IRFY430M-T257 [SEME-LAB]
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS; N沟道功率MOSFET用于HI- REL应用
| 型号： | IRFY430M-T257 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFY430M-T257
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
FOR HI–REL
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.67 (0.420)
0.89 (0.035)
1.14 (0.045)
APPLICATIONS
3.56 (0.140)
3.81 (0.150)
Dia.
VDSS
500V
4.5A
1.65
1 2 3
ID(cont)
RDS(on)
FEATURES
0.64 (0.025)
0.89 (0.035)
• HERMETICALLY SEALED TO257 METAL
PACKAGE
Dia.
2.54 (0.100)
BSC
3.05 (0.120)
BSC
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
TO257AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
±20V
4.5A
GS
I
I
I
(V = 10V , T
= 25°C)
D
GS
case
(V = 10V , T
= 100°C)
2.8A
D
GS
case
1
Pulsed Drain Current
18A
DM
P
Power Dissipation @ T = 25°C
case
75W
D
Linear Derating Factor
0.6W/°C
–55 to 150°C
300°C
T , T
Operating and Storage Temperature Range
J
stg
T
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
L
R
1.67°C/W max.
JC
Notes
1) Pulse Test: Pulse Width 300ms,
2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 1/00
IRFY430M-T257
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
amb
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
BV
V
= 0
I = 1mA
500
V
DSS
GS
D
BV
Reference to 25°C
I = 1mA
DSS
0.78
V/°C
T
J
D
Static Drain – Source On–State
V
V
V
V
V
= 10V
= 10V
I = 2.4A
1.65
1.84
GS
GS
DS
DS
GS
D
R
DS(on)
1
Resistance
I = 3.7A
D
V
Gate Threshold Voltage
= V
I = 250 A
2
4
V
GS(th)
GS
D
( )
1
g
Forward Transconductance
15V
= 0
I
= 2.4A
1.5
S(
fs
DS
V
= 0.8BV
25
250
100
–100
DS
DSS
I
Zero Gate Voltage Drain Current
A
DSS
T = 125°C
J
I
I
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
V
V
= 20V
GSS
GS
nA
= –20V
GSS
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
V
V
= 0
610
135
65
iss
GS
DS
Output Capacitance
= 25V
pF
oss
rss
Reverse Transfer Capacitance
f = 1MHz
V
V
V
V
V
= 10V
I =3.7A
D
GS
DS
GS
DS
DD
1
Q
Total Gate Charge
19.8
29.5
nC
nC
g
= 0.5BV
= 10V
DSS
DSS
1
Q
Q
Gate – Source Charge
I = 3.7A
2.2
5.5
4.6
19.7
35
gs
D
1
Gate – Drain (“Miller”) Charge
= 0.5BV
= 250V
gd
t
t
t
t
Turn–On Delay Time
Rise Time
d(on)
r
I =3.7A
30
D
ns
Turn–Off Delay Time
Fall Time
R = 7.5
55
d(off)
f
G
V
= 10V
30
GS
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
Continuous Source Current
3.7
14
S
A
V
2
Pulse Source Current
SM
I = 3.7A
T = 25°C
C
S
V
Diode Forward Voltage
1.4
SD
V
= 0
GS
t
Reverse Recovery Time
I = 3.7A
T = 25°C
900
7.0
ns
C
rr
S
J
Q
Reverse Recovery Charge
Forward Turn–On Time
d / d 100A/ s V
DD
50V
rr
i
t
t
Negligible
on
PACKAGE CHARACTERISTICS
L
L
Internal Drain Inductance (6mm down drain lead to centre of die)
Internal Source Inductance (6mm down source lead to centre of source bond pad)
8.7
8.7
D
nH
S
Notes
1) Pulse Test: Pulse Width 300ms,
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 1/00
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
相关型号：
IRFY430MEBPBF
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
INFINEON
IRFY430MEDPBF
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
INFINEON
IRFY440CMPBF
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3
INFINEON
IRFY440CMSCS
Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
INFINEON
IRFY440CMSCX
Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
INFINEON
IRFY440CSCX
Power Field-Effect Transistor, 5.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
INFINEON
©2020 ICPDF网 联系我们和版权申明