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IRFI1010NPBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRFI1010NPBF
型号: IRFI1010NPBF
厂家: Infineon    Infineon
描述:

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

文件: 总9页 (文件大小:230K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRFI1310G

Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

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38 INFINEON

IRFI1310G-002

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 INFINEON

IRFI1310G-002PBF

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-003

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-005PBF

21A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-006

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-006PBF

21A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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2 INFINEON

IRFI1310G-009

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-009PBF

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-010

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-012PBF

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-015PBF

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-017PBF

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-018

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 INFINEON

IRFI1310G-018PBF

21A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-019

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-019PBF

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 INFINEON

IRFI1310G-024PBF

21A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1310G-030

Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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3 INFINEON

IRFI1310G-030PBF

21A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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1 INFINEON