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IRFI1010N [IRF]

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.012ohm ，ID = 49A ）
IRFI1010N
元器件型号： IRFI1010N
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.012ohm ，ID = 49A ）

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件： 总8页 (文件大小：110K)
下载文档：  下载PDF数据表文档文件
型号参数：IRFI1010N参数
 查看货源

IRFI1010N-005PBF

 Power Field-Effect Transistor, 44A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1010N-011PBF

 Power Field-Effect Transistor, 44A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1010N-015PBF

 Power Field-Effect Transistor, 44A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1010N-017PBF

 Power Field-Effect Transistor, 44A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1010N-019

 Power Field-Effect Transistor, 44A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1010N-024PBF

 Power Field-Effect Transistor, 44A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI1010N-110PBF

 Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFI1010NPBF

 HEXFET㈢ Power MOSFET

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23 IRF

IRFI1310G

 Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

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37 IRF

IRFI1310G-009

 Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI1310G-009PBF

 Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI1310G-010

 Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI1310G-012PBF

 Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI1310G-015PBF

 Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI1310G-017PBF

 Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF
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