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FSL23A0D1 [INFINEON]

Power Field-Effect Transistor, 6A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3;
FSL23A0D1
型号： FSL23A0D1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 6A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

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