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IRF614SPBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRF614SPBF
型号: IRF614SPBF
厂家: Infineon    Infineon
描述:

HEXFET Power MOSFET
HEXFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关
文件: 总9页 (文件大小:1719K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRF614STRLPBF

TRANSISTOR 2.7 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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0 VISHAY

IRF614STRRPBF

Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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IRF615

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB

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IRF615-001

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF615-001PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-002

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF615-002PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-003

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2 INFINEON

IRF615-003PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-004

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF615-005

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF615-005PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-006

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF615-006PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-009PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-010

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-010PBF

2.2A, 250V, 3ohm, N-CHANNEL, Si, POWER, MOSFET

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IRF615-011

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF615-011PBF

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF615-012

Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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1 INFINEON