IRAMX16UP60A [INFINEON]
Plug N DriveTM Integrated Power Module for Appliance Motor Drive; 插销N传动系统的集成电源模块的家电电机驱动器
| 型号： | IRAMX16UP60A |
| 厂家： | 
Infineon |
| 描述： | Plug N DriveTM Integrated Power Module for Appliance Motor Drive |
| 文件： | 总18页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94684 RevB
IRAMX16UP60A
Series
TM
Plug N Drive Integrated Power
Module for Appliance Motor Drive
16A, 600V
Description
International Rectifier's IRAMX16UP60A is an Integrated Power Module developed and optimized for electronic
motor control in appliance applications such as washing machines and variable speed compressor drives for in-
room air-conditioning systems and commercial refrigerators. Plug N Drive technology offers an extremely com-
pact, high performance AC motor-driver in a single isolated package for a very simple design.
An open emitter configuration of the low side IGBT switches offer easy current feedback and overcurrent monitor
for high precision and reliable control.
A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and inte-
grated under-voltage lockout function, deliver high level of protection and fail-safe operation.
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply
required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction
advantages.
Features
• Integrated Gate Drivers and Bootstrap Diodes.
• Temperature Monitor
• Temperature and Overcurrent shutdown
• Fully Isolated Package.
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Low side IGBT emitter pins for current control
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.75~2kW / 85~253 Vac
• Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
Max. Value
Units
Maximum IGBT Blocking Voltage
600
VCES
V+
V
Positive Bus Input Voltage
450
RMS Phase Current
16
IO @ TC=25°C
RMS Phase Current
8
30
IO @ TC=100°C
A
Maximum Peak Phase Current (tp<100ms)
Maximum PWM Carrier Frequency
Maximum Power dissipation per Phase
Isolation Voltage (1min)
Ipk
Fp
Pd
20
kHz
W
35
2000
V
iso
VRMS
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
-40 to +150
-40 to +150
0.8 to 1.0
TJ (IGBT & Diodes)
°C
TJ (Driver IC)
T
Nm
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1
IRAMX16UP60A
Internal Electrical Schematic - IRAMX16UP60A
V+(10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
Rg2
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
LO1 16
LO2 15
LO3 14
24 HO1
25 VB1
1 VCC
Rg4
R3
Rg6
Driver IC
2 HIN1
3 HIN2
4 HIN3
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN2 LIN3
F
8
ITRIP EN RCIN VSS COM
10 11 12 13
5 LIN1
6
7
9
LIN1 (18)
LIN2 (19)
LIN3 (20)
R1
T/ITRIP (21)
RT
THERMISTOR
R2
C
VDD (22)
VSS (23)
2
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IRAMX16UP60A
Inverter Section Electrical Characteristics @ TJ = 25°C
Conditions
Symbol
Parameter
Min
Typ
Max
Units
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
600
---
---
V
VIN=5V, IC=20mA
Temperature Coeff. Of
Breakdown Voltage
VIN=5V, IC=1.0mA
(25°C - 150°C)
IC=8A TJ=25°C, VDD=15V
DV(BR)CES / DT
---
0.3
---
V/°C
V
---
---
---
---
1.60
1.75
5
1.90
2.00
30
Collector-to-Emitter Saturation
Voltage
VCE(ON)
IC=8A TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
Zero Gate Voltage Collector
Current
ICES
mA
50
80
Zero Gate Phase-to-Phase
Current
VIN=5V, V+=600V
Ilk_module
VFM
--
--
50
mA
---
---
2.0
1.5
3.25
2.0
IC=8A
Diode Forward Voltage Drop
V
IC=8A, TJ=150°C
Inverter Section Switching Characteristics @ TJ = 25°C
Conditions
IC=8A, V+=400V
VDD=15V, L=2mH
Symbol
Eon
Parameter
Min
---
---
---
---
---
---
Typ
315
150
465
500
255
755
Max
435
180
615
700
310
1010
Units
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-on Swtiching Loss
Turn-off Switching Loss
Total Switching Loss
Eoff
mJ
Etot
TJ=25°C
TJ=150°C
See CT1
Eon
Eoff
mJ
Energy losses include "tail" and
diode reverse recovery
Etot
Diode Reverse Recovery
energy
Erec
trr
---
---
45
95
mJ
TJ=150°C, V+ =400V VDD=15V,
IF=8A, L=2mH
Diode Reverse Recovery time
105
145
ns
TJ=150°C, IC=8A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
Reverse Bias Safe Operating
Area
FULL SQUARE
---
RBSOA
SCSOA
TJ=150°C, VP=600V,
V+=360V,
Short Circuit Safe Operating
Area
10
---
ms
VDD=+15V to 0V
See CT2
Thermal Resistance
Symbol
Parameter
Min
Typ
Max
Units Conditions
Junction to case thermal
resistance, each IGBT under
inverter operation.
Rth(J-C)
---
---
4.0
°C/W
Flat, greased surface.
Heatsink compound thermal
conductivity - 1W/mK
Junction to case thermal
resistance, each Diode under
inverter operation.
