关闭背景特效

IRF510S [IRF]

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A); 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.54ohm ，ID = 5.6A ）

IRF510S


元器件型号：	IRF510S
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A) 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.54ohm ，ID = 5.6A ）晶体晶体管局域网
PDF文件：	总6页 (文件大小：181K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF510S参数

IRF510SPBF

HEXFET Power MOSFET

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83 IRF

IRF510SPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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4 VISHAY

IRF510STRL

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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3 IRF

IRF510STRLPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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1 VISHAY

IRF510STRLPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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1 VISHAY

IRF510STRLPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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2 IRF

IRF510STRR

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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2 IRF

IRF510STRRPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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2 VISHAY

IRF510STRRPBF

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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1 IRF

IRF511

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

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107 HARRIS

IRF511

N-Channel Power MOSFETs, 5.5 A, 60-100V

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163 FAIRCHILD

IRF511

N-Channel Enhancement-Mode Vertical DMOS Power FETs

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66 SUPERTEX

IRF511

IRF511

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0 TI

IRF511

Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 MOTOROLA

IRF511-009PBF

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 IRF

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