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IRF640NL [IRF]

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A); 功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.15ohm ，ID = 18A ）
IRF640NL
元器件型号： IRF640NL
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.15ohm ，ID = 18A ）
PDF文件： 总11页 (文件大小：155K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF640NL参数
 查看货源

IRF640NLPBF

 HEXFET㈢ Power MOSFET

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72 IRF

IRF640NLPBF

 Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

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9 KERSEMI

IRF640NLPBF

 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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4 INFINEON

IRF640NPBF

 Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

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59 KERSEMI

IRF640NPBF

 HEXFET㈢ Power MOSFET

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638 IRF

IRF640NS

 N-Channel Power MOSFETs 200V, 18A, 0.15ohm

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137 FAIRCHILD

IRF640NS

 HEXFET Power MOSFET

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228 IRF

IRF640NS

 Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

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575 IRF

IRF640NSPBF

 HEXFET㈢ Power MOSFET

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150 IRF

IRF640NSPBF

 Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

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24 KERSEMI

IRF640NSTRL

 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3

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5 IRF

IRF640NSTRLPBF

 Advanced Process Technology

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74 IRF

IRF640NSTRLPBF

 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

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17 IRF

IRF640NSTRRPBF

 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

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3 INFINEON

IRF640NSTRRPBF

 Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3

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4 IRF
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