Rth(J-C)
---
---
5
5.5
---
°C/W
°C/W
Thermal Resistance case to
sink
Rth(C-S)
0.1
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3
IRAMX16UP60A
Absolute Maximum Ratings Driver function
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to VSS. (Note 1)
Symbol
VS1,2,3
VB1,2,3
VDD
Definition
Min
-0.3
-0.3
-0.3
-0.3
-40
Max
600
20
Units
V
V
High Side offset voltage
High Side floating supply voltage
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, T/ITRIP
Juction Temperature
20
V
VIN
7
V
TJ
150
°C
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to VSS. The VS offset rating is tested with all
supplies biased at 15V differential (Note 1). All input pin (V ) and IITRIP are clamped with a 5.2V zener diode and pull-up
IN
resistor to VDD
Symbol
VB1,2,3
VS1,2,3
VDD
Definition
Min
VS+12
Note 2
12
Max
VS+20
450
Units
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
T/ITRIP input voltage
V
20
V
V
VITRIP
VIN
VSS
VSS+5
VSS+5
Logic input voltage LIN, HIN
VSS
Static Electrical Characteristics Driver Function
V
(V , V 1,2,3) = 15V unless otherwise specified. The V and I parameters are referenced to VSS and are
IN IN
BIAS CC BS
applicable to all six channels. (Note 1)
Symbol
VIN,th+
Definition
Positive going input threshold
Negative going input threshold
Min
---
Typ
---
Max
3.0
---
Units
V
V
VIN,th-
0.8
---
VCCUV+
VBSUV+
VCC and VBS supply undervoltage
Positive going threshold
10.6
10.4
---
11.1
10.9
0.2
11.6
11.4
---
V
V
V
VCCUV-
VBSUV-
VCC and VBS supply undervoltage
Negative going threshold
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
Ilockout hysteresis
IQBS
IQCC
ILK
Quiescent VBS supply current
---
---
70
1.6
---
120
2.3
50
mA
mA
mA
mA
V
Quiscent VCC supply current
Offset Supply Leakage Current
Input bias current (OUT=HI or OUT=LO)
---
IIN+
---
120
4.3
---
V(T/ITRIP
)
T/ITRIP threshold Voltage (OUT=HI or OUT=LO) (Note 3)
3.85
4.75
4
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IRAMX16UP60A
Dynamic Electrical Characteristics
VDD = VBS = VBIAS = 15V, Io= 1A, VD=9V , PWMin= 2kHz, V
TA = 25°C unless otherwise specified.
= V
V
= V
OFF
ON
,th+,
,th-
IN
IN
IN
IN
Symbol
TON
Definition
Min
Typ
470
615
300
750
9
Max
Units
ns
Input to output propagation turn-on delay time (see fig.11)
Input to output propagation turn-off delay time (see fig. 11)
Dead Time
-
-
-
-
-
-
-
-
-
-
TOFF
ns
DT
ns
I/TTrip
TFCLTRL
T/ITrip to six switch to turn-off propagation delay (see fig. 2)
Post ITrip to six switch to turn-off clear time (see fig. 2)
ns
ms
Internal NTC - Thermistor Characteristics
Parameter
Typ
100 +/- 5%
2.522 + 17.3 % /- 14.9%
4250 +/- 3%
-40 / 125
Units
kW
Conditions
TC = 25°C
R25
R125
B
Resistance
Resistance
kW
TC = 125°C
R2 = R1e [B(1/T2 - 1/T1)]
B-constant (25-50°C)
k
Temperature Range
°C
Typ. Dissipation constant
1
mW/°C
TC = 25°C
Note 1: For more details, see IR21365 data sheet
Note 2: Logic operational for Vs from COM-5V to COM+600V. Logic stata held for Vs from COM-5V to COM-
VBS. (please refer to DT97-3 for more details)
Thermistor Built-in IRAMX16UP60A
VCC (22)
NTC
IR21365
12K
T/ITRIP (21)
6.8k
VSS (23)
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating condi-
tions is 3.3V.
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5
IRAMX16UP60A
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge
output voltage would be determined by the direction of current flow in the load.
Vbus
HIN1,2,3 LIN1,2,3
Itrip
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
Vbus
0
X
X
Ho
Lo
Hin1,2,3
(15,16,17)
U,V,W
(8,5,2)
IC
Driver
Lin1,2,3
(18,19,20)
6
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IRAMX16UP60A
Figure 2. T/ITrip Timing Waveform
HIN1,2,3
LIN1,2,3
50%
T/Itrip
U,V,W
50%
tfltclr
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge
output voltage would be determined by the direction of current flow in the load.
