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IRF630NL [IRF]

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A); 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.30ohm ，ID = 9.3A ）
IRF630NL
元器件型号： IRF630NL
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.30ohm ，ID = 9.3A ）
PDF文件： 总11页 (文件大小：155K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF630NL参数
 查看货源

IRF630NLPBF

 HEXFET Power MOSFET

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28 IRF

IRF630NPBF

 HEXFET Power MOSFET

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209 IRF

IRF630NPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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1 IRF

IRF630NPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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5 INFINEON

IRF630NPBF_15

 Advanced Process Technology

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0 IRF

IRF630NS

 N-Channel Power MOSFETs 200V, 9.3A, 0.30з

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34 FAIRCHILD

IRF630NS

 HEXFET Power MOSFET

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52 IRF

IRF630NS

 Power MOSFET

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30 TRSYS

IRF630NS

 Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

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145 IRF

IRF630NSL86Z

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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0 FAIRCHILD

IRF630NSPBF

 HEXFET Power MOSFET

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53 IRF

IRF630NSPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRF630NSPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 INFINEON

IRF630NSRPBF

 Advanced Process Technology

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0 IRF

IRF630NSS62Z

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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0 FAIRCHILD
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