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IRF630NPBF_15 [INFINEON]

Advanced Process Technology;

IRF630NPBF_15


型号：	IRF630NPBF_15
厂家：	Infineon
描述：	Advanced Process Technology
文件：	总11页 (文件大小：340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

IRF630NS

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

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147 INFINEON

IRF630NS

N-Channel Power MOSFETs 200V, 9.3A, 0.30з

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37 FAIRCHILD

IRF630NS

Power MOSFET

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36 TRSYS

IRF630NSL86Z

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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1 FAIRCHILD

IRF630NSL99Z

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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0 FAIRCHILD

IRF630NSPBF

HEXFET Power MOSFET

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58 INFINEON

IRF630NSRPBF

Advanced Process Technology

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1 INFINEON

IRF630NSS62Z

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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1 FAIRCHILD

IRF630NSTRL

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB

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65 INFINEON

IRF630NSTRLPBF

暂无描述

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2 INFINEON

IRF630NSTRR

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB

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37 INFINEON

IRF630NSTRRPBF

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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3 INFINEON

IRF630N_04

HEXFET Power MOSFET

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31 INFINEON

IRF630PBF

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )

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76 INFINEON

IRF630PBF

Power MOSFET

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36 VISHAY

IRF630R

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 RENESAS

IRF630S

N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET

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68 STMICROELECTR

IRF630S

N-channel TrenchMOS transistor

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53 NXP

IRF630S

Power MOSFET

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52 TRSYS

IRF630S

Power MOSFET

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20 VISHAY

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