RFM12N20 [INTERSIL]
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs; 12A ， 180V和200V ， 0.250 Ohm的N通道功率MOSFET
| 型号： | RFM12N20 |
| 厂家： | 
Intersil |
| 描述： | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFM12N18, RFM12N20,
RFP12N18, RFP12N20
Semiconductor
12A, 180V and 200V, 0.250 Ohm,
N-Channel Power MOSFETs
September 1998
Features
Description
• 12A, 180V and 200V
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N
20)
/Subject
(12A,
180V
and
200V,
0.250
• r
= 0.250Ω
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09293.
Ordering Information
PART NUMBER
RFM12N18
PACKAGE
TO-204AA
BRAND
RFM12N18
Symbol
D
RFM12N20
TO-204AA
TO-220AB
TO-220AB
RFM12N20
RFP12N18
RFP12N20
RFP12N18
G
RFP12N20
NOTE: When ordering, use the entire part number.
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
S
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
SOURCE
DRAIN
(FLANGE)
DRAIN
DRAIN
GATE
(TAB)
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
SOURCE (PIN 2)
GATE (PIN 1)
204AA,
TO-
220AB)
/Creator
()
/DOCIN
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 1461.2
Copyright © Harris Corporation 1998
5-1
RFM12N18, RFM12N20, RFP12N18, RFP12N20
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
RFM12N18 RFM12N20 RFP12N18 RFP12N20
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V
180
180
200
200
180
180
200
200
V
V
DSS
Drain to Gate Voltage (R
GS
= 1mΩ) (Note 1). . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12
30
12
30
12
30
12
30
A
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
0.8
100
0.8
75
0.6
75
0.6
W
W/ C
D
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . T
T
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
J, STG
o
300
260
300
260
300
260
300
260
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
I = 250µA, V = 0V
D
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
RFM12N18, RFP12N18
DSS
GS
180
-
-
-
-
-
-
-
V
V
RFM12N20, RFP12N20
Gate Threshold Voltage
200
V
V
V
V
= V , I = 250µA, (Figure 8)
DS
2
-
4
V
GS(TH)
GS
DS
DS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
DSS GS
= 0V
1
µA
µA
DSS
= 0.8 x Rated BV
V
= 0V,
-
25
DSS, GS
o
T
= 125 C
C
Gate to Source Leakage Current
I
V
= ±20V, V
DS
= 0V
-
-
-
-
-
-
-
-
-
-
-
-
-
±100
0.250
3.0
nA
Ω
GSS
GS
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
r
I
I
= 12A, V
= 10V, (Figures 6, 7)
= 10V
-
DS(ON)
D
GS
GS
V
= 12A, V
D
-
V
DS(ON)
t
V
R
= 100V, ID ≈ 6A, R = 50Ω,
35
50
ns
d(ON)
DD
G
= 16.5Ω, V
= 10V,
L
GS
Rise Time
t
130
200
180
160
1700
600
300
1.25
1.67
ns
r
(Figures 10, 11, 12)
Turn-Off Delay Time
t
120
ns
d(OFF)
Fall Time
t
105
ns
f
Input Capacitance
C
V
= 25V, V
GS
= 0V, f = 1MHz,
-
-
-
-
-
pF
pF
pF
C/W
C/W
ISS
DS
(Figure 9)
Output Capacitance
C
C
OSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
RSS
o
o
R
RFM12N18, RFM12N20
RFP12N18, RFP12N20
θJC
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTE:
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
V
I
I
= 6A
-
-
-
1.4
-
V
SD
SD
t
= 4A, dI /dt = 100A/µs
SD
325
ns
rr
SD
2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
5-2
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
14
12
10
8
6
4
2
0
0
50
100
o
150
25
50
75
100
125
150
o
T , CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
o
30
T
= 25 C
C
V
= 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
GS
V
= 8V
GS
= 7V
25
20
15
10
5
CASE TEMPERATURE
V
I
(MAX)
GS
D
o
T
= 25 C
C
V
= 20V
CONTINUOUS
GS
V
= 6V
= 5V
= 4V
GS
10
1
OPERATION IN
THIS AREA MAY BE
V
GS
LIMITED BY r
DS(ON)
V
(MAX) 180V
DSS
RFM12N18, RFP12N18
V
GS
V
(MAX) 200V
DSS
RFM12N20, RFP12N20
0.1
0
0
1
2
3
4
5
6
7
1
10
100
1000
V
, DRAIN TO SOURCE VOLTAGE (V)
V , DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
40
35
30
25
20
15
10
5
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
V
= 10V
DS
GS
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
o
-40 C
o
25 C
o
125 C
o
125 C
o
25 C
o
-40 C
o
125 C
o
-40 C
0
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
9
10
V
, GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
GS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
5-3
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Typical Performance Curves Unless Otherwise Specified (Continued)
2
1.5
1
1.3
1.2
1.1
1
V
= V
DS
GS
= 250µA
I
= 12A, V = 10V
GS
D
I
D
0.9
0.8
0.7
0.6
0.5
0
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
10
200
150
100
50
V
DS
1600
V
= 0V, f = 1MHz
GS
8
6
C
C
C
= C + C
1400
1200
1000
800
600
400
200
0
ISS
GS GD
GATE
SOURCE
VOLTAGE
V
= BV
DSS
V
= BV
DD
DD
DSS
= C
≈ C
RSS
OSS
GD
C
+ C
GS
ISS
DS
R
= 16.67Ω
L
I
= 1mA
G(REF)
4
2
V
= 10V
GS
0.75BV
0.50BV
0.25BV
0.75BV
0.50BV
0.25BV
DSS
DSS
DSS
DSS
DSS
DSS
C
OSS
DRAIN SOURCE VOLTAGE
C
0
0
RSS
I
I
I
I
G(REF)
G(REF)
20
80
t, TIME (µs)
G(ACT)
G(ACT)
0
10
V
20
30
40
50
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
DS
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5-4
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