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IRFR212PBF [IRF]

Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,;

IRFR212PBF


元器件型号：	IRFR212PBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, 脉冲晶体管
PDF文件：	总1页 (文件大小：54K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR212PBF参数

IRFR214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

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85 INTERSIL

IRFR214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

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85 IRF

IRFR214

Power MOSFET

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15 KERSEMI

IRFR214

Power MOSFET

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73 VISHAY

IRFR214_17

Power MOSFET

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0 VISHAY

IRFR214A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA

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107 ETC

IRFR214B

250V N-Channel MOSFET

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67 FAIRCHILD

IRFR214BTM_FP001

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

IRFR214PBF

Power MOSFET

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22 VISHAY

IRFR214PBF

HEXFET㈢ Power MOSFET

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43 IRF

IRFR214PBF

Power MOSFET

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9 KERSEMI

IRFR214TR

Power MOSFET

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21 VISHAY

IRFR214TRA

Power MOSFET

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8 KERSEMI

IRFR214TRL

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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0 IRF

IRFR214TRLPBF

Power MOSFET

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22 VISHAY

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