IRF6894MTR1PBF [INFINEON]
Power Field-Effect Transistor, 33A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;
| 型号： | IRF6894MTR1PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 33A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97633A
IRF6894MPbF
IRF6894MTRPbF
DirectFET®plus MOSFET with Schottky Diode
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max
0.9mΩ@ 10V 1.4mΩ@ 4.5V
l Dual Sided Cooling Compatible
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Low Package Inductance
26nC
9.8nC 2.8nC
56nC
31nC
1.6V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
ISOMETRIC
MX
MP
l Footprint compatible to DirectFET™
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MX
Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Max.
25
Parameter
Units
V
VDS
Drain-to-Source Voltage
±16
32
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
25
A
@ TA = 70°C
@ TC = 25°C
160
260
410
26
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
4.0
3.0
2.0
1.0
0.0
14.0
12.0
10.0
8.0
I
= 33A
I = 26A
D
D
V
= 20V
= 13V
DS
V
DS
VDS= 5V
T
= 125°C
= 25°C
J
6.0
4.0
T
2.0
J
0.0
2
4
6
8
10 12 14 16 18 20
0
10
20
Q
30
40
50
60
70
80
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.18mH, RG = 50Ω, IAS = 26A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
8/12/11
IRF6894MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 1.0mA
ID = 10mA ( 25°C-125°C)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
0.02
0.9
1.4
1.6
-4.3
–––
–––
–––
–––
26
–––
–––
1.3
1.8
2.1
V
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
–––
1.1
V/°C
V
GS = 10V, ID = 33A
m
Ω
VGS = 4.5V, ID = 26A
VGS(th)
V
V
V
DS = VGS, ID = 100μA
DS = VGS, ID = 10mA
DS = 20V, VGS = 0V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
/ T
GS(th) Δ
Δ
–––
–––
–––
–––
255
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
J
IDSS
IGSS
500
100
-100
–––
39
μA
VGS = 16V
nA
V
V
GS = -16V
DS =13V, ID =26A
gfs
Qg
S
V
V
DS = 13V
GS = 4.5V
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
6.6
2.8
9.8
6.8
12.6
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs2
Qgd
nC
ID = 26A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
See Fig.15
Qsw
VDS = 16V, VGS = 0V
Qoss
RG
nC
Gate Resistance
0.3
16
Ω
VDD = 13V, VGS = 4.5V
ID = 26A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
42
RG= 1.8Ω
Turn-Off Delay Time
20
ns
See Fig.17
VGS = 0V
Fall Time
14
Ciss
Coss
Crss
Input Capacitance
––– 4160 –––
––– 1310 –––
VDS = 13V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
290
–––
Diode Characteristics
Conditions
MOSFET symbol
showing the
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
D
S
–––
–––
–––
–––
33
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode)
260
p-n junction diode.
TJ = 25°C, IS = 26A, VGS = 0V
TJ = 25°C, IF =26A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
28
0.75
42
V
ns
nC
Qrr
di/dt = 340A/μs
56
84
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
www.irf.com
IRF6894MTRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
2.1
Power Dissipation
Power Dissipation
Power Dissipation
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
P
J
1.3
54
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
2.3
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
IRF6894MTRPbF
1000
1000
100
10
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.5V
2.5V
1
BOTTOM
BOTTOM
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
≤
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= 33A
V
V
= 10V
D
GS
GS
= 4.5V
T = 150°C
J
100
10
1
T = 25°C
J
T = -40°C
J
V
= 15V
DS
≤
60μs PULSE WIDTH
0.1
1.5
2.0
2.5 3.0
3.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
5.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
Vgs = 3.5V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 15V
J
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
4.0
3.0
2.0
1.0
0.0
= C + C
ds
gd
C
iss
C
oss
C
rss
100
0
25 50 75 100 125 150 175 200
, Drain Current (A)
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I
D
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
4
www.irf.com
IRF6894MTRPbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
10msec
1msec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
DC
T
= 25°C
A
0.1
Tj = 150°C
V
= 0V
Single Pulse
GS
0.01
1
0.01
0.1
1
10
100
0.1
0.4
0.7
1.0
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
180
160
140
120
100
80
I
= 10mA
D
60
40
20
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T , Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
1600
I
D
TOP
1.9A
2.7A
1200
800
400
0
BOTTOM 26A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6894MTRPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6894MTRPbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
®
DirectFET plus Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET®plus .
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
www.irf.com
7
IRF6894MTRPbF
®
DirectFET plus Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET®plus. This
includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MIN
CODE MIN
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.023
0.003
0.007
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.021
0.001
0.003
A
B
C
D
E
F
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
G
H
J
K
L
0.88 1.01
2.28
2.41
M
R
P
0.595
0.080
0.17
0.535
0.020
0.08
®
DirectFET plus Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
8
www.irf.com
IRF6894MTRPbF
®
DirectFET plus Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6894MTRPBF). For 1000 parts on 7"
reel, order IRF6894MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
METRIC IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MAX
N.C
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
A
B
C
D
E
F
G
H
0.063
1.60
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2011
www.irf.com
9
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