IRF520VSPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRF520VSPBF


型号：	IRF520VSPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总11页 (文件大小：221K)
下载：	下载PDF数据表文档文件

IRF520VSTRL

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263AB

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35 ETC

IRF520VSTRR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263AB

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20 ETC

IRF520VSTRRPBF

Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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1 IRF

IRF521

N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

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311 SUPERTEX

IRF521

N-Channel Power MOSFETs, 11 A, 60-100 V

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150 FAIRCHILD

IRF521

Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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4 SAMSUNG

IRF521

Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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7 VISHAY

IRF5210

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

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1741 IRF

IRF5210

Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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61 IRF

IRF521-002

Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF5210L

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

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233 IRF

IRF5210LHR

Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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3 IRF

IRF5210LPBF

HEXFET Power MOSFET

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106 IRF

IRF5210PBF

HEXFET Power MOSFET

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269 IRF

IRF5210S

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

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812 IRF

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