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IRFY430ME [IRF]

暂无描述;

IRFY430ME


元器件型号：	IRFY430ME
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	暂无描述
PDF文件：	总7页 (文件大小：172K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFY430ME参数

IRFY430MEBPBF

Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY430MEDPBF

Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY430MEPBF

暂无描述

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0 IRF

IRFY430M-T257

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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9 SEME-LAB

IRFY440

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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28 SEME-LAB

IRFY440C

N-Channel

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13 ETC

IRFY440C

N-Channel MOSFET in a Hermetically sealed

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10 SEME-LAB

IRFY440CM

POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)

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56 IRF

IRFY440CMPBF

Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

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0 IRF

IRFY440CMSCS

Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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0 IRF

IRFY440CMSCX

Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

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0 IRF

IRFY440M

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.5A I(D) | TO-220

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36 ETC

IRFY440-T257

N-CHANNEL POWER MOSFET

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7 SEME-LAB

IRFY540

N-Channel MOSFET in a Hermetically sealed

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7 SEME-LAB

IRFY540

N-Channel

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22 ETC

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