Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
IRF9530SPBF
[IRF]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
元器件型号：
IRF9530SPBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET
晶体 晶体管 功率场效应晶体管 开关
PDF文件：
总9页 (文件大小：1005K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF9530SPBF参数
查看货源
IRF9530STRL
暂无描述
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
IRF9530STRLPBF
Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
34
VISHAY
IRF9530STRLPBF
TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
IRF9530STRRPBF
TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
IRF9531
TRANSISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
392
IRF
IRF9531
P-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
201
SAMSUNG
IRF9531
P-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
151
SAMSUNG
IRF9531
Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
IRF9532
TRANSISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
89
IRF
IRF9532
P-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
68
SAMSUNG
IRF9532
P-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
76
SAMSUNG
IRF9532
Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
5
VISHAY
IRF9532
Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
8
SAMSUNG
IRF9533
TRANSISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
67
IRF
IRF9533
P-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
48
SAMSUNG
©2020 ICPDF网
联系我们和版权申明
INTERNATIONAL RECTIFIER 
