IRFH7107PBF [INFINEON]
Secondary Side Synchronous Rectification;
| 型号： | IRFH7107PBF |
| 厂家： | 
Infineon |
| 描述： | Secondary Side Synchronous Rectification |
| 文件： | 总9页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH7107PbF
HEXFET® Power MOSFET
VDS
75
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
8.5
m
Ω
48
nC
RG (typical)
0.6
Ω
ID
75
A
PQFN 5X6 mm
(@Tc(Bottom) = 25°C)
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
FeaturesandBenefits
Features
Benefits
Low RDSon (< 8.5mΩ)
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH7107TRPBF
IRFH7107TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
EOL notice #259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
75
Units
VDS
V
VGS
± 20
14
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
11
75
A
47
300
3.6
104
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
Power Dissipation
Linear Derating Factor
0.029
-55 to + 150
W/°C
°C
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through ꢀ are on page 9
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IRFH7107PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75
–––
–––
V
VGS = 0V, ID = 250uA
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
–––
–––
2.0
0.09 ––– V/°C Reference to 25°C, ID = 1.0mA
6.9
–––
-8.7
–––
–––
–––
8.5
4.0
VGS = 10V, ID = 45A
m
Ω
V
VDS = VGS, ID = 100μA
ΔVGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
68
––– mV/°C
20
μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
VGS = -20V
gfs
Qg
–––
48
10
4.0
15
19
19
19
–––
72
S
VDS = 25V, ID = 45A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
VDS = 38V
V
GS = 10V
nC
ID = 45A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
nC
V
V
DS = 16V, VGS = 0V
DD = 38V, VGS = 10V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
0.6
9.1
12
–––
–––
–––
–––
–––
Ω
ID = 45A
R =1.8
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
20
Ω
G
6.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 3110 –––
VGS = 0V
–––
–––
365
165
–––
–––
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
106
45
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
Continuous Source Current
MOSFET symbol
–––
–––
–––
–––
75
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
300
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
28
1.3
42
V
TJ = 25°C, IS = 45A, VGS = 0V
ns TJ = 25°C, IF = 45A, VDD = 38V
di/dt = 500A/μs
Qrr
ton
160
240
nC
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.2
30
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
°C/W
Rθ
35
JA
RθJA (<10s)
22
2
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IRFH7107PbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
4.0V
VGS
15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
4.0V
TOP
TOP
BOTTOM
BOTTOM
1
4.0V
0.1
0.01
4.0V
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
= 45A
D
V
= 10V
GS
100
T
= 150°C
J
T
= 25°C
J
10
V
= 25V
DS
≤
60μs PULSE WIDTH
1.0
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 45A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
10.0
8.0
= C
V
V
= 60V
= 38V
rss
oss
gd
= C + C
DS
DS
ds
gd
VDS= 15V
10000
1000
100
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
70
V
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
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IRFH7107PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
T
= 150°C
J
10msec
DC
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
GS
= 0V
1
1.0
0
1
10
100
1000
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
80
70
60
50
40
30
20
10
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
I
I
I
I
= 100μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH7107PbF
20
18
16
14
12
10
8
500
400
300
200
100
0
I
= 45A
I
D
D
TOP
5.9A
12A
BOTTOM 45A
T = 125°C
J
T
= 25°C
J
6
4
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRFH7107PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH7107PbF
PQFN 5x6 Outline "E" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRFH7107PbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimens ion des ign to accommodate the component width
Dimens ion des ign to accommodate the component lenght
Bo
Ko
Dimens ion des ign to accommodate the component thicknes s
Overall width of the carrier tape
W
P
1
Pitch between s ucces s ive cavi ty centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH7107PbF
Qualification information†
Industrial††
(per JEDE C JES D47F ††† guidelines )
MS L1
(per JEDE C J-S TD-020D†††
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.11mH, RG = 50Ω, IAS = 45A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
Comment
•
•
•
1/20/2014
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated data sheet with the new IR corporate template.
Updated package outline for “option E” and added package outline for “option G” on page 7.
6/2/2015
• Updated "IFX" logo on page 1 & 9.
•
Updated tape and reel on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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