概述
数据手册IRF7703GPBF 概述
HEXFETPower MOSFET Ultra Low On-Resistance ?? HEXFET功率MOSFET超低导通电阻
IRF7703GPBF 数据手册
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IRF7703GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
VDSS
-40V
RDS(on) max (mW)
28@VGS = -10V
ID
-6.0A
45@VGS = -4.5V
-4.8A
l Halogen-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-40
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-6.0
-4.7
A
-24
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
1.5
W
0.96
Linear Derating Factor
0.012
± 20
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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1
05/15/09
IRF7703GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-40 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.030 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
––– –––
28
45
VGS = -10V, ID = -6.0A
VGS = -4.5V, ID = -4.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -6.0A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
-1.0 ––– -3.0
10 ––– –––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 20V
Qg
––– 41
––– 16
––– 16
62
25
24
ID = -6.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -20V
VGS = -4.5V
––– 43 –––
––– 405 –––
––– 155 –––
––– 77 –––
––– 5220 –––
––– 416 –––
––– 337 –––
VDD = -20V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -25V
ƒ = 1.0kHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
S
IS
MOSFET symbol
showing the
-1.5
-24
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
––– 34
––– 56
51
84
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7703GPbF
10000
1000
100
10
1000
100
10
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
TOP
TOP
BOTTOM -2.7V
BOTTOM -2.7V
1
0.1
1
-2.7V
20µs PULSE WIDTH
-2.7V
0.01
0.001
20µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
-6.0A
=
I
D
°
T = 150 C
J
1.5
1.0
0.5
0.0
10
1
°
T = 25 C
J
0.1
V
= -15V
DS
20µs PULSE WIDTH
V
=-10V
GS
0.01
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
2.5
3.0
3.5
4.0 4.5
5.0
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7703GPbF
100000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
I =
D
-6.0
GS
-
V
V
= 32V
= C + C
,
C
SHORTED
DS
DS
iss
gs
gd
ds
-
= 20V
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
Crss
10
4
0
1
100
0
30
60
90
120
150
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
100µsec
1msec
10
1
°
T = 25 C
J
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7703GPbF
6.0
4.8
3.6
2.4
1.2
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
t
SINGLE PULSE
1
(THERMAL RESPONSE)
0.1
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7703GPbF
0.040
0.035
0.030
0.025
0.020
0.015
0.05
V
= -4.5V
GS
0.04
I
= -6.0A
D
0.03
0.02
0.01
V
= -10V
GS
3.0
5.0
7.0
9.0
11.0
13.0
15.0
0
5
10
15
20
25
-V
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7703GPbF
150
130
110
90
3.0
2.5
2.0
1.5
1.0
I
= -250µA
D
70
50
30
10
0.00
0.01
0.10
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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7
IRF7703GPbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7703GPbF
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2009
www.irf.com
9
IRF7703GPBF 相关器件
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| IRF7703TR | INFINEON | Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8 | 获取价格 |
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| IRF7703TRPBF | INFINEON | Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 | 获取价格 |
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| IRF7705PBF | INFINEON | Power Field-Effect Transistor, 8A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 | 获取价格 |
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