IRF634SPBF [IRF]

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3;
IRF634SPBF
型号: IRF634SPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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IRF634SR

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 FAIRCHILD

IRF634STRL

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 VISHAY

IRF634STRLPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 IRF

IRF634STRLPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF634STRR

暂无描述

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0 IRF

IRF634STRRPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 VISHAY

IRF634STRRPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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0 IRF

IRF635

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 6.5A I(D) | TO-220AB

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66 ETC

IRF635

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRF635-004PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF635-005PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF635-006PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF635PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF636

8.1A, 275V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 ROCHESTER

IRF637

TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB

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41 ETC