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元器件品牌
IRF640NSPBF
[IRF]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
元器件型号:
IRF640NSPBF
生产厂家:
INTERNATIONAL RECTIFIER
描述和应用:
HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET
PDF文件:
总12页 (文件大小:297K)
下载文档:
下载PDF数据表文档文件
型号参数:IRF640NSPBF参数
查看货源
IRF640NSTRL
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3
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IRF
IRF640NSTRLPBF
Advanced Process Technology
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74
IRF
IRF640NSTRLPBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3
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IRF
IRF640NSTRRPBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3
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3
INFINEON
IRF640NSTRRPBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3
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4
IRF
IRF640PBF
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching
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12
KERSEMI
IRF640PBF
Power MOSFET
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156
VISHAY
IRF640R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-220AB
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79
ETC
IRF640S
N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
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218
STMICROELECTR
IRF640S
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
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186
IRF
IRF640S
N-channel TrenchMOS transistor
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156
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95
PHILIPS
IRF640S
Power MOSFET
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156
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189
VISHAY
IRF640S
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2
MOTOROLA
IRF640S
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
Warning
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11
VISHAY
IRF640SPBF
Power MOSFET
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65
VISHAY
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