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IRF9910PBF [IRF]

HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET

IRF9910PBF


元器件型号：	IRF9910PBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	HEXFET㈢Power MOSFET HEXFET㈢Power MOSFET
PDF文件：	总10页 (文件大小：206K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9910PBF参数

IRF9910PBF_08

Dual SO-8 MOSFET for POL Low Gate Charge

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30 IRF

IRF9910PBF-1

Power Field-Effect Transistor

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0 IRF

IRF9910TRPBF

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

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0 INFINEON

IRF9910TRPBF-1

Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

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1 INFINEON

IRF9952

Power MOSFET(Vdss=+-30V)

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357 IRF

IRF9952

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,

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5 INFINEON

IRF9952PBF

HEXFET Power MOSFET

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52 IRF

IRF9952PBF

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

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0 INFINEON

IRF9952QPBF

HEXFET Power MOSFET

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45 IRF

IRF9952QPBF_10

HEXFETPOWERMOSFET

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16 IRF

IRF9952QTRPBF

Advanced Process Technology

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9 IRF

IRF9952TR

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9952TRPBF

Generation V Technology

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28 IRF

IRF9952TRPBF

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

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1 INFINEON

IRF9953

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

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283 IRF

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