IRF612-009 [INFINEON]
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | IRF612-009 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 局域网 脉冲 晶体管 |
| 文件： | 总1页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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IRF612-010
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IRF613-001PBF
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