IRFZ44VZSTRRPBF [IRF]

Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
IRFZ44VZSTRRPBF
型号: IRFZ44VZSTRRPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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文件: 总12页 (文件大小:369K)
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IRFZ44Z

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

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203 IRF

IRFZ44ZL

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

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34 IRF

IRFZ44ZLPBF

HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A )

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25 IRF

IRFZ44ZLPBF

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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0 INFINEON

IRFZ44ZPBF

HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A )

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28 IRF

IRFZ44ZPBF

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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0 INFINEON

IRFZ44ZS

Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

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51 IRF

IRFZ44ZSPBF

HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 13.9mヘ , ID = 51A )

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21 IRF

IRFZ44ZSTRLPBF

暂无描述

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1 IRF

IRFZ44ZSTRR

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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0 IRF

IRFZ44ZSTRRPBF

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 INFINEON

IRFZ45

N-CHANNEL POWER MOSFETS

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127 SAMSUNG

IRFZ45-001

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRFZ45-002PBF

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRFZ45-003

Power Field-Effect Transistor, 50A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF