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IRF9630S [IRF]

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A); 功率MOSFET （ VDSS = -200V ， RDS（ON） = 0.80ohm ，ID = -6.5A ）
IRF9630S
元器件型号： IRF9630S
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
功率MOSFET （ VDSS = -200V ， RDS（ON） = 0.80ohm ，ID = -6.5A ）

晶体 晶体管 功率场效应晶体管 开关
PDF文件： 总6页 (文件大小：182K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF9630S参数
 查看货源

IRF9630SPBF

 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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1 IRF

IRF9630STRL

 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IRF

IRF9630STRLPBF

 TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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1 VISHAY

IRF9630STRR

 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF9630STRR

 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IRF

IRF9631

 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-220AB

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68 ETC

IRF9631

 P-CHANNEL POWER MOSFETS

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49 SAMSUNG

IRF9631

 P-CHANNEL POWER MOSFETS

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30 SAMSUNG

IRF9632

 P-CHANNEL POWER MOSFETS

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12 SAMSUNG

IRF9632

 P-CHANNEL POWER MOSFETS

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39 SAMSUNG

IRF9632

 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3A I(D) | TO-220AB

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46 ETC

IRF9632

 Transistor

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0 VISHAY

IRF9632

 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9633

 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB

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27 ETC

IRF9633

 P-CHANNEL POWER MOSFETS

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42 SAMSUNG
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