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7
IRAMX16UP60A
Module Pin-Out Description
Pin
1
Name
VB3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
2
W,VS3
na
3
4
VB2
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
5
V,VS2
na
6
7
VB1
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
8
U,VS1
na
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V+
Positive Bus Input Voltage
na
none
LE1
Low Side Emitter Connection - Phase 1
Low Side Emitter Connection - Phase 2
Low Side Emitter Connection - Phase 3
Logic Input High Side Gate Driver - Phase 1
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Temperature Monitor and Shut-down Pin
+15V Main Supply
LE2
LE3
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
T/Itrip
VCC
VSS
Negative Main Supply
8
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IRAMX16UP60A
Typical Application Connection IRAMX16UP60A
VBW
VSW
U
BOOT-STRAP
CAPACITORS
VBV
V
3-ph AC
MOTOR
VSV
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VBU
VSU
W
V+
DC BUS
CAPACITORS
LeU
LeV
PHASE LEG
CURRENT
SENSE
LeW
HINU
HINV
HINW
LINU
LINV
LINW
Driver IC
CONTROLLER
T/ITRIP
VDD(15 V)
VSS
5k
TEMP
SENSE
6.8K
1m
3.3 V
NTC
10.2k
0.1
m
10m
12k
O/C
SENSE
(ACTIVE LOW)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will
furtherimproveperformance.
2. In order to provide good decoupling between Vcc-Gnd and Vb-Vs terminals, the capacitors shown con-
nected between these terminals should be located very close to the module pins. Additional high frequency
capacitors, typically 0.1mF, are strongly recommended.
3. Low inductance shunt resistors should be used for phase leg current sensing. Similarly, the length of the
traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as possible.
4. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044, or figure 10.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous cur-
rent in inverter.
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9
IRAMX16UP60A
14
12
10
8
Tc=100°C
Tc=110°C
Tc=120°C
6
4
2
0
0
5
10
15
20
PWM Switching Frequency (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency
VBUS=400V , Tj=150°C, Modulation Depth=0.8, PF=0.6
10
9
8
7
6
5
4
3
2
1
0
Switching Frequency:
12kHz
16kHz
20kHz
1
10
100
Motor Current Modulation Frequency (Hz)
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMX16UP60A
18
16
14
12
10
8
450
400
350
Current
Voltage
300
250
200
150
100
50
6
4
2
0
0
-2
-50
0.000
0.100
0.200 0.300
0.400
0.500
0.600
0.700 0.800
0.900
1.000
Time (ms)
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=150°C, VBUS=400V
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=150°C, VBUS=400V
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11
IRAMX16UP60A
1000
Minimum
Nominal
Maximum
100
10
1
0
20
40
60
80
100
120
140
Temperature (°C)
Figure 7. Variation of thermistor resistance with temperature
6
5
4
3
2
1
0
Maximum
Nominal
Minimum
0
20
40
60
80
100
120
140
Thermistor Temperature (°C)
Figure 8. Variation of temperature sense voltage with thermistor temperature using exter-
nal bias resistance of 6.8KW, Vcc=15V
12
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IRAMX16UP60A
200
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
Thermistor Temperature (°C)
Figure 9. Estimated maximum IGBT junction temperature with thermistor temperature
20
17.5
15
15
12.5
10
10
6.8
7.5
5
4.7
2.5
0
5
10
15
15
20
19.5
0
1.5
3
4.5
6
7.5
Switching Frequency (kHz)
Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency
9
10.5
12
13.5
16.5
18
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13
IRAMX16UP60A
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
90% IC
HIN/LIN
HIN/LIN
50%
HIN/LIN
HIN/LIN
10%
VCE
10% IC
10% IC
TON
TOFF
tf
tr
Figure 11b. Input to Output propaga-
tion turn-off delay timet
Figure 11a. Input to Output propagation
turn-on delay time
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMX16UP60A
Vbus
5V
Ho
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
Lo
Figure CT1. Switching Loss Circuit
Vbus
IN
Io
Ho
PWM=4ms
Hin1,2,3
1k
10k
IC
Driver
VCC
U,V,W
Io
Lin1,2,3
5VZD
Lo
IN
Figure CT2. S.C.SOA Circuit
Vbus
Ho
Hin1,2,3
10k
IN
Io
1k
VCC
IC
Driver
U,V,W
Io
5VZD
Lin1,2,3
Lo
IN
Figure CT3. R.B.SOA Circuit
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15
IRAMX16UP60A
Package Outline
note 2
62
A
3
56
note 3
B
035-Z2L03
IRAMX16UP60A
1
23
note 1
2 TYP.
0.80
0.55
TYP.
Ø0.20 M
A
B
0.70
0.45
22 PITCHES = 44
TYP.
46.2
C
R0.6 TYP.
50
CONVEX ONLY
5.0
3.2
0.10
C
MIN.
Standard pin leadforming option
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
For mounting instruction see AN-1049
16
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IRAMX16UP60A
Package Outline
note 2
62
56
A
3
B
note 3
035-Z2L03
IRAMX16UP60A
1
23
note 1
0.80
0.55
2 TYP.
TYP.
Ø0.20 M
A
B
4.7
22 PITCHES = 44
46.2
C
R0.6 TYP.
CONVEX ONLY
3.2
50
0.10
C
MIN.
Pin leadforming option -2
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
08/03
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17
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