RURP15120 [INTERSIL]

15A, 1200V Ultrafast Diode; 15A , 1200V超快二极管
RURP15120
型号: RURP15120
厂家: Intersil    Intersil
描述:

15A, 1200V Ultrafast Diode
15A , 1200V超快二极管

二极管 局域网 超快软恢复二极管 快速软恢复二极管
文件: 总4页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RURP15120  
Data Sheet  
January 2000  
File Number 3696.3  
15A, 1200V Ultrafast Diode  
Features  
The RURP15120 is an ultrafast diode with soft recovery  
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<100ns  
characteristics (t < 100ns). It has low forward voltage drop  
and is of silicon nitride passivated ion-implanted epitaxial  
planar construction.  
rr  
o
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175 C  
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V  
• Avalanche Energy Rated  
This device is intended for use as a freewheeling/clamping  
diode and rectifier in a variety of switching power supplies  
and other power switching applications. Its low stored charge  
and ultrafast soft recovery minimize ringing and electrical  
noise in many power switching circuits, thus reducing power  
loss in the switching transistors.  
• Planar Construction  
Applications  
• Switching Power Supplies  
• Power Switching Circuits  
• General Purpose  
Formerly developmental type TA49097.  
Ordering Information  
Packaging  
PART NUMBER  
PACKAGE  
BRAND  
RUR15120  
JEDEC TO-220AC  
RURP15120  
TO-220AC  
ANODE  
NOTE: When ordering, use the entire part number.  
CATHODE  
Symbol  
K
CATHODE  
(FLANGE)  
A
o
Absolute Maximum Ratings  
T
= 25 C, Unless Otherwise Specified  
C
RURP15120  
1200  
UNITS  
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
V
V
V
A
RRM  
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
1200  
RWM  
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
1200  
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
15  
F(AV)  
o
(T = 140 C)  
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
(Square Wave, 20kHz)  
30  
A
A
FRM  
FSM  
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
(Halfwave, 1 Phase, 60Hz)  
200  
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
100  
20  
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E  
mJ  
AVL  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
, T  
-65 to 175  
C
STG  
J
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
RURP15120  
o
Electrical Specifications  
T = 25 C, Unless Otherwise Specified  
C
SYMBOL  
TEST CONDITION  
MIN  
TYP  
MAX  
2.1  
1.9  
100  
500  
100  
130  
-
UNITS  
V
V
I
I
= 15A  
-
-
-
-
-
-
-
-
-
-
-
-
-
F
F
F
o
= 15A, T = 150 C  
V
C
I
t
V
V
= 1200V  
-
µA  
µA  
ns  
R
R
R
o
= 1200V, T = 150 C  
-
C
I
I
I
I
I
= 1A, dI /dt = 100A/µs  
-
rr  
F
F
F
F
F
F
= 15A, dI /dt = 100A/µs  
-
ns  
F
t
t
= 15A, dI /dt = 100A/µs  
65  
40  
400  
56  
-
ns  
a
b
F
= 15A, dI /dt = 100A/µs  
-
ns  
F
Q
= 15A, dI /dt = 100A/µs  
-
nC  
pF  
RR  
F
C
V
= 10V, I = 0A  
-
J
R
F
o
R
1.5  
C/W  
θJC  
DEFINITIONS  
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).  
F
R
rr  
I
t
= Instantaneous reverse current.  
= Reverse recovery time (See Figure 9), summation of t + t .  
a
b
t
t
= Time to reach peak reverse current (See Figure 9).  
a
b
= Time from peak I  
RM  
to projected zero crossing of I  
RM  
based on a straight line from peak I  
through 25% of I (See Figure 9).  
RM  
RM  
Q
= Reverse recovery charge.  
RR  
C = Junction capacitance.  
J
R
= Thermal resistance junction to case.  
θJC  
pw = pulse width.  
D = duty cycle.  
Typical Performance Curves  
100  
1000  
100  
o
175 C  
o
o
175 C  
25 C  
10  
1
10  
o
100 C  
o
100 C  
0.1  
1
o
25 C  
0.01  
0.5  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
200  
400  
600  
800  
1000  
1200  
V , FORWARD VOLTAGE (V)  
V , REVERSE VOLTAGE (V)  
R
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE  
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE  
2
RURP15120  
Typical Performance Curves (Continued)  
125  
o
= 25 C, dI /dt = 100A/µs  
200  
150  
100  
T
C
F
o
T
= 100 C, dI /dt = 100A/µs  
F
C
100  
75  
50  
25  
0
t
rr  
t
t
rr  
t
a
a
t
t
b
50  
0
b
0.5  
1
5
10  
15  
0.5  
1
5
10  
15  
I , FORWARD CURRENT (A)  
I , FORWARD CURRENT (A)  
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT  
rr a  
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT  
rr  
b
a
b
15  
12  
9
250  
200  
150  
100  
o
T
= 175 C, dI /dt = 100A/µs  
F
C
t
DC  
rr  
SQ. WAVE  
6
3
t
a
t
b
50  
0
0
100  
115  
130  
T , CASE TEMPERATURE ( C)  
C
145  
160  
175  
0.5  
1
5
10  
15  
o
I , FORWARD CURRENT (A)  
F
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT  
rr  
FIGURE 6. CURRENT DERATING CURVE  
a
b
300  
250  
200  
150  
100  
50  
0
0
50  
100  
150  
200  
V
, REVERSE VOLTAGE (V)  
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE  
3
RURP15120  
Test Circuits and Waveforms  
V
AMPLITUDE AND  
GE  
R
CONTROL dI /dt  
G
F
L
t
t CONTROL I  
2 F  
1 AND  
DUT  
CURRENT  
SENSE  
dI  
F
t
rr  
R
I
F
G
dt  
t
t
b
+
a
0
V
V
DD  
GE  
-
IGBT  
t
1
0.25 I  
RM  
t
2
I
RM  
FIGURE 8. t TEST CIRCUIT  
rr  
FIGURE 9. t WAVEFORMS AND DEFINITIONS  
rr  
I = 1A  
L = 40mH  
R < 0.1Ω  
2
E
= 1/2LI [V  
/(V  
- V )]  
DD  
AVL  
= IGBT (BV  
R(AVL)  
R(AVL)  
> DUT V )  
R(AVL)  
V
AVL  
Q
1
CES  
L
R
+
V
CURRENT  
SENSE  
I
I
L
L
DD  
DD  
I
V
Q
1
V
DUT  
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT  
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE  
WAVEFORMS  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
4

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