation Characteristics (Vs = ±15V) table on page 19 in third
sentence changed from “high” to “low”.
Updated the heading for the Low Dose Rate Radiation Characteristics (Vs = ±12V) table on page 21 in third
sentence changed from “high” to “low”.
November 12, 2015
Corrected ESD Specification references on page 5.
Updated Crosstalk and Off Isolation minimum specifications on page 7.
Updated VSS and VDD to V+ and V- in “Block Diagram” on page 10, “Metalization Mask Layout” on page 24
and Table 3 on page 25.
Removed redundant specs from ±12V Table (VCTE, VISO, VCT, CA, CIN, COUT).
Added Figures 26, 28 and 30.
Updated Figures 33 and 45 y-axis scale.
Updated Figures 31 through 78 y-axis labels.
Updated top metalization thickness and composition on page 24.
Updated probe coordinates table for consistency on page 25.
June 15, 2015
FN8734.0
Initial Release
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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ISL71840SEH
Ceramic Metal Seal Flatpack Packages (Flatpack)
K28.A MIL-STD-1835 CDFP3-F28 (F-11A, CONFIGURATION B)
28 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A
A
e
INCHES MILLIMETERS
MIN
PIN NO. 1
ID AREA
SYMBOL
MAX
0.115
0.022
0.019
0.009
0.006
0.740
0.520
0.550
-
MIN
1.14
0.38
0.38
0.10
0.10
-
MAX
2.92
0.56
0.48
0.23
0.15
18.80
13.21
13.97
-
NOTES
D
A
b
0.045
0.015
0.015
0.004
0.004
-
-
-
-A-
-B-
S1
b1
c
-
-
b
c1
D
-
E1
3
-
0.004
Q
H
A - B
D
0.036
H
A - B
D
S
M
S
S
M
S
C
E
0.460
-
11.68
-
E
E1
E2
E3
e
3
-
-D-
A
0.180
0.030
4.57
0.76
-H-
-C-
-
-
7
-
L
E2
L
E3
E3
0.050 BSC
1.27 BSC
SEATING AND
BASE PLANE
c1
LEAD FINISH
k
0.008
0.250
0.026
0.00
-
0.015
0.370
0.045
-
0.20
6.35
0.66
0.00
-
0.38
9.40
1.14
-
2
-
L
BASE
METAL
Q
S1
M
N
8
6
-
(c)
b1
0.0015
0.04
M
M
(b)
28
28
-
SECTION A-A
Rev. 0 5/18/94
NOTES:
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area
shown. The manufacturer’s identification shall not be used as a pin
one identification mark. Alternately, a tab (dimension k) may be
used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the limits
of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus and glass over-
run.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension M
applies to lead plating and finish thickness. The maximum limits of
lead dimensions b and c or M shall be measured at the centroid of
the finished lead surfaces, when solder dip or tin plate lead finish is
applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materi-
als shall be molded to the bottom of the package to cover the leads.
8. Dimension Q shall be measured at the point of exit (beyond the me-
niscus) of the lead from the body. Dimension Q minimum shall be
reduced by 0.0015 inch (0.038mm) maximum when solder dip lead
finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
FN8734.3
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