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元器件品牌
IRFSL9N60A
[IRF]
SMPS MOSFET; 开关电源MOSFET
元器件型号：
IRFSL9N60A
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
SMPS MOSFET
开关电源MOSFET
晶体 开关 晶体管 脉冲
PDF文件：
总8页 (文件大小：124K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFSL9N60A参数
查看货源
IRFSL9N60APBF
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
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VISHAY
IRFSL9N60APBF
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
Warning
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0
IRF
IRFSL9N60ATRL
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
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0
IRF
IRFSL9N60ATRLPBF
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Warning
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156
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0
VISHAY
IRFSL9N60ATRLPBF
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Warning
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156
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0
IRF
IRFSL9N60ATRR
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Warning
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156
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0
VISHAY
IRFSL9N60ATRR
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Warning
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156
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0
IRF
IRFSZ14A
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-220AB
Warning
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20
ETC
IRFSZ20
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 13A I(D) | SOT-186
Warning
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28
ETC
IRFSZ22
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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156
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0
SAMSUNG
IRFSZ22
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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156
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0
SAMSUNG
IRFSZ24
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 13A I(D) | SOT-186
Warning
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156
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58
ETC
IRFSZ24
Power Field-Effect Transistor, 13A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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0
SAMSUNG
IRFSZ24A
Power Field-Effect Transistor, 14A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Warning
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156
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0
FAIRCHILD
IRFSZ25
Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Warning
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0
SAMSUNG
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