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IRF634STRR [INFINEON]

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IRF634STRR
型号: IRF634STRR
厂家: Infineon    Infineon
描述:

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相关型号:

IRF634STRRPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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VISHAY

IRF634STRRPBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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INFINEON

IRF635

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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INFINEON

IRF635-001PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF635-002

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

IRF635-004PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF635-005PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF635-006PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF635-009

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF635-010

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF635-011

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF635-012

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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INFINEON

IRF635-013

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRF635-013PBF

6.8A, 250V, 0.68ohm, N-CHANNEL, Si, POWER, MOSFET

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INFINEON

IRF635PBF

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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INFINEON

IRF636

8.1A, 275V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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ROCHESTER

IRF637

TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB

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ETC

IRF640

18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs

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IRF640

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

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IRF640

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

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STMICROELECTR