IRFP360LCPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRFP360LCPBF


型号：	IRFP360LCPBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：348K)
下载：	下载PDF数据表文档文件

IRFP360PBF

HEXFET㈢ Power MOSFET

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138 IRF

IRFP360PBF

Power MOSFET

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92 VISHAY

IRFP362

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247

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41 ETC

IRFP3703

Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A)

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442 IRF

IRFP3703PBF

HEXFET Power MOSFET

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90 IRF

IRFP3710

Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)

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759 IRF

IRFP3710HR

Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN

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1 IRF

IRFP3710PBF

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025ヘ , ID = 57A )

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104 IRF

IRFP4004PBF

IRFP4004PBF

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318 IRF

IRFP4110PBF

HEXFET Power MOSFET

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696 IRF

IRFP4127PBF

Power Field-Effect Transistor

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0 IRF

IRFP4127PBF

Power Field-Effect Transistor,

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2 INFINEON

IRFP4137PBF

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

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94 IRF

IRFP420

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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1 SAMSUNG

IRFP421

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 SAMSUNG

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